公开(公告)号：WO2016169901A1

公开(公告)日：2016-10-27

申请号：PCT/EP2016/058582

申请日：2016-04-18

Applicant: ASML NETHERLANDS B.V.

Inventor： ZENG, Si-Han ,  PENG, Yue-Lin ,  FANG, Jen-Yu ,  DEN BOEF, Arie, Jeffrey ,  STRAAIJER, Alexander ,  HUNG, Ching-Yi ,  WARNAAR, Patrick

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G01B11/24 ,  G01B11/272

Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.

Abstract translation: 公开了用于测量光刻工艺的参数的方法，计算机程序和相关联的装置。 该方法包括以下步骤：获得包括与多个第一结构相关的结构不对称性的测量的第一测量，所述多个测量结构不对称中的每一个对应于测量辐射的不同测量组合和至少第一参数的值 ; 获得与多个目标相关的目标不对称性的多个第二测量值，所述多个测量目标不对称中的每一个对应于所述不同测量组合之一，确定描述所述第一测量和所述第二测量之间的关系的关系函数， 对于每个所述测量组合; 根据所述关系函数确定校正的重叠值，所述校正重叠值由于至少所述第一结构中的结构不对称而被校正为结构贡献。

公开(公告)号：WO2016124393A1

公开(公告)日：2016-08-11

申请号：PCT/EP2016/051007

申请日：2016-01-19

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Xing Lan ,  SMILDE, Hendrik, Jan, Hidde ,  PENG, Yue-Lin ,  CEKLI, Hakki, Ergun ,  PELLO, Josselin ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F7/20

CPC classification number: G01B11/272 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7007

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.

Abstract translation: 公开了一种测量光刻工艺参数的方法，以及相关联的计算机程序和设备。 该方法包括在衬底上提供多个目标结构，每个靶结构包括在衬底的不同层上的第一结构和第二结构。 用测量辐射测量每个目标结构以获得目标结构中的目标不对称性的测量，所述目标不对称性由于第一和第二结构的未对准而包括覆盖贡献，以及由于至少第一个结构中的结构不对称的结构贡献 结构体。 获得与每个目标结构的至少第一结构中的结构不对称有关的结构不对称特征，结构不对称特性与测量辐射的至少一个所选特征无关。 然后使用目标不对称性和结构不对称特征的测量来确定每个目标结构的目标不对称的覆盖贡献。