公开(公告)号：WO2022132578A1

公开(公告)日：2022-06-23

申请号：PCT/US2021/062773

申请日：2021-12-10

Applicant: APPLIED MATERIALS, INC.

Inventor： GAUTAM, Ribhu ,  JINDAL, Vibhu ,  MANOHARAN, Kamatchi Gobinath ,  BHAT, Sanjay ,  CHORAGUDI, Praveen Kumar ,  XIAO, Wen ,  RAMACHANDRAN, Vinodh

IPC: C23C14/34 ,  C23C14/56 ,  H01J37/34

Abstract: An ex situ physical vapor deposition (PVD) process kit conditioning apparatus configured to condition process kit components of a PVD substrate processing chamber, the ex situ PVD process kit conditioning apparatus comprising a chamber assembly, a central cathode assembly configured to mount one or more targets. The apparatus is configured to receive one or more components of a process kit of a PVD substrate processing chamber and the central cathode assembly is positioned and configured so that the apparatus deposits the defect reduction coating substantially uniformly on an inner surface of a process kit component of the PVD substrate processing chamber.

公开(公告)号：WO2022140147A1

公开(公告)日：2022-06-30

申请号：PCT/US2021/063754

申请日：2021-12-16

Applicant: APPLIED MATERIALS, INC.

Inventor： GAUTAM, Ribhu ,  JINDAL, Vibhu ,  BHAT, Sanjay ,  CHORAGUDI, Praveen Kumar ,  RAMACHANDRAN, Vinodh ,  RENGARAJ, Arun

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/687 ,  G03F1/22 ,  C23C14/56 ,  C23C14/58

Abstract: Substrate processing systems or platforms and methods configured to process substrates including of extreme ultraviolet (EUV) mask blanks are disclosed. Systems or platforms provide a small footprint, high throughput of substrates and minimize defect generation. The substrate processing system platform comprises a single central transfer chamber, a single transfer robot, a substrate flipping fixture, and processing chambers are positioned around the single central transfer chamber.

公开(公告)号：WO2019213109A1

公开(公告)日：2019-11-07

申请号：PCT/US2019/029957

申请日：2019-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： PATEL, Shashidhara ,  JUPUDI, Ananthkrishna ,  GAUTAM, Ribhu

IPC: H01L21/687 ,  H01L21/683

Abstract: Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to support a plurality of substrates in a vertically spaced apart relation; and a plurality of substrate lift elements interfacing with the plurality of substrate support elements and configured to simultaneously selectively raise or lower substrates off of or onto respective substrate support elements.

公开(公告)号：WO2020180412A1

公开(公告)日：2020-09-10

申请号：PCT/US2020/015085

申请日：2020-01-24

Applicant: APPLIED MATERIALS, INC.

Inventor： SHANTHAVEERASWAMY, Shreyas Patil ,  GAUTAM, Ribhu ,  NAGARAJAN, Kumaresan ,  SINGH, Vijay ,  CONSTANT, Andrew J. ,  KARAZIM, Michael P. ,  VELLORE, Kim Ramkumar

IPC: H01L21/677 ,  H01L21/67

Abstract: Embodiments of the present disclosure relate to a substrate transfer device having a contactless latch and contactless coupling providing the ability to lock and unlock the substrate transfer device at atmospheric and vacuum pressure with without particle generation at a base of the substrate transfer device, the contactless latch, and the contactless coupling. The substrate transfer device includes a lid having one or more lid grooves, a base having one or more base grooves, and a rotation member rotatably coupled to the lid. Each flange of one or more flanges of the substrate transfer device is rotatable in aligned lid grooves and base grooves, and each flange of the one or more flanges has an arm with a ferromagnetic material coupled thereto. The base is coupled to the lid when the ferromagnetic material of the arm is aligned and spaced from a magnetic material of a slot of the one or more base grooves.

公开(公告)号：WO2019204110A1

公开(公告)日：2019-10-24

申请号：PCT/US2019/026929

申请日：2019-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： RAO, Preetham P. ,  JUPUDI, Ananthkrishna ,  GAUTAM, Ribhu

IPC: H01J37/32

Abstract: Methods and apparatus for reducing leakage of microwaves at a slit valve of a process chamber. A multi-frequency resonant choke around the slit valve prevents microwave energy from a band of frequencies from escaping from the slit valve. The multi-frequency resonant choke may have a sloping bottom surface or a serrated bottom surface to enable multiple frequencies to resonant in the choke, canceling a range of microwave frequencies at gaps formed by a slit valve gate.

公开(公告)号：WO2021034354A1

公开(公告)日：2021-02-25

申请号：PCT/US2020/030741

申请日：2020-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： RAMACHANDRAN, Vinodh ,  JUPUDI, Ananthkrishna ,  TSAI, Cheng-Hsiung ,  OW, Yueh Sheng ,  RAO, Preetham P. ,  GAUTAM, Ribhu ,  AGARWAL, Prashant

IPC: H01L21/67 ,  G01J5/00

Abstract: Methods and apparatus for processing a substrate are provided. The apparatus, for example, can include a process chamber comprising a chamber body defining a processing volume and having a view port coupled to the chamber body; a substrate support disposed within the processing volume and having a support surface to support a substrate; and an infrared temperature sensor (IRTS) disposed outside the chamber body adjacent the view port to measure a temperature of the substrate when being processed in the processing volume, the IRTS movable relative to the view port for scanning the substrate through the view port.

公开(公告)号：WO2020242804A1

公开(公告)日：2020-12-03

申请号：PCT/US2020/033443

申请日：2020-05-18

Applicant: APPLIED MATERIALS, INC.

Inventor： GAUTAM, Ribhu ,  JUPUDI, Ananthkrishna ,  KOH, Tuck Foong ,  RAO, Preetham P. ,  RAMACHANDRAN, Vinodh ,  OW, Yueh Sheng ,  WADA, Yuichi ,  TSAI, Cheng-Hsiung ,  LIEW, Kai Liang

IPC: H01L21/67 ,  H05B6/64

Abstract: Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.

公开(公告)号：WO2021154557A1

公开(公告)日：2021-08-05

申请号：PCT/US2021/014109

申请日：2021-01-20

Applicant: APPLIED MATERIALS, INC.

Inventor： VARGHESE, Binni ,  GAUTAM, Ribhu

IPC: C23C14/34 ,  C23C14/56 ,  H01J37/34

Abstract: A physical vapor deposition chamber a first target comprising a bottom surface, a top surface, a cross-sectional thickness defining a first target cross-sectional thickness between the top surface and the bottom surface, a first end and a second end opposite the first end, the cross-sectional thickness at the first end being less than the cross-sectional thickness at the second end. Methods of processing a substrate are also provided.