HYDROGEN PLASMA BASED CLEANING PROCESS FOR ETCH HARDWARE
    2.
    发明申请
    HYDROGEN PLASMA BASED CLEANING PROCESS FOR ETCH HARDWARE 审中-公开
    基于氢等离子体的硬质合金清洗工艺

    公开(公告)号:WO2017123423A1

    公开(公告)日:2017-07-20

    申请号:PCT/US2016/069204

    申请日:2016-12-29

    Abstract: The present disclosure provides methods for cleaning chamber components post substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor and delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.

    Abstract translation: 本公开提供了用于在衬底蚀刻之后清洁腔室组件的方法。 在一个实例中,用于清洁的方法包括使用等离子体激活蚀刻气体混合物以产生活化的蚀刻气体混合物,蚀刻气体混合物包含含氢前体和含氟前体,并将活化的蚀刻气体混合物输送到处理 所述处理室具有定位在其中的边缘环,所述边缘环包含催化剂和抗催化材料,其中所述活化气体从所述边缘环移除所述抗催化材料。

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