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    DUAL PLASMA SOURCE, LAMP HEATED PLASMA CHAMBER
    3.
    发明申请
    DUAL PLASMA SOURCE, LAMP HEATED PLASMA CHAMBER 审中-公开
    双等离子体源，灯加热等离子体室

    公开(公告)号：WO2012118520A1

    公开(公告)日：2012-09-07

    申请号：PCT/US2011/046000

    申请日：2011-07-29

    Applicant: APPLIED MATERIALS, INC. ,  OLSEN, Christopher S. ,  LAI, Canfeng ,  RAMAMURTHY, Sundar ,  SWENBERG, Johanes ,  LIU, Wei

    Inventor： OLSEN, Christopher S. ,  LAI, Canfeng ,  RAMAMURTHY, Sundar ,  SWENBERG, Johanes ,  LIU, Wei

    IPC: H01L21/316 ,  H01L21/205

    CPC classification number: C23C16/517 ,  H01J37/32082 ,  H01J37/32357

    Abstract: Methods and apparatus for processing semiconductor substrates are described. A processing chamber includes a substrate support with an in-situ plasma source, which may be an inductive, capacitive, microwave, or millimeter wave source, facing the substrate support and a radiant heat source, which may be a bank of thermal lamps, spaced apart from the substrate support. The support may be between the in-situ plasma source and the radiant heat source, and may rotate. A method or processing a substrate includes forming an oxide layer by exposing the substrate to a plasma generated in a process chamber, performing a plasma nitridation process on the substrate in the chamber, thermally treating the substrate using a radiant heat source disposed in the chamber while exposing the substrate to oxygen radicals formed outside the chamber, and forming an electrode by exposing the substrate to a plasma generated in the chamber.

    Abstract translation: 描述了用于处理半导体衬底的方法和设备。 处理室包括具有原位等离子体源的衬底支撑件，其可以是面向衬底支撑件的电感，电容，微波或毫米波源，辐射热源可以是一排热灯，间隔开 除了基板支撑。 支撑件可以在原位等离子体源和辐射热源之间，并且可以旋转。 一种方法或处理衬底包括通过将衬底暴露于在处理室中产生的等离子体来形成氧化物层，在腔室中的衬底上进行等离子体氮化处理，使用设置在腔室中的辐射热源热处理衬底，同时 将衬底暴露于室外形成的氧自由基，并通过将衬底暴露于腔室中产生的等离子体而形成电极。

    DUAL ZONE GAS INJECTION NOZZLE
    4.
    发明申请
    DUAL ZONE GAS INJECTION NOZZLE 审中-公开
    双区气体喷射喷嘴

    公开(公告)号：WO2009085810A1

    公开(公告)日：2009-07-09

    申请号：PCT/US2008/087139

    申请日：2008-12-17

    Applicant: APPLIED MATERIALS, INC. ,  LIU, Wei ,  SWENBERG, Johanes S. ,  NGUYEN, Hanh D. ,  NGUYEN, Son T. ,  CURTIS, Roger ,  BOTTINI, Philip A.

    Inventor： LIU, Wei ,  SWENBERG, Johanes S. ,  NGUYEN, Hanh D. ,  NGUYEN, Son T. ,  CURTIS, Roger ,  BOTTINI, Philip A.

    IPC: H01L21/02

    CPC classification number: H01J37/3244 ,  H01J37/32449

    Abstract: The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.

    Abstract translation: 本发明总体上提供了用于处理衬底的装置和方法。 特别地，本发明提供了获得处理气体的期望分布的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中， 第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口 ，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

    METHOD OF CORRECTING BASELINE SKEW BY A NOVEL MOTORIZED SOURCE COIL ASSEMBLY
    5.
    发明申请
    METHOD OF CORRECTING BASELINE SKEW BY A NOVEL MOTORIZED SOURCE COIL ASSEMBLY 审中-公开
    通过新型电动机线圈组件校正基线的方法

    公开(公告)号：WO2009085708A1

    公开(公告)日：2009-07-09

    申请号：PCT/US2008/086881

    申请日：2008-12-15

    Applicant: APPLIED MATERIALS, INC. ,  LIU, Wei ,  SWENBERG, Johanes, F. ,  NGUYEN, Hanh, D. ,  NGUYEN, Son, T. ,  CURTIS, Roger ,  BOTTINI, Philip, A.

    Inventor： LIU, Wei ,  SWENBERG, Johanes, F. ,  NGUYEN, Hanh, D. ,  NGUYEN, Son, T. ,  CURTIS, Roger ,  BOTTINI, Philip, A.

    IPC: H01L21/02

    CPC classification number: H01J37/321 ,  H01J37/3211 ,  H01J37/32174

    Abstract: The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.

    Abstract translation: 本发明通常提供了用于调整电感耦合等离子体室中的等离子体密度分布的装置和方法。 本发明的一个实施例提供一种被配置用于处理衬底的装置。 该装置包括限定被配置成在其中处理衬底的处理体积的室主体和耦合到处理体积外的室主体的线圈组件，其中线圈组件包括线圈安装板，安装在线圈安装件上的第一线圈天线 板和线圈调整机构，被配置为调节第一线圈天线相对于处理体积的对准。

    METHOD FOR FABRICATING AN ULTRA SHALLOW JUNCTION OF A FIELD EFFECT TRANSISTOR
    6.
    发明申请
    METHOD FOR FABRICATING AN ULTRA SHALLOW JUNCTION OF A FIELD EFFECT TRANSISTOR 审中-公开
    制造场效应晶体管超浅层结的方法

    公开(公告)号：WO2004006303A2

    公开(公告)日：2004-01-15

    申请号：PCT/US2003/021370

    申请日：2003-07-01

    Applicant: APPLIED MATERIALS, INC.

    Inventor： LIU, Wei ,  MUI, David, S., L. ,  SCUDDER, Lance, A. ,  COMITA, Paul, B. ,  SAMOILOV, Arkadii, V. ,  ADIBI, Babak

    IPC: H01L

    CPC classification number: H01L29/6659 ,  H01L29/41766 ,  H01L29/66628 ,  H01L29/66636

    Abstract: A method of fabricating an ultra shallow junction of a field effect transistor is provided. The method includes the steps of etching a substrate near a gate structure to define a source region and a drain region of the transistor, forming a spacer/protective film having poor step coverage to protect frontal surfaces of the source and drain regions, laterally etching sidewalls of the regions beneath a gate dielectric to define a channel region, and removing the protective film.

    Abstract translation: 提供了一种制造场效应晶体管的超浅结的方法。 该方法包括以下步骤：在栅极结构附近蚀刻衬底以限定晶体管的源极区域和漏极区域;形成具有差的阶梯覆盖度的间隔件/保护膜以保护源极和漏极区域的正面;横向蚀刻侧壁 栅极电介质下方的区域以限定沟道区域，并去除保护膜。

    OXYGEN RADICAL ASSISTED DIELECTRIC FILM DENSIFICATION
    7.
    发明申请
    OXYGEN RADICAL ASSISTED DIELECTRIC FILM DENSIFICATION 审中-公开

    公开(公告)号：WO2021118815A1

    公开(公告)日：2021-06-17

    申请号：PCT/US2020/062540

    申请日：2020-11-30

    Applicant: APPLIED MATERIALS, INC.

    Inventor： SHARMA, Shashank ,  LIU, Wei ,  SUN, Yong ,  JHA, Praket Prakash

    IPC: H01L21/02 ,  H01J37/32 ,  H01L21/67

    Abstract: Embodiments herein provide for oxygen radical based treatment of silicon containing material layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen radical based treatment of the FCVD deposited silicon containing material layers desirably increases the number of stable Si--O bonds, removes undesirably hydrogen and nitrogen impurities, and provides for further densification and excellent film quality in the treated silicon containing material layers. Embodiments include methods and apparatus for making a semiconductor device including: contacting a flowable layer of silicon containing material disposed on a substrate with a plurality of oxygen radicals under conditions sufficient to anneal and increase the density of the flowable layer of silicon containing material.

    METHOD FOR MODIFYING EPITAXIAL GROWTH SHAPE
    10.
    发明申请
    METHOD FOR MODIFYING EPITAXIAL GROWTH SHAPE 审中-公开
    改善外延生长形状的方法

    公开(公告)号：WO2017091327A1

    公开(公告)日：2017-06-01

    申请号：PCT/US2016/059761

    申请日：2016-10-31

    Applicant: APPLIED MATERIALS, INC.

    Inventor： LIU, Wei ,  CHUNG, Hua ,  LI, Xuebin ,  LU, Yuxiang

    IPC: H01L29/66 ,  H01L29/78 ,  H01L21/3065 ,  H01L21/20

    CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/02115 ,  H01L21/02236 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3083 ,  H01L29/66795

    Abstract: Methods for forming semiconductor devices, such as FinFET devices, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets and a bottom surface including two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed by an isotropic plasma etch process. The isotropic plasma etch process may be performed at a pressure ranging from about 5 mTorr to about 200 mTorr in order to maximize the amount of radicals while minimizing the amount of ions in the plasma. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.

    Abstract translation: 提供了用于形成诸如FinFET器件的半导体器件的方法。 在半导体鳍上形成外延膜，并且外延膜包括具有两个小平面的顶表面和包括两个小平面的底表面。 在顶面上沉积盖层，并通过各向同性等离子体蚀刻工艺去除横向方向上的部分外延膜。 各向同性等离子体蚀刻工艺可以在约5mTorr至约200mTorr的压力下执行，以便使自由基的量最大化，同时最小化等离子体中的离子量。 具有较小的横向尺寸防止外延膜与相邻的外延膜合并并在外延膜和相邻的外延膜之间产生间隙。

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