公开(公告)号：WO2004085717A1

公开(公告)日：2004-10-07

申请号：PCT/EP2003/003136

申请日：2003-03-26

Applicant: EIDGENOESSISCHE TECHNISCHE HOCHSCHULE ZUERICH ,  VON KAENEL, Hans

Inventor： VON KAENEL, Hans

IPC: C30B25/02

CPC classification number: C30B25/18 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

Abstract: Method for forming a highly relaxed epitaxial semiconductor layer (52) with a thickness between 100nm and 800nm in a growth chamber. The method comprises the steps: - providing a substrate (51) in the growth chamber on a substrate carrier,- maintaining a constant substrate temperature (T s ) of the substrate (51) in a range between 350°C and 500°C,- establishing a high-density, low-energy plasma in the growth chamber such that the substrate (51) is being exposed to the plasma,- directing Silane gas (SiH 4 ) and Germane gas (GeH 4 ) through the gas inlet into the growth chamber, the flow rates of the Silane gas and the Germane gas being adjusted in order to form said semiconductor layer (52) by means of vapor deposition with a growth rate in a range between 1 and 10 nm/s, said semiconductor layer (52) having a Germanium concentration x in a range between 0

Abstract translation: 用于在生长室中形成厚度在100nm和800nm之间的高度松弛的外延半导体层（52）的方法。 该方法包括以下步骤： - 在衬底载体上的生长室中提供衬底（51）， - 将衬底（51）的恒定衬底温度（Ts）保持在350℃和500℃之间的范围内， 在生长室中建立高密度，低能量等离子体，使得衬底（51）暴露于等离子体; - 通过气体入口将硅烷气体（SiH4）和锗烷气体（GeH4）引导到生长室中， 调节硅烷气体和锗烷气体的流速以通过气相沉积形成所述半导体层（52），生长速率在1和10nm / s之间，所述半导体层（52）具有 锗浓度x在0

公开(公告)号：WO2006097804A2

公开(公告)日：2006-09-21

申请号：PCT/IB2006000421

申请日：2006-02-28

Applicant: EPISPEED S A ,  VON KAENEL HANS

Inventor： VON KAENEL HANS

CPC classification number: H01L21/02293 ,  C30B23/02 ,  C30B23/06 ,  C30B23/08 ,  C30B25/105 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  Y10T428/266

Abstract: An apparatus and process for fast epitaxial deposition of compound semiconductor layers includes a low-energy, high-density plasma generating apparatus for plasma enhanced vapor phase epitaxy. The process provides in one step, combining one or more metal vapors with gases of non-metallic elements in a deposition chamber. Then highly activating the gases in the presence of a dense, low-energy plasma. Concurrently reacting the metal vapor with the highly activated gases and depositing the reaction product on a heated substrate in communication with a support immersed in the plasma, to form a semiconductor layer on the substrate. The process is carbon-free and especially suited for epitaxial growth of nitride semiconductors at growth rates up to 10 nm/s and substrate temperatures below 1000°C on large-area silicon substrates. The process requires neither carbon-containing gases nor gases releasing hydrogen, and in the absence of toxic carrier or reagent gases, is environment friendly.

Abstract translation: 用于化学半导体层的快速外延沉积的装置和方法包括用于等离子体增强气相外延的低能量，高密度等离子体产生装置。 该方法在一个步骤中提供了一个或多个金属蒸气与沉积室中的非金属元素的气体。 然后在密集的低能量等离子体的存在下高度活化气体。 同时使金属蒸汽与高活性气体反应，并将反应产物沉积在与浸在等离子体中的载体连通的加热衬底上，以在衬底上形成半导体层。 该方法是无碳的，特别适用于氮化物半导体的外延生长，其生长速率高达10nm / s，并且在大面积硅衬底上的衬底温度低于1000℃。 该方法既不需要含碳气体也不需要释放氢气，在不存在有毒载体或试剂气体的情况下，环境友好。

公开(公告)号：WO2005108654A1

公开(公告)日：2005-11-17

申请号：PCT/IB2005/001204

申请日：2005-05-02

Applicant: EPISPEED S.A. ,  VON KAENEL, Hans

Inventor： VON KAENEL, Hans

IPC: C30B25/02

CPC classification number: H01L21/0262 ,  C23C16/0209 ,  C23C16/0272 ,  C23C16/28 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L31/0304 ,  H01L31/0392 ,  H01L2924/10329 ,  H01L2924/19042 ,  Y02E10/544

Abstract: Relaxed germanium buffer layers can be grown economically on misoriented silicon wafers by low-energy plasma-enhanced chemical vapor deposition. In conjunction with thermal annealing and/or patterning, the buffer layers can serve as high-quality virtual substrates for the growth of crack­free GaAs layers suitable for high-efficiency solar cells, lasers and field effect transistors.

Abstract translation: 通过低能量等离子体增强化学气相沉积可以在经取向的硅晶片上经济地生长松弛的锗缓冲层。 结合热退火和/或图案化，缓冲层可以用作适合于高效太阳能电池，激光器和场效应晶体管的无裂纹GaAs层的生长的高质量虚拟衬底。

公开(公告)号：WO03044839A2

公开(公告)日：2003-05-30

申请号：PCT/EP0209922

申请日：2002-09-05

Applicant: ETH ZUERICH ,  VON KAENEL HANS

Inventor： VON KAENEL HANS

IPC: C23C16/50 ,  H01L21/205 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812

CPC classification number: H01L29/7782 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262

Abstract: Method for making semiconductor structures comprising the steps: - forming a virtual substrate on a silicon substrate with a graded Si>1-x x 1-x x 2

Abstract translation: 制造半导体结构的方法包括以下步骤：在硅衬底上形成具有渐变Si> 1-x Ge x层和非渐变Si 1-x Ge层的虚拟衬底，使用 高密度，低能量等离子体增强化学气相沉积（LEPECVD）工艺，生长速率高于2nm / s，基底温度在400°至850°之间，气体入口处的总反应气体流量在5sccm和 200sccm; - 在虚拟衬底上形成有源区，其包括Ge沟道和使用低密度，低能量等离子体增强化学气相沉积（LEPECVD）工艺的至少一个调制掺杂层，其通过引入氢（H> 2＆lt;进入生长室，将衬底温度保持在400°至500°之间，并通过以脉冲方式将掺杂剂气体引入生长室以提供调制掺杂层。

公开(公告)号：WO2011161157A3

公开(公告)日：2012-06-14

申请号：PCT/EP2011060440

申请日：2011-06-22

Applicant: SYTEC BAUSYSTEME AG ,  VON KAENEL HANS RUDOLF

Inventor： VON KAENEL HANS RUDOLF

IPC: E01C3/00 ,  E01C9/00

CPC classification number: E01C3/006 ,  E01C9/004 ,  E02D17/202

Abstract: A ground covering comprises a mat-like base (1) which can be placed on the underlying ground (7) and which is provided with apertures (3). A granular bulk material, which forms the walk-on surface of the ground covering, can be applied to this mat-like base (1). The mat-like base (1) is provided with studs (6) which are mounted onto the webs (4) bounding the apertures (3) and which, with the mat-like base (1) placed on the underlying ground (7), are oriented upwardly against the granular bulk material. The studs (6) each form the corner points of a substantially equilateral polygon. The bulk material consists of pieces of stone (9) which have a particle size B which corresponds at least to half the length A of one side of the polygon. A uniform and hard-wearing ground covering is thereby obtained.

Abstract translation: 一种地板覆层，包括一个在地面上（7），其被设置有开口auflegbare垫状支撑（1）（3）。 在该垫状支撑件（1）的粒状散料可以应用，其形成地面覆盖物的行走表面。 在床垫状垫（1）被连接到所述开口限制（3）条（4）（6）附接销，其设置在底面（7）的状态的床垫状垫（1）的被抵靠粒状散料向上对准。 在每种情况下心轴（6）形成大致等边多边形的角。 散装材料由岩石块（9），其具有的粒度B，其至少一半的多边形的边的长度A的。 这给出了一个同样庞大的和持久的地板。

公开(公告)号：WO2006097804B1

公开(公告)日：2007-02-15

申请号：PCT/IB2006000421

申请日：2006-02-28

Applicant: EPISPEED S A ,  VON KAENEL HANS

Inventor： VON KAENEL HANS

IPC: H01J37/32 ,  C23C14/32 ,  C30B23/08 ,  C30B29/40

CPC classification number: H01L21/02293 ,  C30B23/02 ,  C30B23/06 ,  C30B23/08 ,  C30B25/105 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  Y10T428/266

Abstract: An apparatus and process for fast epitaxial deposition of compound semiconductor layers includes a low-energy, high-density plasma generating apparatus for plasma enhanced vapor phase epitaxy. The process provides in one step, combining one or more metal vapors with gases of non-metallic elements in a deposition chamber. Then highly activating the gases in the presence of a dense, low-energy plasma. Concurrently reacting the metal vapor with the highly activated gases and depositing the reaction product on a heated substrate in communication with a support immersed in the plasma, to form a semiconductor layer on the substrate. The process is carbon-free and especially suited for epitaxial growth of nitride semiconductors at growth rates up to 10 nm/s and substrate temperatures below 1000°C on large-area silicon substrates. The process requires neither carbon-containing gases nor gases releasing hydrogen, and in the absence of toxic carrier or reagent gases, is environment friendly.

Abstract translation: 用于化学半导体层的快速外延沉积的装置和方法包括用于等离子体增强气相外延的低能量，高密度等离子体产生装置。 该方法在一个步骤中提供了一个或多个金属蒸气与沉积室中的非金属元素的气体。 然后在密集的低能量等离子体的存在下高度活化气体。 同时使金属蒸汽与高活性气体反应，并将反应产物沉积在与浸在等离子体中的载体连通的加热衬底上，以在衬底上形成半导体层。 该方法是无碳的，特别适用于氮化物半导体的外延生长，其生长速率高达10nm / s，并且在大面积硅衬底上的衬底温度低于1000℃。 该方法既不需要含碳气体也不需要释放氢气，在不存在有毒载体或试剂气体的情况下，环境友好。

公开(公告)号：WO2006097804A3

公开(公告)日：2006-09-21

申请号：PCT/IB2006/000421

申请日：2006-02-28

Applicant: EPISPEED S.A. ,  VON KAENEL, Hans

Inventor： VON KAENEL, Hans

IPC: H01J37/32 ,  C30B23/08 ,  C30B29/40 ,  C23C14/32

Abstract: An apparatus and process for fast epitaxial deposition of compound semiconductor layers includes a low-energy, high-density plasma generating apparatus for plasma enhanced vapor phase epitaxy. The process provides in one step, combining one or more metal vapors with gases of non-metallic elements in a deposition chamber. Then highly activating the gases in the presence of a dense, low-energy plasma. Concurrently reacting the metal vapor with the highly activated gases and depositing the reaction product on a heated substrate in communication with a support immersed in the plasma, to form a semiconductor layer on the substrate. The process is carbon-free and especially suited for epitaxial growth of nitride semiconductors at growth rates up to 10 nm/s and substrate temperatures below 1000°C on large-area silicon substrates. The process requires neither carbon-containing gases nor gases releasing hydrogen, and in the absence of toxic carrier or reagent gases, is environment friendly.

公开(公告)号：WO2006000846A1

公开(公告)日：2006-01-05

申请号：PCT/IB2005/001104

申请日：2005-04-22

Applicant: EPISPEED S.A. ,  VON KAENEL, Hans ,  HAID, Reinhard

Inventor： VON KAENEL, Hans ,  HAID, Reinhard

IPC: H01J37/32

CPC classification number: H01J37/32477 ,  C23C16/4404 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/513 ,  H01J37/32009 ,  H01J37/32055

Abstract: A system (10) for low-energy plasma-enhanced chemical vapor deposition comprising plasma source (100), deposition chamber (200) and gas distribution system (300) for semiconductor epitaxy on substrates up to 300 mm in size is described. The system (10) allows for fast switching from high to low deposition rates, and film thickness control at the monolayer level. It incorporates chamber self-cleaning and the provisions for selective epitaxial growth. The system (10) contains a broad-area plasma source (100) which can be used also in other applications, such as low-energy ion implantation and plasma treatment of surfaces.

Abstract translation: 描述了一种用于低能量等离子体增强化学气相沉积的系统（10），其包括等离子体源（100），沉积室（200）和气体分配系统（300），用于半导体外延尺寸在300mm以上的基板上。 系统（10）允许从高到低沉积速率的快速切换，以及在单层水平的膜厚度控制。 它包含室内自洁和选择性外延生长的规定。 系统（10）包含广域等离子体源（100），其也可用于其他应用中，例如低能离子注入和表面的等离子体处理。