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公开(公告)号：WO2007036455A3
公开(公告)日：2007-06-28
申请号：PCT/EP2006066481
申请日：2006-09-19
发明人： MITLEHNER HEINZ , STEPHANI DIETRICH
IPC分类号： H01L29/872 , H01L29/06 , H01L29/08 , H01L29/36
CPC分类号： H01L29/8611 , H01L29/0847 , H01L29/0891 , H01L29/1608 , H01L29/872
摘要： The invention relates to a vertical integrated JBS-SiC semiconductor component, in particular to a power semiconductor component, comprising a high-doped SiC semiconductor body of a first conductivity type, a low-doped drift area of the first conductivity type, which is located on said semiconductor body on a transmitter side and which is at least partially adjacent to a first surface, at least one emitter area of a second conductivity type, which is integrated into the drift area on the first surface side and is adjacent thereto, an intermediate layer of the first conductivity type which is arranged in the drift area, at a distance from the emitter areas, laterally crosses the entire drift area and whose dopant concentration is greater than that of the drift area.
摘要翻译： 本发明涉及集成的垂直JBS-SiC半导体装置的JBS-SiC半导体器件，在设置有第一导电类型与所述第一导电类型的低掺杂漂移区，其被设置在发射极侧与半导体本体和高掺杂的SiC半导体基体特定的功率半导体器件 至少部分地在邻近具有被嵌入在所述第一表面侧进入漂移区和邻近于所述第一表面的第二导电型，其被布置成与从所述发射极区和侧面由隔开漂移区域内部的至少一个发射极区上的第一表面区域 其具有相对于所述漂移区高的掺杂浓度的第一导电类型的整个漂移区连续中间层。
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2.发明申请
公开(公告)号：WO1996017113A1
公开(公告)日：1996-06-06
申请号：PCT/DE1995001576
申请日：1995-11-14
IPC分类号： C30B23/00
摘要： A reaction chamber (2) is surrounded by a gas-tight wall (20) of which at least the inner side (21) that faces the reaction chamber (2) is made of silicon carbide produced by a CVD process. At least part of the silicon carbide that constitutes the wall (20) is sublimated and grown as a silicon carbide monocrystal (4) on a crystal seed (3).
摘要翻译： 的反应室（2）由至少一个气密壁（20）封闭在所述反应室（2）的面向通过CVD工艺碳化硅所产生的内部（21）。 至少所述壁（20）的碳化硅的一部分上生长升华晶种和（3）作为碳化硅单晶（4）。
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公开(公告)号：WO1989001685A1
公开(公告)日：1989-02-23
申请号：PCT/EP1988000142
申请日：1988-02-26
申请人： SIEMENS AKTIENGESELLSCHAFT , HOENIG, Eckhardt , DIEPERS, Heinrich , SCHEWE, Herbert , STEPHANI, Dietrich
IPC分类号： G11B05/596
CPC分类号： G11B5/3945 , G11B5/3903 , G11B5/4886 , G11B5/59683
摘要： A magnetic storage device comprises a magnetizable storage disk, a write/read magnetic head arranged on a floating element, and a tracker system. This system comprises a servo head rigidly connected to the magnetic head and maintained on at least one guide track by electronic elements, connected downstream. The storage device is designed to ensure continuous guiding of the magnetic head. For this purpose, guide tracks (9, 10) are inscribed separately on the storage disk (2) along data tracks (40) each of which contains two parallel half-tracks (9a, 9b; 10a, 10b) with antiparallel magnetization directions (13a, 13b). The servo head (20) is arranged on the flat posterior side of the floating element and contains a magnetoresistive sensor (26) which is coupled magnetically to two magnet arms (22, 23) connected to at least one guide track (9, 10).
摘要翻译： 磁存储装置包括可磁化存储盘，布置在浮动元件上的写/读磁头和跟踪器系统。 该系统包括刚性连接到磁头的伺服磁头，并通过电子元件在下游连接至少一个导轨。 存储设备被设计成确保磁头的连续引导。 为此目的，引导轨道（9,10）沿数据轨道（40）分别刻录在存储盘（2）上，每个轨道包含具有反平行磁化方向的两个平行半轨道（9a，9b; 10a，10b） 13a，13b）。 伺服头（20）布置在浮动元件的平坦后侧上并且包含磁阻传感器（26），该磁阻传感器26磁耦合地耦合到连接到至少一个导轨（9,10）的两个磁臂（22,23） 。
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公开(公告)号：WO2007036456A2
公开(公告)日：2007-04-05
申请号：PCT/EP2006066482
申请日：2006-09-19
申请人： SICED ELECT DEV GMBH & CO KG , FRIEDRICHS PETER , PETERS DETHARD , SCHOERNER REINHOLD , STEPHANI DIETRICH
IPC分类号： H01L29/861
CPC分类号： H01L29/861 , H01L29/1608 , H01L29/36
摘要： The invention relates to an integrated vertical SiC-PN power diode comprising a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of said first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of said first conductivity type, said intermediate layer being arranged inside the drift zone, comprising a higher doping concentration than the drift zone, and dividing the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. The invention also relates to a circuit arrangement comprising such SiC-PN power diodes.
摘要翻译： 本发明涉及一种集成纵型SiC PN-功率二极管，与第一导电类型与所述第一导电类型，其被设置在发射极侧与半导体本体，所述第二导电类型的发射极区的低掺杂漂移区的高掺杂形成在SiC半导体基体 漂移区被施加，并且具有更高的掺杂浓度和其将漂移区至少在第一阳极侧漂移区层和至少一个第二阴极侧漂移区域层的至少一个被布置，其具有相对于所述漂移区中的第一导电类型的漂移区域薄的中间层内。 本发明还涉及一种具有这种的SiC-PN功率二极管的电路布置。
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公开(公告)号：WO2005088729A3
公开(公告)日：2005-09-22
申请号：PCT/EP2005/051117
申请日：2005-03-11
IPC分类号： H01L29/861
摘要： Dioden mit Avalanche-Verhalten sind bekannt. Gemäss der Erfin- dung sind insbesondere zur Realisierung einer pn-Diode in ei- ner dünnen Schicht unter der p-Anode (2) gebietsweise Berei- che (12 ik , i=1-m, k=1-n) vorhanden, in denen die Konzentrati- 10 on der n-Dotierung über der Konzentration der n-Dotierung der epitaktischen Schicht (11) liegt. Zur Herstellung eines sol- chen Bauelementes werden Epitaxie- und/oder Implantationsme- thoden angewandt.
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公开(公告)号：WO1997023911A1
公开(公告)日：1997-07-03
申请号：PCT/DE1996002347
申请日：1996-12-06
IPC分类号： H01L29/772
CPC分类号： H01L29/8083 , H01L29/1066 , H01L29/8122
摘要： The semiconductor arrangement comprises a lateral channel region (22) and an adjacent vertical channel region (29) in a first n-conductive semiconductor region. Both channel regions are bounded by the depletion zone (23) of a p-n transition formed between the first semiconductor region (2) and a p-conductive second semiconductor region buried in the first.
摘要翻译： 该半导体器件包括横向沟道区（22），并在n型导电的第一半导体区域的后续垂直沟道区（29）。 两个通道的区域是一个p-n结的耗尽区（23）是有限的，这是第一半导体区域（2）和p型掩埋在第一半导体区之间形成的所述第二半导体区。
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7.发明申请THIN-FILM MAGNETIC HEAD WITH PARTS EMBEDDED IN A SUBSTRATE AND PROCESS FOR OBTAINING IT 审中-公开具有嵌入基板的部件的薄膜磁头和用于获取其的工艺
公开(公告)号：WO1990007176A1
公开(公告)日：1990-06-28
申请号：PCT/EP1989001222
申请日：1989-10-16
IPC分类号： G11B05/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： A thin-film head (2) contains a conductor of magnetic flux similar to an annular head with two magnetic arms (6, 7), which is partially embedded in a depression (12) in a non-magnetic substrate. Each arm (6, 7) has a magnetic layer (6a and 7a, respectively), which forms a magnetic pole (P1 and P2, respectively) at a pole point (8 and 9, respectively), and a magnetic amplification layer (6b and 7b, respectively). This magnetic head should be easy to manufacture and should allow high magnetic flux densities in its conductor. To this end, only the amplification layer (6b) in the magnetic arm (6) facing the substrate (12) is arranged in the depression (12) in the substrate (3) in such a way that its surface (13) lies in the same plane (E) as the surface (14) of the substrate.
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公开(公告)号：WO2007036456A3
公开(公告)日：2007-04-05
申请号：PCT/EP2006/066482
申请日：2006-09-19
申请人： SICED ELECTRONICS DEVELOPMENT GMBH & CO. KG , FRIEDRICHS, Peter , PETERS, Dethard , SCHÖRNER, Reinhold , STEPHANI, Dietrich
IPC分类号： H01L29/06 , H01L29/24 , H01L29/861
摘要： Die Erfindung betrifft eine integrierte vertikale SiC-PN-Leistungsdiode, mit einem hochdotierten ausgebildeten SiC-Halbleiterkörper eines ersten Leitfähigkeitstyps, mit einer niedrig dotierten Driftzone des ersten Leitfähigkeitstyps, die emitterseitig über dem Halbleiterkörper angeordnet ist, mit einer Emitterzone eines zweiten Leitfähigkeitstyps, die auf der Driftzone aufgebracht ist, und mit zumindest einer innerhalb der Driftzone angeordneten dünnen Zwischenschicht des ersten Leitfähigkeitstyps, die eine gegenüber der Driftzone höhere Dotierungskonzentration aufweist und die die Driftzone zumindest in eine erste anodenseitige Driftzonenschicht und zumindest in eine zweite katodenseitige Driftzonenschicht unterteilt. Die Erfindung betrifft ferner eine Schaltungsanordnung mit solchen SiC-PN-Leistungsdioden.
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9.发明申请SEMICONDUCTOR COMPONENT WITH A HIGH BLOCKING CAPABILITY EDGE TERMINATION 审中-公开与HOCHSPERRENDEM EDGINGPROFILE半导体部件
公开(公告)号：WO1996003774A1
公开(公告)日：1996-02-08
申请号：PCT/DE1995000935
申请日：1995-07-14
IPC分类号： H01L29/24
CPC分类号： H01L29/0615 , H01L29/0661 , H01L29/1095 , H01L29/1602 , H01L29/1608 , H01L29/20 , H01L29/22 , H01L29/7811 , H01L29/861 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： An n or p-doped semiconductor region (2) accepts the depletion region (21) of an active section (3) of the semiconductor component with a vertical expansion depending on an applied blocking voltage. The edge termination (4) for the active region (3) takes the form of a semiconductor with the opposite doping to the semiconductor region (2) immediately adjacent to the active region (3) or in a surface (20) of the semiconductor region (2). The lateral expansion (W) of the edge termination (4) is greater than the maximum vertical expansion (T) of the depletion region (21) and the semiconductor region (2) and the edge termination (4) are formed by a semiconductor with a band spacing of at least 2 eV.
摘要翻译： n或p型掺杂的半导体区域（2）发生在半导体器件的有源区（3）与依赖于所施加的反向电压垂直范围的频率下的耗尽区（21）。 为有源区的边缘终止（4）（3）掺杂有相反的（2）半导体形成，并立即（3）上或在半导体区域（2）的一个表面（20）邻近于所述有源区的半导体区。 结终端（4）的横向范围（W）大于耗尽区（21）的最大垂直尺寸（T）大，并且半导体区域（2）和所述边缘终端（4）与具有至少2eV的带隙的半导体 形成。
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公开(公告)号：WO1995024055A1
公开(公告)日：1995-09-08
申请号：PCT/EP1995000679
申请日：1995-02-24
IPC分类号： H01L29/10
CPC分类号： H01L29/7802 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/66068 , H01L29/7396 , H01L29/7397 , H01L29/7813
摘要： The MIS structure contains an n-drift region (1), a base region (3) arranged on one surface of the drift region (1), an ion-implanted n source region (2) in the base region (3), a source electrode (S) short-circuiting the base (3) and source regions (2) and a gate electrode (6) to control the resistance of a channel region (32) of the base region (3) via an insulator region (5). The base region (3) is more highly doped in an ion-implanted p partial region (33) beneath the entire source region (2) than in the channel region (32).
摘要翻译： DIS MIS结构包括n型漂移区（1），一个在所述漂移区的表面（1）设置基极区域（3）到所述基极区域（3）离子注入的n <+> - 源区（2），基极区域（3 ）和源极区（2）短闭源电极（S）和用于在绝缘体上区域控制基极区域（3）的沟道区（32）的电阻的栅电极（6）（5）。 在离子注入的p <+> - 整个源极区下方的部分区域（33）（2）的基极区域（3）的掺杂比在沟道区（32）更高。
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