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公开(公告)号：WO2011069343A1
公开(公告)日：2011-06-16
申请号：PCT/CN2010/002032
申请日：2010-12-13
Applicant: 安集微电子(上海)有限公司 , 姚颖 , 宋伟红 , 荆建芬 , 孙展龙
IPC: C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/3212
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公开(公告)号：WO2008025209A1
公开(公告)日：2008-03-06
申请号：PCT/CN2007/002102
申请日：2007-07-09
IPC: C09G1/02 , H01L21/304 , C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
Abstract: A polishing slurry for low dielectric material is disclosed. It includes abrasive and water, and is characterized in that, it further contains one or more kinds of metal chelating agents, azole-species as film-forming agent and oxidizing agent. Under lower pressure, the present polishing slurry has higher polishing speed on low dielectric material, suitable polishing selectivity for other materials, and better surface finish after polishing.
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公开(公告)号：WO2010012159A1
公开(公告)日：2010-02-04
申请号：PCT/CN2009/000863
申请日：2009-08-03
Applicant: 安集微电子(上海)有限公司 , 姚颖 , 宋伟红 , 荆建芬
IPC: C09G1/02 , C09K3/14 , H01L21/304
CPC classification number: H01L21/31053 , C09G1/02 , C09K3/1463
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公开(公告)号：WO2008040183A1
公开(公告)日：2008-04-10
申请号：PCT/CN2007/002808
申请日：2007-09-24
Applicant: 安集微电子(上海)有限公司 , 荆建芬 , 宋伟红 , 陈国栋 , 姚颖
IPC: C09G1/02
CPC classification number: C09G1/02
Abstract: A chemical-mechanical polishing liquid for polishing low-dielectric material is disclosed, which comprises abrasive particles, corrosion inhibitor, oxidizer and water, and the characteristic of the liquid is in that further comprises at least one kind of accelerator. The polishing liquid have higher removal rate for low-dielectric material under lower pressure, and also have higher removal rate for other material such as metal copper (Cu), silica (Teos), metal tantalum (Ta)/ tantalum nitride (TaN) barrier and the like.
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公开(公告)号：WO2008025208A1
公开(公告)日：2008-03-06
申请号：PCT/CN2007/002101
申请日：2007-07-09
IPC: C09G1/02 , H01L21/304 , C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
Abstract: A polishing slurry containing blended abrasives for low dielectric material is disclosed, which includes two or more kinds of polishing abrasives, wherein, one of the abrasives is Al-doped silica, and the second abrasive is the one selected from silica, alumina, alumina -coated silica or zirconia-coated silica or their combinations. The present polishing slurry not only can effectively adjust the polishing speed of low dielectric carbon-doped silica (CDO) and silica, but also can prevent local and throughout corrosion during metal polishing, thus can improve the acceptability. Moreover, it is useful in integrate circuit which contains metal,metal barrier, carbon-doped silica and silica simultaneously.
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Patent Agency Ranking
公开(公告)号：WO2008011796A1
公开(公告)日：2008-01-31
申请号：PCT/CN2007/002103
申请日：2007-07-09
IPC: G09G1/02 , H01L21/304 , C09K3/14
CPC classification number: C09K3/1463 , C09G1/02 , H01L21/31053 , H01L21/3212
Abstract: A polishing slurry including Al-doped silica and water for low dielectric material is disclosed, it is characterized in that, it further contains active micro-molecule materials which are ammonium-ion or quaternary ammonium ion containing compound. The present polishing slurry has promotion on polishing low dielectric material such as CDO and TEOS or SION etc., while it has little effect on polishing speed for Ta and Cu. Thus it can greatly improve the polishing selectivity for substrates. Moreover, the present polishing slurry can greatly decrease the surface defects such as scratch, corrosion, pitting erosion and the like.
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公开(公告)号：WO2007048315A1
公开(公告)日：2007-05-03
申请号：PCT/CN2006/002619
申请日：2006-10-08
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
Abstract: A chemical mechanical polishing paste for tantalum barrier layer is disclosed, which comprises abrasive particles, organic phosphonic acid, tetrazoles compounds and carrier. The present chemical mechanical polishing paste can prevent local and general corrosion of metal material, reduce contaminant on substrate surface, save abrasive particles, so as to achieve the appropriate polishing selectivity between different metals and oxides.
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公开(公告)号：WO2007048314A1
公开(公告)日：2007-05-03
申请号：PCT/CN2006/002618
申请日：2006-10-08
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
Abstract: A chemical mechanical polishing paste for copper is disclosed, which comprises a abrasive particles, an organic phosphonic acid, polyacrylic acids and/or their copolymer, an oxidant and carrier. The present paste can prevent local and general corrosion of metal materials, reduce contamination on liner surface, save abrasive particles, improve removing rate of Ta and reduce removing rate of Cu, so as to therefor obtain the suitable polishing selectivity for different substrates.
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公开(公告)号：WO2007048313A1
公开(公告)日：2007-05-03
申请号：PCT/CN2006/002617
申请日：2006-10-08
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
Abstract: A chemical mechanical polishing paste for barrier layer is disclosed, which comprises a abrasive particles, an organic phosphonic acid, polyacrylic acids and/or their salts and/or copolymer of polyacrylic acids, an oxidant and carrier. The present paste can prevent local and general corrosion of metal materials, reduce contamination on liner surface, save abrasive particles, improve removing rate of Ta and reduce removing rate of Cu, so as to obtain the suitable polishing selectivity for different substrates.
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