公开(公告)号：WO2021032376A1

公开(公告)日：2021-02-25

申请号：PCT/EP2020/070151

申请日：2020-07-16

Applicant: ASML NETHERLANDS B.V.

Inventor： HAUPTMANN, Marc ,  LAMBREGTS, Cornelis, Johannes, Henricus ,  ISMAIL, Amir, Bin ,  RAHMAN, Rizvi ,  BOUSTHEEN, Allwyn ,  PISHKARI, Raheleh ,  MOS, Everhardus, Cornelis ,  VIATKINA, Ekaterina, Mikhailovna ,  WERKMAN, Roy ,  BRINKHOF, Ralph

IPC: G03F7/20

Abstract: A method of controlling a semiconductor manufacturing process, the method comprising: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at leastone additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.

公开(公告)号：WO2018197143A1

公开(公告)日：2018-11-01

申请号：PCT/EP2018/057926

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： HAUPTMANN, Marc ,  MOS, Everhardus, Cornelis ,  KOU, Weitian ,  YPMA, Alexander ,  KUPERS, Michiel ,  YU, Hyun-Woo ,  HAN, Min-Sub

IPC: G03F7/20 ,  G05B19/418

CPC classification number: G03F7/70633 ,  G03F7/70525 ,  G05B19/41875

Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

公开(公告)号：WO2018072980A1

公开(公告)日：2018-04-26

申请号：PCT/EP2017/074643

申请日：2017-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： KOU, Weitian ,  YPMA, Alexander ,  HAUPTMANN, Marc ,  KUPERS, Michiel ,  VERGAIJ-HUIZER, Lydia, Marianna ,  WALLERBOS, Erik, Johannes, Maria ,  DELVIGNE, Erik, Henri, Adriaan ,  ROELOFS, Willem, Seine, Christian ,  CEKLI, Hakki, Ergun ,  VAN DER SANDEN, Stefan, Cornelis, Theodorus ,  GROUWSTRA, Cédric, Désiré ,  DECKERS, David, Frans, Simon ,  GIOLLO, Manuel ,  DOVBUSH, Iryna

IPC: G03F7/70 ,  G03F7/20

Abstract: Disclosed is a method of determining a correction for a process parameter related to a lithographic process on a substrate and associated apparatuses. The lithographic process comprises a plurality of runs during each one of which a pattern is applied to one or more substrates. The method comprises obtaining pre-exposure metrology data describing a property of the substrate; obtaining post- exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning to the substrate, a group membership status from a one or more groups, based on said pre-exposure metrology data; and determining the correction for the process parameter based on said group membership status and said post-exposure metrology data.

Abstract translation: 公开了一种确定与衬底和相关装置上的光刻过程有关的过程参数的校正的方法。 光刻过程包括在其中每一个过程中将图案施加到一个或多个衬底的多次运行。 该方法包括获得描述衬底特性的预曝光度量数据; 获得曝光后测量数据，所述曝光后测量数据包括已经在一个或多个先前曝光的基板上执行的所述过程参数的一个或多个测量值; 基于所述预曝光度量数据向所述衬底分配来自一个或多个组的组成员身份状态; 以及基于所述组成员状态和所述曝光后测量数据确定对所述过程参数的校正。

公开(公告)号：WO2022189082A1

公开(公告)日：2022-09-15

申请号：PCT/EP2022/052892

申请日：2022-02-07

Applicant: ASML NETHERLANDS B.V.

Inventor： KLEIN KOERKAMP, Niek, Willem ,  HAUPTMANN, Marc ,  KEYVANI JANBAHAN, Aliasghar ,  WANG, Jingchao

IPC: G03F7/20 ,  G03F9/00

Abstract: Methods and apparatus for characterizing a semiconductor manufacturing process performed on a substrate. First data is obtained associated with fingerprint data of the substrate measured after a first process step. Second data is obtained associated with fingerprint data of the substrate measured after a second processing step. A statistical model is used to decompose the first and second data into a first class of fingerprint components mutually correlating between the first and second data and a second class of fingerprint components not mutually correlating between the first and second data. At least one of the first class fingerprint of components and the second class of fingerprint components are used to characterize the semiconductor manufacturing process.

公开(公告)号：WO2020212068A1

公开(公告)日：2020-10-22

申请号：PCT/EP2020/057687

申请日：2020-03-19

Applicant: ASML NETHERLANDS B.V.

Inventor： HAUPTMANN, Marc ,  ISMAIL, Amir, Bin ,  RAHMAN, Rizvi ,  LI, Jiapeng

IPC: G03F7/20 ,  G05B19/418 ,  H01L21/66

Abstract: There is disclosed a method for generating a sampling scheme for a device manufacturing process, the method comprising: obtaining a measurement data time series of a plurality of processed substrates; transforming the measurement data time series to obtain frequency domain data; determining, using the frequency domain data, a temporal sampling scheme; determining an error offset introduced by the temporal sampling scheme on the basis of measurements on substrates performed according to the temporal sampling scheme; and determining an improved temporal sampling scheme to compensate said error offset.

公开(公告)号：WO2018072962A1

公开(公告)日：2018-04-26

申请号：PCT/EP2017/073868

申请日：2017-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： KOU, Weitian ,  YPMA, Alexander ,  HAUPTMANN, Marc ,  KUPERS, Michiel ,  HAN, Min-Sub

IPC: G05B19/418

Abstract: A lithographic process is performed on a plurality of semiconductor wafers (900; 1020). The method includes selecting one or more of the wafers as sample wafers (910-914; 1030-1034). Metrology steps (922; 1042) are performed only on the selected sample wafers. Based on metrology results (924; 046) of the selected sample product units corrections are defined for use in controlling processing of the wafers or future wafers. The selection of sample product units is based at least partly on statistical analysis of object data (902; 1006) measured in relation to the wafers. The same object data or other data can be used for grouping wafers into groups. Selecting of sample wafers can include selecting wafers (910-914; 1030-1034) that are identified by said statistical analysis as most representative of the wafers in their group. The selecting of sample wafers can include elimination of product units (916; 036) that are identified as unrepresentative.

Abstract translation: 在多个半导体晶片（900; 1020）上执行光刻工艺。 该方法包括选择一个或多个晶片作为样品晶片（910-914; 1030-1034）。 度量步骤（922; 1042）仅在所选样品晶圆上执行。 基于所选择的样品产品单元的计量结果（924; 046），定义校正用于控制晶片或未来晶片的处理。 样本产品单元的选择至少部分基于对晶片测量的对象数据（902; 1006）的统计分析。 可以使用相同的对象数据或其他数据将晶圆分组成组。 选择样本晶片可以包括选择由所述统计分析确定为最具代表性的晶片组的晶片（910-914; 1030-1034）。 选择样品晶片可以包括消除被确定为不具代表性的产品单元（916; 036）。

公开(公告)号：WO2016087069A1

公开(公告)日：2016-06-09

申请号：PCT/EP2015/071600

申请日：2015-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： HAUPTMANN, Marc ,  DAVIES, Dylan,John,David ,  JANSSEN, Paul ,  TSUGAMA, Naoko ,  BRULS, Richard, Joseph ,  HOEKERD, Kornelis, Tijmen ,  JANSSEN, Edwin, Johannes, Maria ,  VAN DEN OEVER, Petrus, Johannes ,  VAN DER WILK, Ronald ,  VAN SCHIJNDEL, Antonius, Hubertus ,  VIEYRA SALAS, Jorge, Alberto

IPC: G03F7/20 ,  G03F1/84 ,  G01N21/95 ,  H01L21/66 ,  H01L21/67

CPC classification number: G03F7/70616 ,  G01N21/9501 ,  G01N27/61 ,  G01N2021/95676 ,  G03F1/84 ,  G03F7/70508 ,  G03F7/70783 ,  H01L22/12 ,  H01L22/20

Abstract: A diagnostic apparatus monitors a lithographic manufacturing system. First measurement data representing local deviations of some characteristic across a substrate is obtained using sensors (202) within a lithographic apparatus, and/or a separate metrology tool (240). Other inspections tools (244, 248) perform wafer backside inspection to produce second measurement data (302). High- resolution backside defect image is processed into a form in which it can be compared with lower resolution information from the first measurement data. Cross-correlation is performed (CORR) to identify which of the observed defects are correlated spatially with the deviations represented in the first measurement data. A correlation map (506) is used to identify potentially relevant clusters of defects in the more detailed original defect map (520). The responsible apparatus can be identified by pattern recognition (PREC) as part of automated root cause analysis, alternatively, reticle inspection data may be used as second measurement data (302).

Abstract translation: 诊断装置监视光刻制造系统。 使用光刻设备内的传感器（202）和/或单独的计量工具（240）获得表示跨越衬底的某些特性的局部偏差的第一测量数据。 其他检查工具（244,248）执行晶片背面检查以产生第二测量数据（302）。 将高分辨率背面缺陷图像处理成可与第一测量数据中的较低分辨率信息进行比较的形式。 执行互相关（CORR）以识别哪些观察到的缺陷在空间上与第一测量数据中表示的偏差相关联。 相关图（506）用于在更详细的原始缺陷图（520）中识别潜在相关的缺陷簇。 负责的设备可以通过模式识别（PREC）来识别，作为自动根本原因分析的一部分，或者，掩模版检查数据可以用作第二测量数据（302）。