公开(公告)号：WO2016124393A1

公开(公告)日：2016-08-11

申请号：PCT/EP2016/051007

申请日：2016-01-19

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Xing Lan ,  SMILDE, Hendrik, Jan, Hidde ,  PENG, Yue-Lin ,  CEKLI, Hakki, Ergun ,  PELLO, Josselin ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F7/20

CPC classification number: G01B11/272 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7007

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.

Abstract translation: 公开了一种测量光刻工艺参数的方法，以及相关联的计算机程序和设备。 该方法包括在衬底上提供多个目标结构，每个靶结构包括在衬底的不同层上的第一结构和第二结构。 用测量辐射测量每个目标结构以获得目标结构中的目标不对称性的测量，所述目标不对称性由于第一和第二结构的未对准而包括覆盖贡献，以及由于至少第一个结构中的结构不对称的结构贡献 结构体。 获得与每个目标结构的至少第一结构中的结构不对称有关的结构不对称特征，结构不对称特性与测量辐射的至少一个所选特征无关。 然后使用目标不对称性和结构不对称特征的测量来确定每个目标结构的目标不对称的覆盖贡献。