公开(公告)号：WO2021032448A1

公开(公告)日：2021-02-25

申请号：PCT/EP2020/071742

申请日：2020-08-01

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHENG, Yunan ,  FAN, Yongfa ,  FENG, Mu ,  ZHENG, Leiwu ,  WANG, Jen-Shiang ,  LUO, Ya ,  ZHANG, Chenji ,  CHEN, Jun ,  HOU, Zhenyu ,  WANG, Jinze ,  CHEN, Feng ,  MA, Ziyang ,  GUO, Xin ,  CHENG, Jin

IPC: G03F7/20

Abstract: Described herein are method generating modified simulated contours and/or generate metrology gauges based on the modified contours. A method of generating metrology gauges for measuring a physical characteristic of a structure on a substrate includes obtaining (i) measured data associated with the physical characteristic of the structure printed on the substrate, and (ii) at least portion of a simulated contour of the structure, the portion of the simulated contour being associated with the measured data; modifying, based on the measured data, the portion of the simulated contour of the structure; and generating the metrology gauges on or adjacent to the modified portion of the simulated contour, the metrology gauges being placed to measure the physical characteristic of the simulated contour of the structure.

公开(公告)号：WO2023088649A1

公开(公告)日：2023-05-25

申请号：PCT/EP2022/079894

申请日：2022-10-26

Applicant: ASML NETHERLANDS B.V.

Inventor： CHENG, Jin ,  CHEN, Feng ,  ZHENG, Leiwu ,  FAN, Yongfa ,  LU, Yen-Wen ,  WANG, Jen-Shiang ,  MA, Ziyang ,  ZHU, Dianwen ,  CHEN, Xi ,  ZHAO, Yu

IPC: G03F1/36 ,  G03F1/70 ,  G03F7/20

Abstract: An etch bias direction is determined based on a curvature of a contour in a substrate pattern. The etch bias direction is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined, and an etch bias direction is determined based on the curvature by considering the curvatures of adjacent contour portions. A simulation model is used to determine an etch effect based on the etch bias direction for an etching process on the substrate pattern.

公开(公告)号：WO2020254066A1

公开(公告)日：2020-12-24

申请号：PCT/EP2020/064373

申请日：2020-05-25

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Jen-Shiang ,  CHEN, Feng ,  FRANCAVILLA, Matteo, Alessandro ,  BIJLSMA, Jan, Wouter

IPC: G03F7/20

Abstract: A patterning process modeling method is described. The method comprises determining, with a front end of a process model, a function associated with process physics and/or chemistry of an operation within a patterning process flow; and determining, with a back end of the process model, a predicted wafer geometry. The back end comprises a volumetric representation of a target area on the wafer. The predicted wafer geometry is determined by applying the function from the front end to manipulate the volumetric representation of the wafer. The volumetric representation of the wafer may be generated using volumetric dynamic B-trees. The volumetric representation of the wafer may be manipulated using a level set method. The function associated with the process physics and/or chemistry of the operation within the patterning process flow may be a velocity/speed function. Incoming flux on a modeled surface of the wafer may be determined using ray tracing.

公开(公告)号：WO2020020759A1

公开(公告)日：2020-01-30

申请号：PCT/EP2019/069460

申请日：2019-07-19

Applicant: ASML NETHERLANDS B.V.

Inventor： FAN, Chi-Hsiang ,  CHEN, Feng ,  ZHAO, Wangshi ,  ZHANG, Youping

IPC: G03F7/20 ,  G06F17/50

Abstract: A method for determining an etch profile is described. The method comprises determining a starting masking layer profile. Loading information is determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information is determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information is determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.

公开(公告)号：WO2020193095A1

公开(公告)日：2020-10-01

申请号：PCT/EP2020/055785

申请日：2020-03-05

Applicant: ASML NETHERLANDS B.V.

Inventor： MA, Ziyang ,  CHENG, Jin ,  LUO, Ya ,  ZHENG, Leiwu ,  GUO, Xin ,  WANG, Jen-Shiang ,  FAN, Yongfa ,  CHEN, Feng ,  CHEN, Yi-Yin ,  ZHANG, Chenji ,  LU, Yen-Wen

IPC: G03F7/20 ,  G06N3/08 ,  G06N20/00

Abstract: A method for training a patterning process model, the patterning process model configured to predict a pattern that will be formed on a patterning process. The method involves obtaining an image data associated with a desired pattern, a measured pattern of the substrate, a first model comprising a first set of parameters, and a machine learning model comprising a second set of parameters; and iteratively determining values of the first set of parameters and the second set of parameters to train the patterning process model. An iteration involves executing, using the image data, the first model and the machine learning model to cooperatively predict a printed pattern of the substrate; and modifying the values of the first set of parameters and the second set of parameters such that a difference between the measured pattern and the predicted pattern of the patterning process model is reduced.