WAFER LEVEL HERMETIC BOND USING METAL ALLOY
    1.
    发明申请
    WAFER LEVEL HERMETIC BOND USING METAL ALLOY 审中-公开
    使用金属合金的水平涂层粘结

    公开(公告)号:WO2007024730A3

    公开(公告)日:2009-04-16

    申请号:PCT/US2006032431

    申请日:2006-08-21

    Abstract: Systems and methods for forming an encapsulated MEMS device include a hermetic seal which seals an insulating gas between two substrates, one of which supports the MEMS device. The hermetic seal may be formed by heating at least two metal layers, in order to melt at least one of the metal layers. The first melted metal material flows into and forms an alloy with a second metal material, forming a hermetic seal which encapsulates the MEMS device.

    Abstract translation: 用于形成封装的MEMS器件的系统和方法包括密封两个衬底之间的绝缘气体的气密密封件,其中之一支撑MEMS器件。 可以通过加热至少两个金属层来形成气密密封,以便熔化至少一个金属层。 第一熔化的金属材料流入并与第二金属材料形成合金,形成封装MEMS装置的气密密封。

    CONTACT ELECTRODE FOR MICRODEVICES AND ETCH METHOD OF MANUFACTURE
    2.
    发明申请
    CONTACT ELECTRODE FOR MICRODEVICES AND ETCH METHOD OF MANUFACTURE 审中-公开
    MICRODEVICES的接触电极和蚀刻制造方法

    公开(公告)号:WO2008045230A2

    公开(公告)日:2008-04-17

    申请号:PCT/US2007021113

    申请日:2007-10-02

    Abstract: A contact electrode for a device is made using an etching process to etch the surface of the contact electrode to form a corrugated contact surface wherein the outer edges of at least one grain is recessed from the outer edges of adjecent grains and is recessed by at least about 0.05 µm from the contact plane. By having such a corrugated surface, the contact electrode is likely to contact another conductor with at least one pure metal grain. This etching treatment reduces contact resistance and contact resistance variability throughout many cycles of use of the contact electrode.

    Abstract translation: 使用蚀刻工艺来制造用于器件的接触电极以蚀刻接触电极的表面以形成波纹状接触表面,其中至少一个晶粒的外边缘从凹凸晶粒的外边缘凹陷并且至少凹陷 距接触面约0.05μm。 通过具有这种波纹表面,接触电极很可能与另一导体接触至少一个纯金属颗粒。 该蚀刻处理在接触电极的许多使用周期中减少接触电阻和接触电阻变化性。

    WAFER LEVEL HERMETIC BOND USING METAL ALLOY
    8.
    发明申请
    WAFER LEVEL HERMETIC BOND USING METAL ALLOY 审中-公开
    使用金属合金的水平涂层粘结

    公开(公告)号:WO2007024730A2

    公开(公告)日:2007-03-01

    申请号:PCT/US2006/032431

    申请日:2006-08-21

    Abstract: Systems and methods for forming an encapsulated MEMS device include a hermetic seal which seals an insulating gas between two substrates, one of which supports the MEMS device. The hermetic seal may be formed by heating at least two metal layers, in order to melt at least one of the metal layers. The first melted metal material flows into and forms an alloy with a second metal material, forming a hermetic seal which encapsulates the MEMS device.

    Abstract translation: 用于形成封装的MEMS器件的系统和方法包括密封两个衬底之间的绝缘气体的气密密封件,其中之一支撑MEMS器件。 可以通过加热至少两个金属层来形成气密密封,以便熔化至少一个金属层。 第一熔化的金属材料流入并与第二金属材料形成合金,形成封装MEMS装置的气密密封。

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