公开(公告)号：WO2023088649A1

公开(公告)日：2023-05-25

申请号：PCT/EP2022/079894

申请日：2022-10-26

Applicant: ASML NETHERLANDS B.V.

Inventor： CHENG, Jin ,  CHEN, Feng ,  ZHENG, Leiwu ,  FAN, Yongfa ,  LU, Yen-Wen ,  WANG, Jen-Shiang ,  MA, Ziyang ,  ZHU, Dianwen ,  CHEN, Xi ,  ZHAO, Yu

IPC: G03F1/36 ,  G03F1/70 ,  G03F7/20

Abstract: An etch bias direction is determined based on a curvature of a contour in a substrate pattern. The etch bias direction is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined, and an etch bias direction is determined based on the curvature by considering the curvatures of adjacent contour portions. A simulation model is used to determine an etch effect based on the etch bias direction for an etching process on the substrate pattern.

公开(公告)号：WO2020193095A1

公开(公告)日：2020-10-01

申请号：PCT/EP2020/055785

申请日：2020-03-05

Applicant: ASML NETHERLANDS B.V.

Inventor： MA, Ziyang ,  CHENG, Jin ,  LUO, Ya ,  ZHENG, Leiwu ,  GUO, Xin ,  WANG, Jen-Shiang ,  FAN, Yongfa ,  CHEN, Feng ,  CHEN, Yi-Yin ,  ZHANG, Chenji ,  LU, Yen-Wen

IPC: G03F7/20 ,  G06N3/08 ,  G06N20/00

Abstract: A method for training a patterning process model, the patterning process model configured to predict a pattern that will be formed on a patterning process. The method involves obtaining an image data associated with a desired pattern, a measured pattern of the substrate, a first model comprising a first set of parameters, and a machine learning model comprising a second set of parameters; and iteratively determining values of the first set of parameters and the second set of parameters to train the patterning process model. An iteration involves executing, using the image data, the first model and the machine learning model to cooperatively predict a printed pattern of the substrate; and modifying the values of the first set of parameters and the second set of parameters such that a difference between the measured pattern and the predicted pattern of the patterning process model is reduced.

公开(公告)号：WO2021028228A1

公开(公告)日：2021-02-18

申请号：PCT/EP2020/071453

申请日：2020-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： MA, Ziyang ,  CHENG, Jin ,  LUO, Ya ,  ZHENG, Leiwu ,  GUO, Xin ,  WANG, Jen-Shiang

IPC: G03F1/36 ,  G03F7/20 ,  G06N3/04 ,  G06N3/08

Abstract: Described herein is a method for training a machine learning model configured to predict values of a physical characteristic associated with a substrate for use in adjusting a patterning process. The method involves obtaining a reference image; determining a first set of model parameter values of the machine learning model such that a first cost function is reduced from an initial value of the cost function obtained using an initial set of model parameter values, where the first cost function is a difference between the reference image and an image generated via the machine learning model; and training, using the first set of model parameter values, the machine learning model such that a combination of the first cost function and a second cost function is iteratively reduced, the second cost function is a difference between measured values and predicted values.

公开(公告)号：WO2021032448A1

公开(公告)日：2021-02-25

申请号：PCT/EP2020/071742

申请日：2020-08-01

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHENG, Yunan ,  FAN, Yongfa ,  FENG, Mu ,  ZHENG, Leiwu ,  WANG, Jen-Shiang ,  LUO, Ya ,  ZHANG, Chenji ,  CHEN, Jun ,  HOU, Zhenyu ,  WANG, Jinze ,  CHEN, Feng ,  MA, Ziyang ,  GUO, Xin ,  CHENG, Jin

IPC: G03F7/20

Abstract: Described herein are method generating modified simulated contours and/or generate metrology gauges based on the modified contours. A method of generating metrology gauges for measuring a physical characteristic of a structure on a substrate includes obtaining (i) measured data associated with the physical characteristic of the structure printed on the substrate, and (ii) at least portion of a simulated contour of the structure, the portion of the simulated contour being associated with the measured data; modifying, based on the measured data, the portion of the simulated contour of the structure; and generating the metrology gauges on or adjacent to the modified portion of the simulated contour, the metrology gauges being placed to measure the physical characteristic of the simulated contour of the structure.