公开(公告)号：WO2017121547A1

公开(公告)日：2017-07-20

申请号：PCT/EP2016/080228

申请日：2016-12-08

Applicant: ASML NETHERLANDS B.V.

Inventor： EUMMELEN, Erik, Henricus, Egidius, Catharina ,  GATTOBIGIO, Giovanni, Luca ,  MELMAN, Johannes, Cornelis, Paulus ,  LEMPENS, Han, Henricus, Aldegonda ,  YU, Miao ,  ROPS, Cornelius, Maria ,  OLIESLAGERS, Ruud ,  ULUCAN, Artunç ,  POLET, Theodorus, Wilhelmus ,  SPRUYTENBURG, Patrick, Johannes, Wilhelmus

IPC: G03F7/20

CPC classification number: G03F7/70341

Abstract: The present invention relates to a lithographic immersion apparatus comprising a fluid handling structure and a device manufacturing method. In an embodiment, the fluid handling structure is configured to confine immersion fluid to a region and comprises a gas knife system, the gas knife system comprising passages each having an exit, the passages comprising a plurality first passages having a plurality of corresponding first exits, and a plurality of second passages having a plurality of corresponding second exits, wherein at least one first passage and at least one second passage are configured such that the stagnation pressure of gas exiting the first exit is greater than the stagnation pressure of gas exiting the second exit, wherein the plurality of first passages and the plurality of second passages are intermingled and arranged in a line such that the first exits and the second exits form a side of a shape in plan view. In an embodiment, the fluid handling structure is configured to confine immersion fluid to a region and comprising a gas knife in use, the fluid handling structure comprising at least one exit, wherein the at least one exit is arranged so that the gas knife forms a side of a shape in plan view, and the at least one exit has a geometry configured to allow movement of a droplet of immersion fluid from a position radially outward of the gas knife to a position radially inward of the gas knife and configured to restrict movement of a droplet of immersion fluid from a position radially inward of the gas knife to a position radially outward of the gas knife.

Abstract translation: 本发明涉及一种包括流体处理结构和装置制造方法的光刻浸没装置。 在一个实施例中，流体处理结构被构造成将浸没流体限制到区域并且包括气刀系统，气刀系统包括各自具有出口的通路，通路包括具有多个对应的第一出口的多个第一通路， 以及具有多个对应的第二出口的多个第二通道，其中至少一个第一通道和至少一个第二通道被构造成使得离开第一出口的气体的滞止压力大于离开第二出口的气体的滞止压力 其中所述多个第一通道和所述多个第二通道相互混合并排列成一行，使得所述第一出口和所述第二出口在平面图中形成形状的一侧。 在一个实施例中，流体处理结构被构造成将浸没流体限制在区域中并且包括使用中的气刀，流体处理结构包括至少一个出口，其中该至少一个出口被布置为使得气刀形成 并且所述至少一个出口具有几何形状，所述几何形状构造成允许浸没流体的液滴从气刀的径向外部的位置移动到气刀的径向内部的位置并且被配置为限制运动 从气刀的径向内侧的位置到气刀的径向外侧的位置处的浸没流体的液滴的一部分。

公开(公告)号：WO2016000883A1

公开(公告)日：2016-01-07

申请号：PCT/EP2015/062055

申请日：2015-06-01

Applicant: ASML NETHERLANDS B.V.

Inventor： GATTOBIGIO, Giovanni, Luca ,  EUMMELEN, Erik, Henricus, Egidius, Catharina ,  OLIESLAGERS, Ruud ,  PIETERSE, Gerben ,  ROPS, Cornelius, Maria ,  VAN BOKHOVEN, Laurentius, Johannes, Adrianus

IPC: G03F7/20

CPC classification number: G03F7/70891 ,  G03F7/70341 ,  G03F7/709

Abstract: A lithographic apparatus comprising a projection system for projecting a patterned radiation beam onto a substrate and a fluid confinement structure configured to confine immersion fluid in a localized region between a final element of the projection system and a surface of the substrate. The lithographic apparatus is configured to have a space bounded on one side by a surface of at least one of the projection system and a component of the lithographic apparatus at least partially surrounding the final element of the projection system and on the other side by a surface of the fluid confinement structure. The apparatus is configured to maximize the humidity of the gas within the space.

Abstract translation: 一种光刻设备，包括用于将图案化的辐射束投影到衬底上的投影系统和被配置为将浸没流体限制在投影系统的最终元件与衬底的表面之间的局部区域中的流体限制结构。 光刻设备被配置为具有在一侧的边界，所述空间由至少一个投影系统和光刻设备的部件的表面至少部分地围绕投影系统的最终元件，另一侧由表面 的流体限制结构。 该装置被配置为使空间内的气体的湿度最大化。

公开(公告)号：WO2015193036A1

公开(公告)日：2015-12-23

申请号：PCT/EP2015/060427

申请日：2015-05-12

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN BEUZEKOM, Aart, Adrianus ,  ALBERTI, Jozef, Augustinus, Maria ,  SEGERS, Hubert, Marie ,  VAN DER HAM, Ronald ,  FAHRNI, Francis ,  OLIESLAGERS, Ruud ,  PIETERSE, Gerben ,  ROPS, Cornelius, Maria ,  VAN DEN EIJNDEN, Pepijn ,  VAN DONGEN, Paul ,  WILLEMS, Bas

IPC: G03F7/20

CPC classification number: G03F7/7075 ,  G03F7/70341 ,  G03F7/70991

Abstract: A lithographic apparatus comprises a substrate table, post-exposure handling module, a substrate handling robot and a drying station. The substrate table is configured to support a substrate for an exposure process. The post-exposure handling module is for handling the substrate post-exposure. The substrate handling robot is configured to transfer the substrate from the substrate table along a substrate unloading path into the post-exposure handling module. The drying station is configured to actively remove liquid from a surface of the substrate. The drying station is located in the substrate unloading path. The drying station is located in the post-exposure handling module. The post-exposure handling module may be a wafer handler.

Abstract translation: 光刻设备包括基板台，曝光后处理模块，基板处理机器人和干燥台。 衬底台被配置为支撑用于曝光过程的衬底。 后曝光处理模块用于处理基板曝光后。 衬底处理机器人被配置为沿着衬底卸载路径将衬底从衬底台转移到后曝光处理模块中。 干燥站构造成主动地从基板的表面移除液体。 干燥站位于基板卸载路径中。 干燥站位于曝光后处理模块中。 后曝光处理模块可以是晶片处理器。