摘要:
The present invention provides a method for cleaning substrates comprising the steps of: placing a substrate on a substrate holder; implementing a bubble less or bubble-free pre-wetting process for the substrate; and implementing an ultra/mega sonic cleaning process for cleaning the substrate.
摘要:
A coater with automatic cleaning function and a coater automatic cleaning method. The coater (100,200,300,400,500,600,700,800) includes a coater chamber (101,201,301,401,501,601,701,801) capable of being filled up with cleaning solution, a substrate chuck (102,202,302,402,502,602,702,802) holding and positioning a substrate (103,203,303,403,503,603,703,803), and at least one shroud (108,208,308,408,508) capable of moving up for preventing photoresist from splashing out of the coater chamber (101,201,301,401,501,601,701,801), or moving down and immersing into the cleaning solution for cleaning. The coater (100,200,300,400,500,600,700,800) automatic cleaning method includes the following steps: turning off a liquid outlet valve (118,218,318,418A,418B,518,532,618,718,818) of the coater (100,200,300,400,500,600,700,800); filling up a coater chamber (101,201,301,401,501,601,701,801) with cleaning solution; after photoresist in the coater chamber (101,201,301,401,501,601,701,801) being dissolved into the cleaning solution, turning on the liquid outlet valve (118,218,318,418A,418B,518,532,618,718,818) and draining the cleaning solution out of the coater chamber (101,201,301,401,501,601,701,801).
摘要:
An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.
摘要:
A method and an apparatus for cleaning a substrate are provided. The substrate (1010) comprises features (4034) of patterned structures. The method comprises placing the substrate on a substrate holder (1014) configured to rotate the substrate; applying cleaning liquid (1032) on the substrate; rotating the substrate by the substrate holder at a first rate when acoustic energy is being applied to the cleaning liquid by a transducer (1004); and rotating the substrate by the substrate holder at a second rate higher than the first rate when acoustic energy is not being applied to the cleaning liquid by the transducer.
摘要:
A system for controlling damages in cleaning a semiconductor wafer (1010) comprising features of patterned structures, comprising: a wafer chuck (1014) for temporary restraining a semiconductor wafer (1010) during a cleaning process; a nozzle (1012) for delivering a cleaning liquid over a surface of the semiconductor wafer (1010); a sonic generator (25082) configured to alternately operate at a first frequency (f 1 ) and a first power level (P 1 ) for a first predetermined period of time (τ 1 ) and at a second frequency (f2) and a second power level (P2) for a second predetermined period of time (τ 2 ), to impart sonic energy to the cleaning liquid, wherein the first predetermined period of time (τ 1 ) and the second predetermined period of time (τ 2 ) consecutively follows one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.
摘要:
An apparatus and a method for removing a film on edge of backside of a wafer. The apparatus includes a vacuum chuck (110) having an inner groove (111) and an outer groove (1113) defined at the peripheral edge of the vacuum chuck (110), an inner sealing ring (1115) disposed in the inner groove (111); and an outer sealing ring (1116) disposed in the outer groove (1113). When the wafer is put on the vacuum chuck (110), the space defined by the wafer and the area of the vacuum chuck (110) encircled by the inner sealing ring (1115) is vacuumized for holding and positioning the wafer on the vacuum chuck (110), and the space defined by the wafer and the area between the inner sealing ring (1115) and the outer sealing ring (1116) of the vacuum chuck (110) is filled with pressurized gas for making the space defined by the wafer and the area between the inner sealing ring (1115)and the outer sealing ring (1116) of the vacuum chuck (110) maintain positive pressure for preventing liquid from getting into the center area of the backside of the wafer.
摘要:
An apparatus and method for detecting position of a wafer on a chuck are disclosed. The apparatus includes a camera (6) and an image processor (100) which includes a transforming unit (101), a comparing unit (103) and a determining unit (104). The method includes the following steps: taking an image of edge of the wafer and send image data to the image processor (S23); transforming the image data into image pixels and comparing the image pixels with reference pixels (S25'), and determining whether the wafer is in position on the chuck (S26).
摘要:
A method for cleaning a substrate without damaging a patterned structure on the substrate using an ultra/mega sonic device (1003), comprises: applying a liquid into a space between the substrate and the ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device (1003); after a micro jet generated by a bubble implosion and before said micro jet generated by the bubble implosion damaging the patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device (1003); after the temperature inside a bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.
摘要:
A method for cleaning semiconductor substrate (1010,2010) without damaging patterned structure on the semiconductor substrate (1010,2010) using ultra/mega sonic device (1003,2003) comprises applying liquid into a space between a substrate (1010,2010) and an ultra/mega sonic device (1003,2003); setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device (1003,2003); before bubble cavitation in the liquid damaging patterned structure on the substrate (1010,2010), setting the ultra/mega sonic power supply at zero output;after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again;detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply;comparing the detected power on time with a preset time τ1, or comparing the detected power off time with a preset time τ2, or comparing detected amplitude of each waveform with a preset value, if the detected power on time is longer than the preset time τ1, or the detected power off time is shorter than the preset time τ2, or the detected amplitude of any waveform is larger than the preset value, shut down the ultra/mega sonic power supply and send out an alarm signal.
摘要:
A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f 1 and power P 1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f 2 and power P 2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f 1 and power P 1 again; repeating above steps till the substrate being cleaned. Normally, if f 1 =f 2 , then P 2 is equal to zero or much less than P 1 ; if P 1 =P 2 , then f 2 is higher than f 1 ; if the f 1 2 , then, P 2 can be either equal or less than P 1 .