COATER WITH AUTOMATIC CLEANING FUNCTION AND COATER AUTOMATIC CLEANING METHOD
    2.
    发明申请
    COATER WITH AUTOMATIC CLEANING FUNCTION AND COATER AUTOMATIC CLEANING METHOD 审中-公开
    具有自动清洁功能和涂层自动清洗方法

    公开(公告)号:WO2016041151A1

    公开(公告)日:2016-03-24

    申请号:PCT/CN2014/086644

    申请日:2014-09-16

    IPC分类号: H01L21/00

    摘要: A coater with automatic cleaning function and a coater automatic cleaning method. The coater (100,200,300,400,500,600,700,800) includes a coater chamber (101,201,301,401,501,601,701,801) capable of being filled up with cleaning solution, a substrate chuck (102,202,302,402,502,602,702,802) holding and positioning a substrate (103,203,303,403,503,603,703,803), and at least one shroud (108,208,308,408,508) capable of moving up for preventing photoresist from splashing out of the coater chamber (101,201,301,401,501,601,701,801), or moving down and immersing into the cleaning solution for cleaning. The coater (100,200,300,400,500,600,700,800) automatic cleaning method includes the following steps: turning off a liquid outlet valve (118,218,318,418A,418B,518,532,618,718,818) of the coater (100,200,300,400,500,600,700,800); filling up a coater chamber (101,201,301,401,501,601,701,801) with cleaning solution; after photoresist in the coater chamber (101,201,301,401,501,601,701,801) being dissolved into the cleaning solution, turning on the liquid outlet valve (118,218,318,418A,418B,518,532,618,718,818) and draining the cleaning solution out of the coater chamber (101,201,301,401,501,601,701,801).

    摘要翻译: 具有自动清洗功能的涂布机和涂布机的自动清洗方法。 涂布机(100,200,300,400,500,600,700,800)包括能够填充清洁溶液的涂布机室(101,201,301,401,501,601,701,801),保持和定位基板(103,203,303,403,503,603,703,803)的基板卡盘(102,202,302,402,502,602,702,802)以及能够向上移动以防止的基板(108,208,308,408,508) 从涂膜室(101,201,301,401,501,601,701,801)喷出的光致抗蚀剂,或者向下移动并浸入清洁溶液中以进行清洁。 涂布机(100,200,300,400,500,600,700,800)自动清洗方法包括以下步骤:关闭涂布机的液体出口阀(118,218,318,418A,418B,518,532,618,718,818)(100,200,300,400,500,600,700,800); 用清洁液填充涂布室(101,201,301,401,501,601,701,801); 在涂布机室(101,201,301,401,501,601,701,801)中的光致抗蚀剂溶解在清洁溶液中之后,打开液体出口阀(118,218,318,418A,418B,518,532,618,718,818)并将清洁溶液排出涂布机室(101,201,301,401,501,601,701,801)。

    METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS
    3.
    发明申请
    METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
    清洗半导体波形的方法和装置

    公开(公告)号:WO2009079874A1

    公开(公告)日:2009-07-02

    申请号:PCT/CN2007/071210

    申请日:2007-12-10

    IPC分类号: H01L21/30

    CPC分类号: H01L21/67051

    摘要: An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.

    摘要翻译: 用于清洁和调理诸如晶片的半导体衬底的表面的设备包括可转动卡盘,腔室,用于收集具有一个或多个排出口的清洁溶液的可旋转托盘,用于收集多个清洁溶液的多个受体,用于驱动的​​第一马达 卡盘和第二马达驱动托盘。 托盘中的排水出口可以位于排水出口下方的指定接收器的正上方。 由托盘收集的清洁溶液可以被引导到指定的受体中。 该设备的一个特征是具有坚固且精确控制的清洁溶液循环,具有最小的交叉污染。

    METHODS AND APPARATUS FOR CLEANING SUBSTRATES

    公开(公告)号:WO2019144273A1

    公开(公告)日:2019-08-01

    申请号:PCT/CN2018/073810

    申请日:2018-01-23

    摘要: A method and an apparatus for cleaning a substrate are provided. The substrate (1010) comprises features (4034) of patterned structures. The method comprises placing the substrate on a substrate holder (1014) configured to rotate the substrate; applying cleaning liquid (1032) on the substrate; rotating the substrate by the substrate holder at a first rate when acoustic energy is being applied to the cleaning liquid by a transducer (1004); and rotating the substrate by the substrate holder at a second rate higher than the first rate when acoustic energy is not being applied to the cleaning liquid by the transducer.

    SYSTEM FOR CLEANING SEMICONDUCTOR WAFERS
    5.
    发明申请

    公开(公告)号:WO2019095127A1

    公开(公告)日:2019-05-23

    申请号:PCT/CN2017/111016

    申请日:2017-11-15

    IPC分类号: H01L21/02

    CPC分类号: H01L21/02057 B08B3/12

    摘要: A system for controlling damages in cleaning a semiconductor wafer (1010) comprising features of patterned structures, comprising: a wafer chuck (1014) for temporary restraining a semiconductor wafer (1010) during a cleaning process; a nozzle (1012) for delivering a cleaning liquid over a surface of the semiconductor wafer (1010); a sonic generator (25082) configured to alternately operate at a first frequency (f 1 ) and a first power level (P 1 ) for a first predetermined period of time (τ 1 ) and at a second frequency (f2) and a second power level (P2) for a second predetermined period of time (τ 2 ), to impart sonic energy to the cleaning liquid, wherein the first predetermined period of time (τ 1 ) and the second predetermined period of time (τ 2 ) consecutively follows one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

    APPARATUS AND METHOD FOR REMOVING FILM ON EDGE OF BACKSIDE OF WAFER
    6.
    发明申请
    APPARATUS AND METHOD FOR REMOVING FILM ON EDGE OF BACKSIDE OF WAFER 审中-公开
    用于去除膜背面膜片的装置和方法

    公开(公告)号:WO2015184628A1

    公开(公告)日:2015-12-10

    申请号:PCT/CN2014/079323

    申请日:2014-06-06

    IPC分类号: H01L21/02 H01L21/30

    摘要: An apparatus and a method for removing a film on edge of backside of a wafer. The apparatus includes a vacuum chuck (110) having an inner groove (111) and an outer groove (1113) defined at the peripheral edge of the vacuum chuck (110), an inner sealing ring (1115) disposed in the inner groove (111); and an outer sealing ring (1116) disposed in the outer groove (1113). When the wafer is put on the vacuum chuck (110), the space defined by the wafer and the area of the vacuum chuck (110) encircled by the inner sealing ring (1115) is vacuumized for holding and positioning the wafer on the vacuum chuck (110), and the space defined by the wafer and the area between the inner sealing ring (1115) and the outer sealing ring (1116) of the vacuum chuck (110) is filled with pressurized gas for making the space defined by the wafer and the area between the inner sealing ring (1115)and the outer sealing ring (1116) of the vacuum chuck (110) maintain positive pressure for preventing liquid from getting into the center area of the backside of the wafer.

    摘要翻译: 一种用于去除晶片背面边缘的薄膜的设备和方法。 该装置包括:真空吸盘(110),其具有限定在真空吸盘(110)的周缘的内槽(111)和外槽(1113);内密封环(1115),设置在内槽 ); 以及设置在外槽(1113)中的外密封圈(1116)。 当将晶片放在真空吸盘(110)上时,将由晶片限定的空间和由内密封环(1115)包围的真空吸盘(110)的面积抽真空,以将晶片保持并定位在真空吸盘 (110),并且由所述晶片限定的空间和所述真空卡盘(110)的所述内密封环(1115)和所述外密封环(1116)之间的面积填充有用于制造由所述晶片限定的空间的加压气体 并且真空吸盘(110)的内密封环(1115)和外密封圈(1116)之间的面积保持正压,以防止液体进入晶片背面的中心区域。

    APPARATUS AND METHOD FOR DETECTING POSITION OF WAFER
    7.
    发明申请
    APPARATUS AND METHOD FOR DETECTING POSITION OF WAFER 审中-公开
    检测波形位置的装置和方法

    公开(公告)号:WO2013163791A1

    公开(公告)日:2013-11-07

    申请号:PCT/CN2012/074966

    申请日:2012-05-02

    IPC分类号: H01L21/68

    CPC分类号: H01L21/67259 H01L21/681

    摘要: An apparatus and method for detecting position of a wafer on a chuck are disclosed. The apparatus includes a camera (6) and an image processor (100) which includes a transforming unit (101), a comparing unit (103) and a determining unit (104). The method includes the following steps: taking an image of edge of the wafer and send image data to the image processor (S23); transforming the image data into image pixels and comparing the image pixels with reference pixels (S25'), and determining whether the wafer is in position on the chuck (S26).

    摘要翻译: 公开了一种用于检测卡盘上的晶片位置的装置和方法。 该装置包括摄像机(6)和包括变换单元(101),比较单元(103)和确定单元(104)的图像处理器(100)。 该方法包括以下步骤:拍摄晶片边缘的图像并将图像数据发送到图像处理器(S23); 将图像数据变换为图像像素,并将图像像素与参考像素(S25')进行比较,以及确定晶片是否处于卡盘上的位置(S26)。

    METHODS AND APPARATUS FOR CLEANING SUBSTRATES
    8.
    发明申请
    METHODS AND APPARATUS FOR CLEANING SUBSTRATES 审中-公开
    用于清洁基材的方法和设备

    公开(公告)号:WO2018053678A1

    公开(公告)日:2018-03-29

    申请号:PCT/CN2016/099428

    申请日:2016-09-20

    IPC分类号: H01L21/67

    摘要: A method for cleaning a substrate without damaging a patterned structure on the substrate using an ultra/mega sonic device (1003), comprises: applying a liquid into a space between the substrate and the ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device (1003); after a micro jet generated by a bubble implosion and before said micro jet generated by the bubble implosion damaging the patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device (1003); after the temperature inside a bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.

    摘要翻译: 一种使用超大型声波装置(1003)来清洁基板而不损坏基板上的图案化结构的方法包括:将液体施加到基板与超大型声波之间的空间中 设备; 以频率f1和功率P1设置超/兆声波电源以驱动所述超声/兆声波设备(1003); 在由气泡内爆产生的微射流之后且在由气泡内爆产生的所述微射流损坏衬底上的图案化结构之后,以频率f2和功率P2设置所述超/兆声波电源以驱动所述超声/兆声波装置( 1003); 在气泡内的温度冷却到设定温度之后,再次设置频率f1和功率P1的所述超大/超声波电源; 重复上述步骤直至清洗基板。

    METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS
    9.
    发明申请
    METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
    用于清洁半导体晶片的方法和设备

    公开(公告)号:WO2017173588A1

    公开(公告)日:2017-10-12

    申请号:PCT/CN2016/078510

    申请日:2016-04-06

    IPC分类号: H01L21/67

    摘要: A method for cleaning semiconductor substrate (1010,2010) without damaging patterned structure on the semiconductor substrate (1010,2010) using ultra/mega sonic device (1003,2003) comprises applying liquid into a space between a substrate (1010,2010) and an ultra/mega sonic device (1003,2003); setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device (1003,2003); before bubble cavitation in the liquid damaging patterned structure on the substrate (1010,2010), setting the ultra/mega sonic power supply at zero output;after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again;detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply;comparing the detected power on time with a preset time τ1, or comparing the detected power off time with a preset time τ2, or comparing detected amplitude of each waveform with a preset value, if the detected power on time is longer than the preset time τ1, or the detected power off time is shorter than the preset time τ2, or the detected amplitude of any waveform is larger than the preset value, shut down the ultra/mega sonic power supply and send out an alarm signal.

    摘要翻译: 一种使用超/超声波装置(1003,2003)来清洁半导体衬底(1010,2010)而不损坏半导体衬底(1010,2010)上的图案化结构的方法包括将液体施加到 衬底(1010,2010)和超/兆声波装置(1003,2003); 以频率f1和功率P1设置超/超声波电源以驱动超/超声波设备(1003,2003); 在衬底(1010,2010)上的液体损坏图案化结构中产生气泡空化之前,将超大/超声波电源设置为零输出;在气泡冷却至设定温度之后,将超/兆声波电源设置为 再次检测频率f1和功率P1;分别检测功率P1和频率f1和断电时间的功率接通时间,或者检测超大功率电源输出的每个波形的幅度;将检测到的功率接通时间与预设时间τ1进行比较, 或者将检测到的断电时间与预设时间τ2进行比较,或者将检测到的每个波形的幅度与预设值进行比较,如果检测到的功率开启时间大于预设时间τ1,或者检测到的关机时间短于预设时间 时间τ2,或任何波形的检测幅度大于预设值,关闭超大音速电源并发出报警信号。

    METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS
    10.
    发明申请
    METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
    清洗半导体波形的方法和装置

    公开(公告)号:WO2016183811A1

    公开(公告)日:2016-11-24

    申请号:PCT/CN2015/079342

    申请日:2015-05-20

    IPC分类号: H01L21/02 B08B3/12 B08B3/10

    摘要: A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f 1 and power P 1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f 2 and power P 2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f 1 and power P 1 again; repeating above steps till the substrate being cleaned. Normally, if f 1 =f 2 , then P 2 is equal to zero or much less than P 1 ; if P 1 =P 2 , then f 2 is higher than f 1 ; if the f 1 2 , then, P 2 can be either equal or less than P 1 .

    摘要翻译: 一种用于使用超/超声波装置清洁半导体衬底而不损坏衬底上的图案结构的方法,包括将液体施加到衬底和超/超声波器件之间的空间中; 设置频率f1和功率P1的超/超声波电源,以驱动所述超/超声波设备; 在基板上的所述液体破坏性图案化结构中的气泡空化之前,将所述超/超声波电源设置在频率f2和功率P2以驱动所述超/超声波装置; 在气泡冷却后的温度降至设定温度后,再次将频率f1和功率P1设置为超声波/超声波电源; 重复上述步骤直到清洁基材。 通常,如果f1 = f2,则P2等于零或远小于P1; 如果P1 = P2,则f2高于f1; 如果f1