-
公开(公告)号：WO2008036064A3
公开(公告)日：2008-09-25
申请号：PCT/US2006021564
申请日：2006-06-01
Applicant: WOSTEC INC , SMIRNOV VALERY K , KIBALOV DMITRY S
Inventor： SMIRNOV VALERY K , KIBALOV DMITRY S
IPC: G02B5/30
CPC classification number: G02B5/3058 , B82Y20/00 , Y10S438/974 , Y10S438/982 , Y10T428/249953 , Y10T428/249961
Abstract: The preferred embodiment provides for development and use of an array of nanowires with a period smaller then 150 nm for applications such as an optical polarizer. To manufacture such structures the preferred embodiment employs a hard nanomask. This nanomask includes a substantially periodic array of substantially parallel elongated elements having a wavelike cross-section.
Abstract translation: 优选的实施方案提供了对于诸如光学偏振器之类的应用，具有小于150nm的周期的纳米线阵列的开发和使用。 为了制造这种结构，优选的实施方案采用硬纳米掩模。 该纳米掩模包括具有波浪形横截面的基本上平行的细长元件的基本上周期性的阵列。
-
公开(公告)号：WO2018156047A1
公开(公告)日：2018-08-30
申请号：PCT/RU2017/000338
申请日：2017-05-23
Applicant: WOSTEC, INC
IPC: H01L21/265
Abstract: An array of nanowires with a period smaller than 150 nm on the surface of curved transparent substrate can be used for applications such as optical polarizers. A curved hard nanomask can be used to manufacture such structures. This nanomask includes a substantially periodic array of substantially parallel elongated elements having a wavelike cross-section. The fabrication method of the nanomask uses ion beams.
-
公开(公告)号：WO2006107672A2
公开(公告)日：2006-10-12
申请号：PCT/US2006/011420
申请日：2006-03-28
Applicant: WOSTEC, INC. , SMIRNOV, Valery , KIBALOV, Dmitry
Inventor： SMIRNOV, Valery , KIBALOV, Dmitry
IPC: B01D53/22
CPC classification number: B01D71/022 , B01D53/228 , B01D67/0062 , B01D67/009 , B01D69/02 , B01D69/12 , B01J23/44 , B01J35/065 , B82Y30/00 , C01B3/505 , Y10S438/961 , Y10S438/962
Abstract: A composite material that may be used for a thin membrane is disclosed. This composite material includes first material that has a quasi-periodic system of vertical trenches (nanotrenches) with wavelength period that may be in the range between 20 and 500 nm. These nanotrenches are formed as openings between bordering elongated elements. The nanotrenches are at least partially filled with a second material that has physical-chemical characteristics substantially different from the first material.
Abstract translation: 公开了可用于薄膜的复合材料。 该复合材料包括具有波长周期可以在20和500nm之间的垂直沟槽（纳米管）的准周期性系统的第一材料。 这些纳米管形成为接合细长元件之间的开口。 纳米管至少部分地填充有具有与第一材料基本上不同的物理化学特性的第二材料。
-
4.发明申请
公开(公告)号：WO2018093284A1
公开(公告)日：2018-05-24
申请号：PCT/RU2016/000796
申请日：2016-11-18
Applicant: WOSTEC, INC.
Abstract: Long term optical memory includes a storage medium composed from an array of silicon nanoridges positioned onto the fused silica glass. The array has first and second polarization contrast corresponding to different phase of silicon. The first polarization contrast results from amorphous phase of silicon and the second polarization contrast results from crystalline phase of silicon. The first and second polarization states are spatially distributed over plurality of localized data areas of the storage medium.
-
5.发明申请WAVELIKE HARD NANOMASK ON A TOPOGRAPHIC FEATURE AND METHODS OF MAKING AND USING 审中-公开WAVELIKE HARD NANOMASK的地理特征及其制作与使用方法
公开(公告)号：WO2015199573A1
公开(公告)日：2015-12-30
申请号：PCT/RU2014/000458
申请日：2014-06-26
Applicant: WOSTEC, INC.
IPC: H01L21/265 , H01L21/027 , B82Y40/00
CPC classification number: H01L21/32139 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/0337 , H01L21/266 , H01L21/3086 , H01L21/3088 , H01L29/0676 , H01L29/66439 , H01L29/66469
Abstract: An array of nanowires with a period smaller than 150 nm can be used for optoelectronics and semiconductor electronics applications. A hard nanomask is registered to a lithographically defined feature and can be used to manufacture such structures. This nanomask includes a substantially periodic array of substantially parallel elongated elements having a wavelike cross-section. The fabrication method of the nanomask may be contactless and uses ion beams.
Abstract translation: 周期小于150nm的纳米线阵列可用于光电子和半导体电子应用。 硬纳米掩模被记录在光刻定义的特征上，并且可以用于制造这种结构。 该纳米掩模包括具有波浪形横截面的基本上平行的细长元件的基本上周期性的阵列。 纳米掩模的制造方法可以是非接触的并且使用离子束。
-
Patent Agency Ranking
公开(公告)号：WO2008036064A2
公开(公告)日：2008-03-27
申请号：PCT/US2006/021564
申请日：2006-06-01
Applicant: WOSTEC, INC. , SMIRNOV, Valery, K. , KIBALOV, Dmitry, S.
Inventor： SMIRNOV, Valery, K. , KIBALOV, Dmitry, S.
CPC classification number: G02B5/3058 , B82Y20/00 , Y10S438/974 , Y10S438/982 , Y10T428/249953 , Y10T428/249961
Abstract: The preferred embodiment provides for development and use of an array of nanowires with a period smaller then 150 nm for applications such as an optical polarizer. To manufacture such structures the preferred embodiment employs a hard nanomask. This nanomask includes a substantially periodic array of substantially parallel elongated elements having a wavelike cross-section.
Abstract translation: 本优选实施例为诸如光学偏振器之类的应用提供周期小于150nm的纳米线阵列的开发和使用。 为了制造这样的结构，优选实施例使用硬纳米掩模。 该纳米掩模包括具有波状横截面的基本平行的细长元件的基本上周期性的阵列。
-
公开(公告)号：WO2018156042A1
公开(公告)日：2018-08-30
申请号：PCT/RU2017/000095
申请日：2017-02-27
Applicant: WOSTEC, INC.
IPC: H01L21/265
Abstract: An array of nanowires with a period smaller then 150 nm on the surface of curved transparent substrate can be used for applications such as optical polarizers. A curved hard nanomask can be used to manufacture such structures. This nanomask includes a substantially periodic array of substantially parallel elongated elements having a wavelike cross-section. The fabrication method of the nanomask uses ion beams.
-
8.发明申请SERS-SENSOR WITH NANOSTRUCTURED LAYER AND METHODS OF MAKING AND USING 审中-公开具有纳米结构层的SERS传感器及其制造和使用方法
公开(公告)号：WO2013141740A1
公开(公告)日：2013-09-26
申请号：PCT/RU2012/000210
申请日：2012-03-23
CPC classification number: G01N21/658 , B81C1/00031 , B81C2201/0143 , B82Y15/00 , B82Y40/00 , C23C14/3442 , G01N2201/06113 , Y10S977/81
Abstract: A nanostructured arrangement includes a substrate having a surface and comprising a metal and a nanostructured layer formed on the substrate surface by an ion beam. The nanostructured layer includes a plurality of hollow metal nanospheres. Each of the plurality of nanospheres includes a chemical compound formed from the metal of the substrate by the ion beam. An example of a nanostructured arrangement is a surface enhanced Raman scattering (SERS) sensor.
Abstract translation: 纳米结构布置包括具有表面并且包括通过离子束在衬底表面上形成的金属和纳米结构层的衬底。 纳米结构层包括多个中空金属纳米球。 多个纳米球中的每一个包括通过离子束从衬底的金属形成的化合物。 纳米结构布置的示例是表面增强拉曼散射（SERS）传感器。
-
9.发明申请
公开(公告)号：WO2013006077A1
公开(公告)日：2013-01-10
申请号：PCT/RU2011/000489
申请日：2011-07-06
Applicant: WOSTEC, INC. , SMIRNOV, Valery K. , KIBALOV, Dmitry S.
Inventor： SMIRNOV, Valery K. , KIBALOV, Dmitry S.
CPC classification number: H01L31/02363 , B82Y20/00 , B82Y30/00 , H01L31/02327 , Y02E10/50
Abstract: A solar cell includes a base and a nanostructured layer formed on the base. The nanostructured layer has a nanostructured surface opposite the base. The nanostructured surface has a quasi-periodic, anisotropic array of elongated ridge elements having a wave-ordered structure pattern, each ridge element having a wavelike cross-section and oriented substantially in a first direction.
Abstract translation: 太阳能电池包括在基底上形成的基底和纳米结构层。 纳米结构层具有与基底相对的纳米结构化表面。 纳米结构表面具有具有波浪结构图案的细长脊状元件的准周期性各向异性阵列，每个脊元件具有波形横截面并且基本上在第一方向上取向。
-
公开(公告)号：WO2006107672A3
公开(公告)日：2009-04-09
申请号：PCT/US2006011420
申请日：2006-03-28
Applicant: WOSTEC INC , SMIRNOV VALERY , KIBALOV DMITRY
Inventor： SMIRNOV VALERY , KIBALOV DMITRY
IPC: B01D53/22
CPC classification number: B01D71/022 , B01D53/228 , B01D67/0062 , B01D67/009 , B01D69/02 , B01D69/12 , B01J23/44 , B01J35/065 , B82Y30/00 , C01B3/505 , Y10S438/961 , Y10S438/962
Abstract: A composite material that may be used for a thin membrane is disclosed. This composite material includes first material that has a quasi-periodic system of vertical trenches (nanotrenches) with wavelength period that may be in the range between 20 and 500 nm. These nanotrenches are formed as openings between bordering elongated elements. The nanotrenches are at least partially filled with a second material that has physical-chemical characteristics substantially different from the first material.
Abstract translation: 公开了可用于薄膜的复合材料。 该复合材料包括具有波长周期可以在20和500nm之间的垂直沟槽（纳米管）的准周期性系统的第一材料。 这些纳米管形成为接合细长元件之间的开口。 纳米管至少部分地填充有具有与第一材料基本上不同的物理化学特性的第二材料。
-
-
-
-
-
-
-
-
-
Search Results
16
records
(took 0.012 seconds)
