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公开(公告)号:WO2017186486A1
公开(公告)日:2017-11-02
申请号:PCT/EP2017/058721
申请日:2017-04-12
Applicant: ASML NETHERLANDS B.V.
Inventor: NASALEVICH, Maxim, Aleksandrovich , ABEGG, Erik, Achilles , BANERJEE, Nirupam , BLAUW, Michiel, Alexander , BROUNS, Derk, Servatius, Gertruda , JANSSEN, Paul , KRUIZINGA, Matthias , LENDERINK, Egbert , MAXIM, Nicolae , NIKIPELOV, Andrey , NOTENBOOM, Arnoud, Willem , PILIEGO, Claudia , PÉTER, Mária , RISPENS, Gijsbert , SCHUH, Nadja , VAN DE KERKHOF, Marcus, Adrianus , VAN DER ZANDE, Willem, Joan , VAN ZWOL, Pieter-Jan , VERBURG, Antonius, Willem , VERMEULEN, Johannes, Petrus, Martinus, Bernardus , VLES, David, Ferdinand , VOORTHUIJZEN, Willem-Pieter , ZDRAVKOV, Alexandar, Nikolov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane comprises a stack having layers in the following order: a first capping layer comprising an oxide of a first metal; a base layer comprising a compound comprising a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer comprising an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
Abstract translation: 公开了用于EUV光刻的膜。 在一种布置中,膜包括具有以下顺序的层的堆叠体:包含第一金属的氧化物的第一封盖层; 基层,其包含含有第二金属和选自Si,B,C和N的附加元素的化合物; 以及包含第三金属的氧化物的第二覆盖层,其中第一金属不同于第二金属,第三金属与第一金属相同或不同。 p>