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    METROLOGY METHOD, METROLOGY APPARATUS AND LITHOGRAPHIC APPARATUS
    3.
    发明申请
    METROLOGY METHOD, METROLOGY APPARATUS AND LITHOGRAPHIC APPARATUS 审中-公开

    公开(公告)号：WO2021249711A1

    公开(公告)日：2021-12-16

    申请号：PCT/EP2021/062487

    申请日：2021-05-11

    Applicant: ASML NETHERLANDS B.V.

    Inventor： GOORDEN, Sebastianus, Adrianus ,  HUISMAN, Simon, Reinald ,  PELLEMANS, Henricus, Petrus, Maria ,  ALPEGGIANI, Filippo ,  BRINKHOF, Ralph

    IPC: G03F7/20 ,  G03F9/00 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7046 ,  G03F9/7092

    Abstract: Disclosed is method of determining a position value relating to at least one target, and associated apparatuses. The method comprises obtaining measurement data relating to measurement of at least one target; wherein the measurement data comprises at least two parameter distributions which each describe variation of a parameter value over at least part of said target, and where said at least two parameter distributions comprises at least one position distribution which describes variation of said position value over at least part of said target. The method further comprises determining a weighting factor for at least one of said at least two parameter distributions and a corresponding weighted position distribution, wherein the weighting factor(s) minimizes a variation metric in the weighted position distribution, and said weighted position distribution comprises a combination of said at least two parameter distributions subject to said weighting factor(s).

    A METHOD FOR MODELING MEASUREMENT DATA OVER A SUBSTRATE AREA AND ASSOCIATED APPARATUSES
    5.
    发明申请
    A METHOD FOR MODELING MEASUREMENT DATA OVER A SUBSTRATE AREA AND ASSOCIATED APPARATUSES 审中-公开

    公开(公告)号：WO2023016791A1

    公开(公告)日：2023-02-16

    申请号：PCT/EP2022/070828

    申请日：2022-07-25

    Applicant: ASML NETHERLANDS B.V.

    Inventor： TEN HAAF, Gijs ,  MOS, Everhardus, Cornelis ,  KATTOUW, Hans, Erik ,  BRINKHOF, Ralph

    IPC: G03F7/20

    Abstract: Disclosed is a method for determining a process correction for at least a first process of a lithographic process, comprising at least the first process performed on at least a first substrate using at least a first apparatus and a second process performed on at least said first substrate using at least a second apparatus, where a correction actuation capability of the first apparatus differs from the second apparatus, comprising: obtaining metrology data relating to said first substrate; modeling said metrology data using a first model, the model being related to said first apparatus; and controlling said first process based on the modeled metrology data; the modeling step and/or an additional processing step comprises distributing a penalty in a performance parameter across said first process and said second process such that the distributed penalties in the performance parameter are within their respective specifications of the performance parameter.

    METHOD OF MEASURING AN ALIGNMENT MARK OR AN ALIGNMENT MARK ASSEMBLY, ALIGNMENT SYSTEM, AND LITHOGRAPHIC TOOL
    7.
    发明申请
    METHOD OF MEASURING AN ALIGNMENT MARK OR AN ALIGNMENT MARK ASSEMBLY, ALIGNMENT SYSTEM, AND LITHOGRAPHIC TOOL 审中-公开

    公开(公告)号：WO2020193039A1

    公开(公告)日：2020-10-01

    申请号：PCT/EP2020/054835

    申请日：2020-02-25

    Applicant: ASML NETHERLANDS B.V.

    Inventor： BIJNEN, Franciscus, Godefridus, Casper ,  BRINKHOF, Ralph

    IPC: G03F9/00

    Abstract: The invention provides a method of measuring an alignment mark or an alignment mark assembly, wherein the alignment mark comprises grid features extending in at least two directions, the method comprising: measuring the alignment mark or alignment mark assembly using an expected location of the alignment mark or alignment mark assembly, determining a first position of the alignment mark or alignment mark assembly in a first direction, determining a second position of the alignment mark or alignment mark assembly in a second direction, wherein the second direction is perpendicular to the first direction, determining a second direction scan offset between the expected location of the alignment mark or alignment mark assembly in the second direction and the determined second position, and correcting the first position on the basis of the second direction scan offset using at least one correction data set to provide a first corrected position.

    POSITION MEASURING METHOD OF AN ALIGNMENT TARGET
    8.
    发明申请
    POSITION MEASURING METHOD OF AN ALIGNMENT TARGET 审中-公开
    对准目标的位置测量方法

    公开(公告)号：WO2017093256A1

    公开(公告)日：2017-06-08

    申请号：PCT/EP2016/079143

    申请日：2016-11-29

    Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

    Inventor： BRINKHOF, Ralph ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  GOOSEN, Maikel, Robert ,  DEMERGIS, Vassili ,  RIJPERS, Bartolomeus, Petrus

    IPC: G03F7/20 ,  G03F9/00

    CPC classification number: G03F9/7046 ,  G03F9/7076 ,  G03F9/7088 ,  G03F9/7092

    Abstract: Disclosed is a method of measuring positions of at least one alignment target on a substrate using an optical system. The method comprises measuring at least one sub-segmented target by illuminating said sub-segmented target with radiation and detecting radiation diffracted by said sub-segmented target using one or more detectors to obtain signals containing positional information of the sub-segmented target. The sub-segmented target comprise structures arranged periodically in at least a first direction, at least some of said structures comprising smaller sub-structures, each sub-segmented target being formed with a positional offset between the structures and the sub- structures that is a combination of both known and unknown components. The signals, together with information on differences between known offsets of the sub-segmented target are used to calculate a measured position of at least one alignment target which is corrected for said unknown component of said positional offset.

    Abstract translation: 公开了一种使用光学系统测量衬底上的至少一个对准目标的位置的方法。 该方法包括通过用辐射照射所述子分段目标并使用一个或多个检测器检测由所述子分段目标衍射的辐射来测量至少一个子分段目标，以获得包含子分段目标的位置信息的信号。 所述子分段式目标包括在至少第一方向上周期性排列的结构，所述结构中的至少一些包括较小的子结构，每个子分段的目标在所述结构与所述子结构之间形成位置偏移， 已知和未知组件的组合。 信号连同关于子分段目标的已知偏移之间的差异的信息被用于计算为所述位置偏移的所述未知分量校正的至少一个对准目标的测量位置。

    METHOD OF CONTROLLING A LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD, CONTROL SYSTEM FOR A LITHOGRAPHIC APPARATUS AND LITHOGRAPHIC APPARATUS
    9.
    发明申请
    METHOD OF CONTROLLING A LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD, CONTROL SYSTEM FOR A LITHOGRAPHIC APPARATUS AND LITHOGRAPHIC APPARATUS 审中-公开
    控制平面设备和设备制造方法的方法，用于平面设备和平面设备的控制系统

    公开(公告)号：WO2017060054A1

    公开(公告)日：2017-04-13

    申请号：PCT/EP2016/071831

    申请日：2016-09-15

    Applicant: ASML NETHERLANDS B.V.

    Inventor： HULSEBOS, Edo, Maria ,  TINNEMANS, Patricius, Aloysius Jacobus ,  BRINKHOF, Ralph ,  HERES, Pieter, Jacob ,  LUCAS, Jorn, Kjeld ,  VERHEES, Loek, Johannes, Petrus ,  VAN DONKELAAR, Ingrid, Margaretha, Ardina ,  BIJNEN, Franciscus, Godefridus, Casper

    IPC: G03F7/20 ,  G03F9/00

    CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F9/7003

    Abstract: In a method of controlling a lithographic apparatus, historical performance measurements (512) are used to calculate a process model (PM) relating to a lithographic process. Current positions of a plurality of alignment marks provided on a current substrate are measured (502) and used to calculate a substrate model relating to a current substrate. Additionally, historical position measurements (522) obtained at the time of processing the prior substrates are used (530) with the historical performance measurements to calculate a model mapping (M). The model mapping is applied (520) to modify the substrate model. The lithographic apparatus is controlled (508) using the process model and the modified substrate model (SM') together (PSM). Overlay performance is improved by avoiding over- or under-correction of correlated components of the process model and the substrate model. The model mapping may be a subspace mapping, and dimensionality of the model mapping may be reduced, before it is used.

    Abstract translation: 在控制光刻设备的方法中，使用历史性能测量（512）来计算与光刻工艺相关的工艺模型（PM）。 测量设置在当前基板上的多个对准标记的当前位置（502）并用于计算与当前基板相关的基板模型。 另外，使用处理现有基板时获得的历史位置测量（522）（530）与历史性能测量值来计算模型映射（M）。 应用模型映射（520）来修改衬底模型。 使用过程模型和修改的底物模型（SM'）在一起（PSM）对光刻设备进行控制（508）。 通过避免过程模型和衬底模型的相关组件的过度校正或欠校正来改善覆盖性能。 模型映射可以是子空间映射，并且在使用模型映射之前可以减小模型映射的维度。

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