Abstract:
A lithographic apparatus comprising a projection system configured to project a patterned radiation beam to form an exposure area on a substrate held on a substrate table, the lithographic apparatus further comprising a cooling apparatus for cooling the substrate, wherein the cooling apparatus comprises a cooling element located above the substrate table and adjacent to the exposure area, the cooling element being configured to remove heat from the substrate.
Abstract:
A pellicle comprising a core comprising a material other than silicon carbide, a silicon carbide adhesion layer, and a ruthenium capping layer, the ruthenium capping layer being in contact with the silicon carbide adhesion layer. Also described is a method of preparing a pellicle comprising the steps of: (i) providing a pellicle core; (ii) providing a silicon carbide adhesion layer on the pellicle core; and (iii) providing a ruthenium capping layer in contact with the silicon carbide adhesion layer. Also provided is the use of silicon carbide as an adhesion layer in an EUV pellicle as well as an assembly.
Abstract:
A pellicle for a lithographic apparatus, wherein the pellicle comprises nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus comprising at least one compensating layer selected and configured to counteract changes in the transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
Abstract:
The invention relates to a substrate support (WT) for supporting a substrate (W). The substrate support comprises the main body (MB), a clamping device (VC; VSO) and a dither device (DD). The main body comprises the support surface (S) for supporting the substrate (W). The clamping device is arranged to provide the clamping force to clamp the substrate on the support surface. The dither device is configured to dither the clamping force. The dither device may be configured to dither the clamping force while the substrate W is being loaded onto the support surface.
Abstract:
A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising a planar substrate and at least one membrane layer, wherein the planar substrate comprises an inner region and a border region around the inner region; positioning the stack on a support such that the inner region of the planar substrate is exposed; and selectively removing the inner region of the planar substrate using a non-liquid etchant, such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate.
Abstract:
A pellicle frame (17) for supporting a pellicle, the frame (17) comprising a first surface (17B) and a second surface (17A) opposite the first surface (17A), and structure (18) provided between the first and the second surfaces (17A, 17B); wherein the first and second surfaces (17A, 17B) and the structure (18) at least partially define at least one volume (28) therebetween that is devoid of the material that forms the frame (17).
Abstract:
Membranes for EUV lithography are disclosed. In one arrangement, a membrane comprises a stack having layers in the following order: a first capping layer comprising an oxide of a first metal; a base layer comprising a compound comprising a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer comprising an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
Abstract:
A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and comprising a stack comprising: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine
Abstract:
Methods of manufacturing a pellicle for a lithographic apparatus are disclosed. In one arrangement the method comprises depositing at least one graphene layer on a planar surface of a substrate. The substrate comprises a first substrate portion and a second substrate portion. The method further comprises removing the first substrate portion to form a freestanding membrane from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.
Abstract:
A membrane cleaning apparatus for removing particles from a membrane comprises: a membrane support; and an electric field generating mechanism. The membrane support is for supporting the membrane. The electric field generating mechanism is for generating an electric field in the vicinity of the membrane when supported by the membrane support. The electric field generating mechanism may comprise: one or more collector electrodes; and a mechanism for applying a voltage across a membrane supported by the membrane support and the or each of the one or more collector electrodes.