公开(公告)号：WO2022268434A1

公开(公告)日：2022-12-29

申请号：PCT/EP2022/064507

申请日：2022-05-29

Applicant: ASML NETHERLANDS B.V.

Inventor： HUANG, Jiao ,  WANG, Jinze ,  YAN, Yan ,  FAN, Yongfa ,  LIU, Liang ,  FENG, Mu

IPC: G03F7/20 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70625

Abstract: Etch bias is determined based on a curvature of a contour in a substrate pattern. The etch bias is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined and inputted to a simulation model. The simulation model comprises a correlation between etch biases and curvatures of contours. The etch bias for the contour in the substrate pattern is outputted by the simulation model based on the curvature.

公开(公告)号：WO2022037875A1

公开(公告)日：2022-02-24

申请号：PCT/EP2021/070206

申请日：2021-07-20

Applicant: ASML NETHERLANDS B.V.

Inventor： HUANG, Jiao ,  WANG, Jinze ,  SHI, Hongfei ,  FENG, Mu ,  ZHAO, Qian ,  WANG, Alvin, Jianjiang ,  XIAO, Yan-Jun ,  LIU, Liang

IPC: G03F7/20 ,  G06T7/00

Abstract: Described herein is a method for selecting good quality images from raw images of a patterned substrate. The method includes obtaining a plurality of raw images (e.g., SEM images) of a patterned substrate; determining a raw image quality metric (e.g., an image score, an average slope, distance between contours) based on data associated with gauges or contours of one or more features within each image of the plurality of raw images, the raw image quality metric being indicative of a raw image quality; and selecting, based on the raw image quality metric, a sub-set of raw images from the plurality of raw images. The sub-set of raw images can be provided for performing more accurate measurements of the one or more features within an image.

公开(公告)号：WO2021259738A1

公开(公告)日：2021-12-30

申请号：PCT/EP2021/066323

申请日：2021-06-17

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Jen-Shiang ,  YANG, Pengcheng ,  HUANG, Jiao ,  LU, Yen-Wen ,  LIU, Liang ,  ZHANG, Chen

IPC: G03F7/20 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705

Abstract: Described herein is a method for determining a likelihood that an assist feature of a mask pattern will print on a substrate. The method includes obtaining (i) a plurality of images of a pattern printed on a substrate and (ii) variance data the plurality of images of the pattern; determining, based on the variance data, a model configured to generate variance data associated with the mask pattern; and determining, based on model-generated variance data for a given mask pattern and a resist image or etch image associated with the given mask pattern, the likelihood that an assist feature of the given mask pattern will be printed on the substrate. The likelihood can be applied to adjust one or more parameters related to a patterning process or a patterning apparatus to reduce the likelihood that the assist feature will print on the substrate.