公开(公告)号：WO2018033363A1

公开(公告)日：2018-02-22

申请号：PCT/EP2017/069068

申请日：2017-07-27

Applicant: ASML NETHERLANDS B.V.

Inventor： FAN, Yongfa ,  FENG, Mu ,  ZHENG, Leiwu ,  ZHAO, Qian ,  WANG, Jen-Shiang

IPC: G03F7/20

CPC classification number: G03F7/70616 ,  G03F7/70425 ,  G03F7/70433 ,  G03F7/705

Abstract: Provided is a process to model post-exposure effects in patterning processes, the process including: obtaining, with one or more processors, values based on measurements of structures formed on one or more substrates by a post-exposure process and values of a first pair of process parameters by which process conditions were varied; modeling, with one or more processors, as a surface, correlation between the values based on measurements of the structures and the values of the first pair of process parameters; and storing, with one or more processors, the model in memory.

Abstract translation: 提供了一种在构图过程中对后曝光效果进行建模的过程，该过程包括：利用一个或多个处理器获得基于对由一个或多个基板形成的结构的测量值的值， 暴露过程和第一对过程参数的值，通过该过程参数改变过程条件; 使用一个或多个处理器作为表面，建模基于结构的测量值和第一对处理参数的值之间的相关性; 并用一个或多个处理器将模型存储在内存中。

公开(公告)号：WO2022268434A1

公开(公告)日：2022-12-29

申请号：PCT/EP2022/064507

申请日：2022-05-29

Applicant: ASML NETHERLANDS B.V.

Inventor： HUANG, Jiao ,  WANG, Jinze ,  YAN, Yan ,  FAN, Yongfa ,  LIU, Liang ,  FENG, Mu

IPC: G03F7/20 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70625

Abstract: Etch bias is determined based on a curvature of a contour in a substrate pattern. The etch bias is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined and inputted to a simulation model. The simulation model comprises a correlation between etch biases and curvatures of contours. The etch bias for the contour in the substrate pattern is outputted by the simulation model based on the curvature.

公开(公告)号：WO2021032448A1

公开(公告)日：2021-02-25

申请号：PCT/EP2020/071742

申请日：2020-08-01

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHENG, Yunan ,  FAN, Yongfa ,  FENG, Mu ,  ZHENG, Leiwu ,  WANG, Jen-Shiang ,  LUO, Ya ,  ZHANG, Chenji ,  CHEN, Jun ,  HOU, Zhenyu ,  WANG, Jinze ,  CHEN, Feng ,  MA, Ziyang ,  GUO, Xin ,  CHENG, Jin

IPC: G03F7/20

Abstract: Described herein are method generating modified simulated contours and/or generate metrology gauges based on the modified contours. A method of generating metrology gauges for measuring a physical characteristic of a structure on a substrate includes obtaining (i) measured data associated with the physical characteristic of the structure printed on the substrate, and (ii) at least portion of a simulated contour of the structure, the portion of the simulated contour being associated with the measured data; modifying, based on the measured data, the portion of the simulated contour of the structure; and generating the metrology gauges on or adjacent to the modified portion of the simulated contour, the metrology gauges being placed to measure the physical characteristic of the simulated contour of the structure.

公开(公告)号：WO2020173687A1

公开(公告)日：2020-09-03

申请号：PCT/EP2020/053204

申请日：2020-02-07

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Lei ,  FENG, Mu ,  ZHAO, Qian

IPC: G03F7/20 ,  H01L21/027

Abstract: Described herein are methods (900) for gauge selection. A method for gauge selection may be used in calibrating a process model associated with a patterning process. The method (900) includes, at (P902), obtaining a set of input gauges (902) having one or more properties (e.g., gauge name, weight, dose, focus, model error, etc.) associated with the patterning process, at (P904), selecting a subset of initial gauges (904) from the set of input gauges (902) the selecting the subset of initial gauges comprises: determining a first subset of gauges from the set of input gauges based on a first property parameter of the one or more properties, the first subset of gauges being configured to calibrate a process model (e.g., optics model, resist mode., etc.).

公开(公告)号：WO2019179782A1

公开(公告)日：2019-09-26

申请号：PCT/EP2019/055691

申请日：2019-03-07

Applicant: ASML NETHERLANDS B.V.

Inventor： SHI, Hongfei ,  WANG, Jinze ,  YANG, Peng-cheng ,  WANG, Lei ,  FENG, Mu

IPC: G03F7/20

Abstract: The present disclosure pertains to a method for accelerating calibration of a fabrication process model, the method comprising performing one or more iterations of: defining one or more fabrication process model terms; receiving predetermined information related to the one or more fabrication process model terms; generating a fabrication process model based on the predetermined information, the fabrication process model configured to generate one or more predictions related to a metrology gauge; determining whether a prediction related to a dimension of a gauge is within a predetermined threshold of the gauge as measured on a post-fabrication process wafer; and responsive to the prediction not breaching the predetermined threshold, optimizing the one or more fabrication process terms such that the prediction related to the dimension of the gauge is within the predetermined threshold of the gauge as measured on the post-fabrication process wafer.

公开(公告)号：WO2021228725A1

公开(公告)日：2021-11-18

申请号：PCT/EP2021/062227

申请日：2021-05-07

Applicant: ASML NETHERLANDS B.V.

Inventor： HUANG, Jiao ,  ZHENG, Yunan ,  ZHAO, Qian ,  LIANG, Jiao ,  FAN, Yongfa ,  FENG, Mu

IPC: G03F7/20 ,  G06T7/00 ,  G06T7/11

Abstract: Systems and methods for determining one or more characteristic metrics for a portion of a pattern on a substrate are described. Pattern information for the pattern on the substrate is received. The pattern on the substrate has first and second portions. The first portion (404A,406B) of the pattern is blocked (400,402), for example with a geometrical block mask (408,410), based on the pattern information, such that the second portion of the pattern remains unblocked. The one or more metrics are determined for the unblocked second portion of the pattern. In some embodiments, the first and second portions of the pattern correspond to different exposures in a semiconductor lithography process. The semiconductor lithography process may be a multiple patterning technology process, for example, such as a double patterning process, a triple patterning process, or a spacer double patterning process.

公开(公告)号：WO2021004725A1

公开(公告)日：2021-01-14

申请号：PCT/EP2020/066446

申请日：2020-06-15

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Lei ,  CHEN, Yi-Yin ,  FENG, Mu ,  ZHAO, Qian

IPC: G03F7/20

Abstract: Systems and methods for reducing prediction uncertainty in a prediction model associated with a patterning process are described. These may be used in calibrating a process model associated with the patterning process, for example. Reducing the uncertainty in the prediction model may comprise determining a prediction uncertainty parameter based on prediction data. The prediction data may be determined using the prediction model. The prediction model may have been calibrated with calibration data. The prediction uncertainty parameter may be associated with variation in the prediction data. Reducing the uncertainty in the prediction model may include selecting a subset of process data based on the prediction uncertainty parameter; and recalibrating the prediction model using the calibration data and the selected subset of the process data.

公开(公告)号：WO2019233711A1

公开(公告)日：2019-12-12

申请号：PCT/EP2019/062271

申请日：2019-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Jen-Shiang ,  ZHAO, Qian ,  GUO, Yunbo ,  LU, Yen-Wen ,  FENG, Mu ,  ZHANG, Qiang

IPC: G03F7/20

Abstract: A method for improving a process model for a patterning process includes obtaining a) a measured contour (330) from an image capture device, and b) a simulated contour (510) generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.

公开(公告)号：WO2023036593A1

公开(公告)日：2023-03-16

申请号：PCT/EP2022/073343

申请日：2022-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： GUO, Yunbo ,  WANG, Zhu ,  YANG, Feng ,  ZHAO, Qian ,  FENG, Mu ,  WANG, Jen-Shiang

IPC: G03F7/20 ,  G01B11/24 ,  G01B15/04 ,  G01N21/956 ,  G06N20/00 ,  H01J37/28

Abstract: Described herein is a metrology system and a method for converting metrology data via a trained machine learning (ML) model. The method includes accessing a first (MD1) SEM data set (e.g., images, contours, etc.) acquired by a first scanning electron metrology (SEM) system (TS1) and a second (MD2) SEM data set acquired by a second SEM system (TS2), where the first SEM data set and the second SEM data set being associated with a patterned substrate. Using the first SEM data set and the second SEM data set as training data, a machine learning (ML) model is trained (P303) such that the trained ML model is configured to convert (P307) a metrology data set (310) acquired (P305) by the second SEM system to a converted data set (311) having characteristics comparable to metrology data being acquired by the first SEM system. Furthermore, measurements may be determined based on the converted SEM data.

公开(公告)号：WO2022037875A1

公开(公告)日：2022-02-24

申请号：PCT/EP2021/070206

申请日：2021-07-20

Applicant: ASML NETHERLANDS B.V.

Inventor： HUANG, Jiao ,  WANG, Jinze ,  SHI, Hongfei ,  FENG, Mu ,  ZHAO, Qian ,  WANG, Alvin, Jianjiang ,  XIAO, Yan-Jun ,  LIU, Liang

IPC: G03F7/20 ,  G06T7/00

Abstract: Described herein is a method for selecting good quality images from raw images of a patterned substrate. The method includes obtaining a plurality of raw images (e.g., SEM images) of a patterned substrate; determining a raw image quality metric (e.g., an image score, an average slope, distance between contours) based on data associated with gauges or contours of one or more features within each image of the plurality of raw images, the raw image quality metric being indicative of a raw image quality; and selecting, based on the raw image quality metric, a sub-set of raw images from the plurality of raw images. The sub-set of raw images can be provided for performing more accurate measurements of the one or more features within an image.