公开(公告)号：WO2010062644A2

公开(公告)日：2010-06-03

申请号：PCT/US2009/062356

申请日：2009-10-28

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  WANG, Deli ,  SOCI, Cesare ,  BAO, Xinyu ,  WEI, Wei ,  JING, Yi ,  SUN, Ke

Inventor： WANG, Deli ,  SOCI, Cesare ,  BAO, Xinyu ,  WEI, Wei ,  JING, Yi ,  SUN, Ke

IPC: H01L21/20 ,  B82B3/00

CPC classification number: H01L21/0262 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02636 ,  H01L27/0605 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/20 ,  H01L29/205 ,  H01L29/267 ,  H01L29/7784 ,  H01L29/88 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/074 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  Y02E10/50 ,  Y10S438/938 ,  Y10S438/967 ,  Y10S438/974 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/765 ,  Y10S977/813 ,  Y10S977/815 ,  Y10S977/819 ,  Y10S977/825

Abstract: Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

Abstract translation: 本发明的实施例提供了一种用于在硅衬底上直接异质外延生长垂直III-V半导体纳米线的方法。 蚀刻硅衬底以基本上完​​全去除自然氧化物。 它被迅速放入反应室。 衬底被加热并保持在生长温度。 III-V族前体流动一段时间。 硅上的优选实施例垂直III-V族纳米线具有提供径向同质结或异质结的核 - 壳结构。 掺杂的纳米线核心被具有互补掺杂的壳体包围。 由于垂直纳米线的轴向方向上的长光路，这可以提供高光吸收，同时显着减小载流子在沿径向方向收集之前必须扩散的距离。 合金成分也可以变化。 可以实现径向和轴向同质结和异质结。 实施例提供柔性的III-V族纳米线结构。 一组III-V纳米线结构嵌入聚合物中。 制造方法在衬底（例如硅衬底）上形成垂直纳米线。 优选地，纳米线由用于在硅上制造III-V族纳米线的优选方法形成。 器件可以由核/壳和核/多壳纳米线形成，并且器件从其上形成纳米线的衬底释放，以创建包括嵌入聚合物中的垂直纳米线阵列的柔性结构。

公开(公告)号：WO2008143727A3

公开(公告)日：2008-11-27

申请号：PCT/US2008/002529

申请日：2008-02-26

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  WANG, Deli ,  SOCI, Cesare ,  LO, Yu-hwa ,  ZHANG, Arthur ,  APLIN, David ,  WANG, Lingquan ,  DAYEH, Shadi ,  BAO, Xin, Yu

Inventor： WANG, Deli ,  SOCI, Cesare ,  LO, Yu-hwa ,  ZHANG, Arthur ,  APLIN, David ,  WANG, Lingquan ,  DAYEH, Shadi ,  BAO, Xin, Yu

IPC: H01L27/146

Abstract: A practical ID nanowire photodetector with high gain that can be controlled by a radial electric field established in the ID nanowire. A ID nanowire photodetector device of the invention includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to the nanowire inhibits photo-carrier recombination, thus enhancing the photocurrent response. The invention further provides circuits of ID nanowire photodetctors, with groups of photodetctors addressed by their individual ID nanowires electrode contacts. The invention also provides a method for placement of ID nanostructures, including nanowires, with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of ID nanostructures. The ID nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the ID nanostructures in predetermined, registered positions on the substrate.

公开(公告)号：WO2008143727A2

公开(公告)日：2008-11-27

申请号：PCT/US2008002529

申请日：2008-02-26

Applicant: UNIV CALIFORNIA ,  WANG DELI ,  SOCI CESARE ,  LO YU-HWA ,  ZHANG ARTHUR ,  APLIN DAVID ,  WANG LINGQUAN ,  DAYEH SHADI ,  BAO XIN YU

Inventor： WANG DELI ,  SOCI CESARE ,  LO YU-HWA ,  ZHANG ARTHUR ,  APLIN DAVID ,  WANG LINGQUAN ,  DAYEH SHADI ,  BAO XIN YU

IPC: H01L27/146

CPC classification number: H01L31/035227 ,  B82Y20/00 ,  H01L27/14643 ,  H01L31/035236

Abstract: A practical ID nanowire photodetector with high gain that can be controlled by a radial electric field established in the ID nanowire. A ID nanowire photodetector device of the invention includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to the nanowire inhibits photo-carrier recombination, thus enhancing the photocurrent response. The invention further provides circuits of ID nanowire photodetctors, with groups of photodetctors addressed by their individual ID nanowires electrode contacts. The invention also provides a method for placement of ID nanostructures, including nanowires, with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of ID nanostructures. The ID nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the ID nanostructures in predetermined, registered positions on the substrate.

Abstract translation: 具有高增益的实用的ID纳米线光电探测器，其可以通过在ID纳米线中建立的径向电场来控制。 本发明的ID纳米线光电探测器器件包括一个纳米线，该纳米线被电极单独接触，用于施加驱动光电流的纵向电场。 对纳米线的固有径向电场抑制光载流子复合，从而增强光电流响应。 本发明还提供了ID纳米线光电子器件的电路，其具有由它们的各自的ID纳米线电极接触器寻址的光电子束组。 本发明还提供了一种用于将ID纳米结构（包括纳米线）放置在衬底上的方法。 用诸如光致抗蚀剂的材料对衬底进行图案化，并且在图案化材料中在预定位置形成沟槽以放置ID纳米结构。 将ID纳米结构在液体悬浮液中排列，然后从液体悬浮液转移到沟槽中。 去除图案形成材料将ID纳米结构放置在基板上的预定的注册位置。

公开(公告)号：WO2010062644A3

公开(公告)日：2010-07-22

申请号：PCT/US2009062356

申请日：2009-10-28

Applicant: UNIV CALIFORNIA ,  WANG DELI ,  SOCI CESARE ,  BAO XINYU ,  WEI WEI ,  JING YI ,  SUN KE

Inventor： WANG DELI ,  SOCI CESARE ,  BAO XINYU ,  WEI WEI ,  JING YI ,  SUN KE

IPC: H01L21/20 ,  B82B3/00

CPC classification number: H01L21/0262 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02636 ,  H01L27/0605 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/20 ,  H01L29/205 ,  H01L29/267 ,  H01L29/7784 ,  H01L29/88 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/074 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  Y02E10/50 ,  Y10S438/938 ,  Y10S438/967 ,  Y10S438/974 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/765 ,  Y10S977/813 ,  Y10S977/815 ,  Y10S977/819 ,  Y10S977/825

Abstract: Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

Abstract translation: 本发明的实施例提供了一种在硅衬底上直接异质外延生长垂直III-V半导体纳米线的方法。 蚀刻硅衬底以基本上完​​全去除天然氧化物。 将其迅速置于反应室中。 将基底加热并保持在生长温度。 III-V族前体流过生长时间。 优选的实施例中，硅上的垂直III-V族III族纳米线具有核 - 壳结构，其提供径向同态结或异质结。 掺杂的纳米线芯由具有互补掺杂的壳包围。 这样可以由于在垂直的纳米线的轴向方向上的长的光路而提供高的光学吸收，同时在径向方向收集载体之前要大大减小载体必须扩散的距离。 合金成分也可以变化。 可以实现径向和轴向同态和异质结。 实施例提供柔性III-V族纳米线结构。 III-V族纳米线结构阵列嵌入聚合物中。 制造方法在衬底（例如，硅衬底）上形成垂直的纳米线。 优选地，通过在硅上制造III-V族III族纳米线的优选方法形成纳米线。 器件可以用核/壳和核/多壳纳米线形成，并且器件从其上形成纳米线的衬底释放以产生包括嵌入聚合物中的垂直纳米线阵列的柔性结构。