公开(公告)号：WO2023088649A1

公开(公告)日：2023-05-25

申请号：PCT/EP2022/079894

申请日：2022-10-26

Applicant: ASML NETHERLANDS B.V.

Inventor： CHENG, Jin ,  CHEN, Feng ,  ZHENG, Leiwu ,  FAN, Yongfa ,  LU, Yen-Wen ,  WANG, Jen-Shiang ,  MA, Ziyang ,  ZHU, Dianwen ,  CHEN, Xi ,  ZHAO, Yu

IPC: G03F1/36 ,  G03F1/70 ,  G03F7/20

Abstract: An etch bias direction is determined based on a curvature of a contour in a substrate pattern. The etch bias direction is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined, and an etch bias direction is determined based on the curvature by considering the curvatures of adjacent contour portions. A simulation model is used to determine an etch effect based on the etch bias direction for an etching process on the substrate pattern.

公开(公告)号：WO2018138123A1

公开(公告)日：2018-08-02

申请号：PCT/EP2018/051669

申请日：2018-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： FENG, Mu ,  SHAYEGAN SALEK, Mir Farrokh ,  ZHU, Dianwen ,  ZHENG, Leiwu ,  HOWELL, Rafael C. ,  WANG, Jen-Shiang

IPC: G03F7/20

Abstract: Disclosed herein are methods of constructing a process model for simulating a characteristic of a product of lithography from patterns produced under different processing conditions. The methods use a deviation between the variation of the simulated characteristic and the variation of the measured characteristic to adjust the parameters of the process model.