公开(公告)号：WO2022037875A1

公开(公告)日：2022-02-24

申请号：PCT/EP2021/070206

申请日：2021-07-20

Applicant: ASML NETHERLANDS B.V.

Inventor： HUANG, Jiao ,  WANG, Jinze ,  SHI, Hongfei ,  FENG, Mu ,  ZHAO, Qian ,  WANG, Alvin, Jianjiang ,  XIAO, Yan-Jun ,  LIU, Liang

IPC: G03F7/20 ,  G06T7/00

Abstract: Described herein is a method for selecting good quality images from raw images of a patterned substrate. The method includes obtaining a plurality of raw images (e.g., SEM images) of a patterned substrate; determining a raw image quality metric (e.g., an image score, an average slope, distance between contours) based on data associated with gauges or contours of one or more features within each image of the plurality of raw images, the raw image quality metric being indicative of a raw image quality; and selecting, based on the raw image quality metric, a sub-set of raw images from the plurality of raw images. The sub-set of raw images can be provided for performing more accurate measurements of the one or more features within an image.

公开(公告)号：WO2019179782A1

公开(公告)日：2019-09-26

申请号：PCT/EP2019/055691

申请日：2019-03-07

Applicant: ASML NETHERLANDS B.V.

Inventor： SHI, Hongfei ,  WANG, Jinze ,  YANG, Peng-cheng ,  WANG, Lei ,  FENG, Mu

IPC: G03F7/20

Abstract: The present disclosure pertains to a method for accelerating calibration of a fabrication process model, the method comprising performing one or more iterations of: defining one or more fabrication process model terms; receiving predetermined information related to the one or more fabrication process model terms; generating a fabrication process model based on the predetermined information, the fabrication process model configured to generate one or more predictions related to a metrology gauge; determining whether a prediction related to a dimension of a gauge is within a predetermined threshold of the gauge as measured on a post-fabrication process wafer; and responsive to the prediction not breaching the predetermined threshold, optimizing the one or more fabrication process terms such that the prediction related to the dimension of the gauge is within the predetermined threshold of the gauge as measured on the post-fabrication process wafer.

公开(公告)号：WO2022268434A1

公开(公告)日：2022-12-29

申请号：PCT/EP2022/064507

申请日：2022-05-29

Applicant: ASML NETHERLANDS B.V.

Inventor： HUANG, Jiao ,  WANG, Jinze ,  YAN, Yan ,  FAN, Yongfa ,  LIU, Liang ,  FENG, Mu

IPC: G03F7/20 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70625

Abstract: Etch bias is determined based on a curvature of a contour in a substrate pattern. The etch bias is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined and inputted to a simulation model. The simulation model comprises a correlation between etch biases and curvatures of contours. The etch bias for the contour in the substrate pattern is outputted by the simulation model based on the curvature.

公开(公告)号：WO2021032448A1

公开(公告)日：2021-02-25

申请号：PCT/EP2020/071742

申请日：2020-08-01

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHENG, Yunan ,  FAN, Yongfa ,  FENG, Mu ,  ZHENG, Leiwu ,  WANG, Jen-Shiang ,  LUO, Ya ,  ZHANG, Chenji ,  CHEN, Jun ,  HOU, Zhenyu ,  WANG, Jinze ,  CHEN, Feng ,  MA, Ziyang ,  GUO, Xin ,  CHENG, Jin

IPC: G03F7/20

Abstract: Described herein are method generating modified simulated contours and/or generate metrology gauges based on the modified contours. A method of generating metrology gauges for measuring a physical characteristic of a structure on a substrate includes obtaining (i) measured data associated with the physical characteristic of the structure printed on the substrate, and (ii) at least portion of a simulated contour of the structure, the portion of the simulated contour being associated with the measured data; modifying, based on the measured data, the portion of the simulated contour of the structure; and generating the metrology gauges on or adjacent to the modified portion of the simulated contour, the metrology gauges being placed to measure the physical characteristic of the simulated contour of the structure.