公开(公告)号：WO03005415A2

公开(公告)日：2003-01-16

申请号：PCT/US0221140

申请日：2002-07-03

Applicant: SILICON POWER CORP

Inventor： TEMPLE VICTOR ,  HOLROYD FORREST ,  AL-MARAYATI SABIH ,  PATTANAYAK DEVA

IPC: H01L23/48 ,  H01L29/08 ,  H01L29/744 ,  H01L

CPC classification number: H01L29/744 ,  H01L24/72 ,  H01L29/0834 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A gate turn-off thyristor (GTO) device has a lower portion, an upper portion and a lid. The lower portion has a lower base region of a first conductivity type, and a lower emitter region of a second conductivity type disposed at or from a lower surface of the lower base region. A lower junction is formed between the lower base region and the lower emitter region. The upper portion has an upper base region of the second conductivity type, and upper emitter regions of the first conductivity type disposed at or from an upper surface of the upper base region. An upper-lower junction is formed between the lower base region and the upper base region, and upper junctions are formed between the upper base region and the upper emitter regions. The upper base region and upper emitter regions form an upper base surface with first conductive contacts to the upper base region alternating with second conductive contacts to the upper emitter regions. The lid has a layer of insulator with upper and lower surfaces. Upper metal stripes extend along the upper surface of the insulator, and lower metal stripes extend along the lower surface of the insulator. The upper and lower metal stripes are connected together by vias that extend through the insulator. One set of the lower metal stripes contacts the first conductive contacts, but not the second conductive contacts. Another set of the lower metal stripes contacts the second conductive contacts, but not the first conductive contacts.

Abstract translation: 栅极截止晶闸管（GTO）器件具有下部，上部和盖。 下部具有第一导电类型的下基极区域和布置在下基极区域的下表面处的第二导电类型的下发射极区域。 在下基极区域和下部发射极区域之间形成下部结。 上部具有第二导电类型的上部基极区域，并且第一导电类型的上部发射极区域设置在上部基极区域的上表面或从上部基极区域的上表面。 在下基部区域和上基极区域之间形成上下接合部，并且在上部基极区域和上部发射极区域之间形成上部接合部。 上部基极区域和上部发射极区域形成上部基底表面，其中上部基极区域的第一导电触点与第二导电触点与上部发射极区域交替。 盖子具有一层具有上表面和下表面的绝缘体。 上金属条沿着绝缘体的上表面延伸，下金属条沿着绝缘体的下表面延伸。 上下金属条通过穿过绝缘体的通孔连接在一起。 一组下金属条接触第一导电触点，但不与第二导电触点接触。 另一组下部金属条接触第二导电触点，而不是第一导电触头。

公开(公告)号：WO0227910A3

公开(公告)日：2002-07-04

申请号：PCT/US0142345

申请日：2001-09-28

Applicant: SILICON POWER CORP

Inventor： KRAMER WILLIAM O ,  DANESHPOOY ALIREZA

IPC: H01F29/02 ,  H02J3/18 ,  H02P13/06 ,  G05F1/34 ,  G05F1/14

CPC classification number: H02P13/06 ,  H01F29/02

Abstract: A voltage regulator (100) apparatus comprises a transformer having a primary winding (102) and a secondary winding (104), a plurality of further windings selectively connected to one of the primary winding and a secondary winding, and a plurality of solid state selectors respectively coupled to each of the plurality of further windings to one of: (i) connect the further winding in series with the primary winding of the secondary winding and (ii) bypass the further winding.

Abstract translation: 电压调节器（100）装置包括具有初级绕组（102）和次级绕组（104）的变压器，选择性地连接到初级绕组和次级绕组中的一个的多个另外的绕组，以及多个固态选择器 分别耦合到所述多个另外的绕组中的每一个以进行以下之一：（i）将所述另外的绕组与所述次级绕组的所述初级绕组串联并且（ii）绕过所述另外的绕组。