SCANNED ANGLED ETCHING APPARATUS AND TECHNIQUES PROVIDING SEPARATE CO-LINEAR RADICALS AND IONS

    公开(公告)号:WO2020131403A1

    公开(公告)日:2020-06-25

    申请号:PCT/US2019/064684

    申请日:2019-12-05

    Abstract: A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.

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