公开(公告)号：WO2014172159A1

公开(公告)日：2014-10-23

申请号：PCT/US2014/033477

申请日：2014-04-09

Applicant: INTERNATIONAL BUSINESS MACHINE CORPORATION ,  STMICROELECTONICS, INC. ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： CHENG, Kangguo ,  DORIS, Bruce, B. ,  GRENOUILLET, Laurent ,  KHAKIFIROOZ, Ali ,  LE TIEC, Yannick ,  LIU, Qing ,  VINET, Maud

IPC: H01L21/761 ,  H01L29/06

CPC classification number: H01L21/2253 ,  H01L21/761 ,  H01L21/7624 ,  H01L21/76243 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0684 ,  H01L29/66477 ,  H01L29/66772 ,  H01L29/78612 ,  H01L29/78648

Abstract: Methods for semiconductor fabrication include forming (304) a well in a semiconductor substrate. A pocket is formed (306) within the well, the pocket having an opposite doping polarity as the well to provide a p-n junction between the well and the pocket. Defects are created (310) at the p-n junction such that a leakage resistance of the p-n junction is decreased.

Abstract translation: 用于半导体制造的方法包括在半导体衬底中形成阱（304）。 在阱内形成口袋（306），该口袋具有与阱相反的掺杂极性，以在阱和口袋之间提供p-n结。 在p-n结产生缺陷（310），使得p-n结的漏电阻降低。