公开(公告)号：WO2022268434A1

公开(公告)日：2022-12-29

申请号：PCT/EP2022/064507

申请日：2022-05-29

Applicant: ASML NETHERLANDS B.V.

Inventor： HUANG, Jiao ,  WANG, Jinze ,  YAN, Yan ,  FAN, Yongfa ,  LIU, Liang ,  FENG, Mu

IPC: G03F7/20 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70625

Abstract: Etch bias is determined based on a curvature of a contour in a substrate pattern. The etch bias is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined and inputted to a simulation model. The simulation model comprises a correlation between etch biases and curvatures of contours. The etch bias for the contour in the substrate pattern is outputted by the simulation model based on the curvature.