公开(公告)号：WO2017091327A1

公开(公告)日：2017-06-01

申请号：PCT/US2016/059761

申请日：2016-10-31

Applicant: APPLIED MATERIALS, INC.

Inventor： LIU, Wei ,  CHUNG, Hua ,  LI, Xuebin ,  LU, Yuxiang

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/3065 ,  H01L21/20

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/02115 ,  H01L21/02236 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3083 ,  H01L29/66795

Abstract: Methods for forming semiconductor devices, such as FinFET devices, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets and a bottom surface including two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed by an isotropic plasma etch process. The isotropic plasma etch process may be performed at a pressure ranging from about 5 mTorr to about 200 mTorr in order to maximize the amount of radicals while minimizing the amount of ions in the plasma. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.

Abstract translation: 提供了用于形成诸如FinFET器件的半导体器件的方法。 在半导体鳍上形成外延膜，并且外延膜包括具有两个小平面的顶表面和包括两个小平面的底表面。 在顶面上沉积盖层，并通过各向同性等离子体蚀刻工艺去除横向方向上的部分外延膜。 各向同性等离子体蚀刻工艺可以在约5mTorr至约200mTorr的压力下执行，以便使自由基的量最大化，同时最小化等离子体中的离子量。 具有较小的横向尺寸防止外延膜与相邻的外延膜合并并在外延膜和相邻的外延膜之间产生间隙。