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    INTEGRATION OF CLUSTER MOCVD AND HVPE REACTORS WITH OTHER PROCESS CHAMBERS
    1.
    发明申请
    INTEGRATION OF CLUSTER MOCVD AND HVPE REACTORS WITH OTHER PROCESS CHAMBERS 审中-公开
    集成MOCVD和HVPE反应器与其他过程池的集成

    公开(公告)号：WO2012044704A3

    公开(公告)日：2012-06-14

    申请号：PCT/US2011053749

    申请日：2011-09-28

    Applicant: APPLIED MATERIALS INC ,  CUI JIE ,  BOUR DAVID ,  CHEN LIANG-YUH

    Inventor： CUI JIE ,  BOUR DAVID ,  CHEN LIANG-YUH

    IPC: H01L21/205 ,  H01L33/00

    CPC classification number: H01L33/42 ,  C30B25/02 ,  C30B29/406 ,  C30B35/005 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68771 ,  H01L2933/0016

    Abstract: The integration of cluster metal-organic chemical vapor deposition (MOCVD) and hydride vapor phase epitaxy (HVPE) reactors with other process chambers is described. For example, a method of fabricating a light-emitting diode (LED) structure described herein includes forming, in a first chamber of a cluster tool, a P-type group III-V material layer above a substrate. Without removing the substrate from the cluster tool a metal contact layer is formed directly on the P-type group III-V material layer in a second chamber of the cluster tool.

    Abstract translation: 描述了集群金属 - 有机化学气相沉积（MOCVD）和氢化物气相外延（HVPE）反应器与其他处理室的集成。 例如，制造本文所述的发光二极管（LED）结构的方法包括在簇工具的第一室中形成在基板上方的P型III-V族材料层。 在不从簇工具移除衬底的情况下，在簇工具的第二室中，直接在P型III-V族材料层上形成金属接触层。

    METHOD FOR ELECTROCHEMICALLY POLISHING A CONDUCTIVE MATERIAL ON A SUBSTRATE
    2.
    发明申请
    METHOD FOR ELECTROCHEMICALLY POLISHING A CONDUCTIVE MATERIAL ON A SUBSTRATE 审中-公开
    在基板上电化学抛光导电材料的方法

    公开(公告)号：WO2007095421A2

    公开(公告)日：2007-08-23

    申请号：PCT/US2007061401

    申请日：2007-01-31

    Applicant: APPLIED MATERIALS INC ,  DU TIANBO ,  LIU FENG Q ,  DUBOUST ALAIN ,  HSU WEI-YUNG ,  CHEN LIANG-YUH

    Inventor： DU TIANBO ,  LIU FENG Q ,  DUBOUST ALAIN ,  HSU WEI-YUNG ,  CHEN LIANG-YUH

    IPC: B24B37/04

    CPC classification number: B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  H01L21/32125

    Abstract: Methods are provided for removing conductive materials from a substrate surface. In one aspect, a method includes providing a substrate comprising dielectric feature definitions formed between substrate field regions, a barrier material disposed in the feature definitions and on the substrate field regions, and a conductive material disposed on the barrier material, polishing the substrate to substantially remove a bulk portion of the conductive material with a direct current bias, and polishing the substrate to remove a residual portion of the conductive material with a pulse bias.

    Abstract translation: 提供了从衬底表面去除导电材料的方法。 在一个方面，一种方法包括提供包括在衬底场区域之间形成的介电特征定义的衬底，设置在特征定义中的衬底场区域上的阻挡材料和设置在阻挡材料上的导电材料， 以直流偏压去除导电材料的主体部分，并抛光衬底以用脉冲偏压去除导电材料的剩余部分。

    INTEGRATED MUTLI-STEP GAP FILL AND ALL FEATURE PLANARIZATION FOR CONDUCTIVE MATERIALS
    7.
    发明申请
    INTEGRATED MUTLI-STEP GAP FILL AND ALL FEATURE PLANARIZATION FOR CONDUCTIVE MATERIALS 审中-公开
    集成的MUTLI-STEP GAP填充和所有导电材料的特征平面化

    公开(公告)号：WO0250336A3

    公开(公告)日：2005-01-06

    申请号：PCT/US0146449

    申请日：2001-12-03

    Applicant: APPLIED MATERIALS INC

    Inventor： HSU WEI-YUNG ,  CHEN LIANG-YUH ,  MORAD RATSON ,  CARL DANIEL A ,  SOMEKH SASSON

    IPC: B24B37/00 ,  B24B37/04 ,  C25D5/00 ,  C25D5/22 ,  C25D7/12 ,  H01L21/288 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768 ,  C23C18/16 ,  C25D5/02

    CPC classification number: C25D7/123 ,  C25D5/06 ,  C25D5/22 ,  C25D17/001 ,  C25D17/008 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877

    Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate. During the deposition, the partial enclosure and the substrate are rotated relative one another.

    Abstract translation: 提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。 在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。 衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。 部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。 在另一方面，提供了一种方法，其中将基板定位在其中具有电解质的部分封闭体中，其中离开可渗透盘离第一距离。 任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。 接下来，将基板定位成更靠近可渗透盘，并且在基板上沉积第二厚度。 在沉积期间，部分封闭物和基底相对彼此旋转。

    PLANARIZATION OF SUBSTRATES USING ELECTROCHEMICAL MECHANICAL POLISHING
    8.
    发明申请
    PLANARIZATION OF SUBSTRATES USING ELECTROCHEMICAL MECHANICAL POLISHING 审中-公开
    使用电化学机械抛光的基板平面化

    公开(公告)号：WO02075804A3

    公开(公告)日：2003-06-26

    申请号：PCT/US0204806

    申请日：2002-02-19

    Applicant: APPLIED MATERIALS INC

    Inventor： CHEN LIANG-YUH ,  HSU WEI-YUNG ,  DUBOUST ALAIN ,  MORAD RATSON ,  CARL DANIEL A ,  SOMEKH SASSON ,  MAYDAN DAN

    IPC: B24B37/00 ,  B23H5/08 ,  B24B37/04 ,  H01L21/304 ,  H01L21/316 ,  H01L21/321

    CPC classification number: B23H5/08

    Abstract: A method and apparatus are provided for planarizing a material layer on a substrate. In one aspect, a method is provided for processing a substrate including forming a passivation layer on a substrate surface, polishing the substrate in an electrolyte solution, applying an anodic bias to the substrate surface, and removing material from at least a portion of the substrate surface. In another aspect, an apparatus is provided which includes a partial enclosure, polishing article, a cathode, a power source, a substrate carrier movably disposed above the polishing article, and a computer based controller to position a substrate in an electrolyte solution to form a passivation layer on a substrate surface, to polish the substrate in the electrolyte solution with the polishing article, and to apply an anodic bias to the substrate surface or polishing article to remove material from at least a portion of the substrate surface.

    Abstract translation: 提供了一种用于平坦化衬底上的材料层的方法和装置。 在一个方面，提供一种用于处理衬底的方法，包括在衬底表面上形成钝化层，在电解质溶液中抛光衬底，向衬底表面施加阳极偏压，以及从衬底的至少一部分去除材料 表面。 在另一方面，提供了一种装置，其包括部分外壳，抛光制品，阴极，电源，可移动地设置在抛光制品上方的基板载体，以及基于计算机的控制器，以将基板定位在电解质溶液中以形成 在衬底表面上的钝化层，用抛光制品抛光电解质溶液中的衬底，并将阳极偏压施加到衬底表面或抛光制品上以从衬底表面的至少一部分去除材料。

    EPITAXIAL GROWTH TEMPERATURE CONTROL IN LED MANUFACTURE
    9.
    发明申请
    EPITAXIAL GROWTH TEMPERATURE CONTROL IN LED MANUFACTURE 审中-公开
    LED制造中的外延生长温度控制

    公开(公告)号：WO2012037376A3

    公开(公告)日：2012-06-28

    申请号：PCT/US2011051801

    申请日：2011-09-15

    Applicant: APPLIED MATERIALS INC ,  HSU WEI-YUNG ,  DUBOUST ALAIN ,  CHUNG HUA ,  CHEN LIANG-YUH ,  OLGADO DONALD J K

    Inventor： HSU WEI-YUNG ,  DUBOUST ALAIN ,  CHUNG HUA ,  CHEN LIANG-YUH ,  OLGADO DONALD J K

    IPC: H01L21/20 ,  H01L21/205 ,  H01L33/00

    CPC classification number: C23C16/52 ,  C30B25/10 ,  C30B25/16 ,  H01L21/67248 ,  H01L33/007

    Abstract: Apparatus and method for control of epitaxial growth temperatures during manufacture of light emitting diodes (LEDs). Embodiments include measurement of a substrate and/or carrier temperature during a recipe stabilization period; determination of a temperature drift based on the measurement; and modification of a growth temperature based on a temperature offset determined in response to the temperature drift exceeding a threshold criteria. In an embodiment, a statistic derived from a plurality of pyrometric measurements made during the recipe stabilization over several runs is employed to offset each of a set of growth temperatures utilized to form a multiple quantum well (MQW) structure.

    Abstract translation: 用于在制造发光二极管（LED）期间控制外延生长温度的装置和方法。 实施例包括在食谱稳定期间测量基底和/或载体温度; 基于测量确定温度漂移; 以及基于响应于温度漂移确定的温度偏移超过阈值标准来修改生长温度。 在一个实施例中，采用在多次运行中的配方稳定期间进行的多个高温测量得到的统计量来抵消用于形成多量子阱（MQW）结构的一组生长温度中的每一个。

    GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE
    10.
    发明申请
    GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE 审中-公开
    具有高发射表面的气体分配喷头

    公开(公告)号：WO2012027009A3

    公开(公告)日：2012-04-19

    申请号：PCT/US2011039857

    申请日：2011-06-09

    Applicant: APPLIED MATERIALS INC ,  HANAWA HIROJI ,  MAUNG KYAWWIN ,  CHUNG HUA ,  CUI JIE ,  BOUR DAVID ,  HSU WEI-YUNG ,  CHEN LIANG-YUH

    Inventor： HANAWA HIROJI ,  MAUNG KYAWWIN ,  CHUNG HUA ,  CUI JIE ,  BOUR DAVID ,  HSU WEI-YUNG ,  CHEN LIANG-YUH

    IPC: H01L21/205

    CPC classification number: C23C16/45565 ,  C23C16/45574 ,  C23C16/481 ,  C23C16/52

    Abstract: Embodiments of the present invention provide methods and apparatus for surface coatings applied to process chamber components utilized in chemical vapor deposition processes. In one embodiment, the apparatus provides a showerhead apparatus comprising a body, a plurality of conduits extending through the body, each of the plurality of conduits having an opening extending to a processing surface of the body, and a coating disposed on the processing surface, the coating being about 50 microns to about 200 microns thick and comprising a coefficient of emissivity of about 0.8, an average surface roughness of about 180 micro-inches to about 220 micro-inches, and a porosity of about 15% or less.

    Abstract translation: 本发明的实施例提供了用于化学气相沉积工艺中使用的处理室部件的表面涂层的方法和装置。 在一个实施例中，该装置提供一种喷头装置，该喷头装置包括本体，延伸穿过本体的多个导管，多个导管中的每一个具有延伸至本体的处理表面的开口以及设置在处理表面上的涂层， 所述涂层的厚度为约50微米至约200微米，并且包括约0.8的发射率系数，约180微英寸至约220微英寸的平均表面粗糙度以及约15％或更小的孔隙率。

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