A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION
    2.
    发明申请
    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION 审中-公开
    化学机械抛光(CMP)组合物

    公开(公告)号:WO2016008896A1

    公开(公告)日:2016-01-21

    申请号:PCT/EP2015/066086

    申请日:2015-07-14

    Applicant: BASF SE

    CPC classification number: C09G1/02 C09G1/00

    Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0,2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0,001 to 0,02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

    Abstract translation: 化学机械抛光(CMP)组合物(Q),其包含(A)基于相应CMP组合物的总重量的总量为0.0001至2.5重量%的胶体或热解无机颗粒(A)或其混合物 (B)基于相应CMP组合物(C)的总重量,总量为0.2至1重量%的至少一个氨基酸至少一种腐蚀抑制剂,总量为0.001至0 ,相对于相应的CMP组合物(E)的总量,基于相对于CMP组合物(D)的总重量为02重量%,基于过氧化氢作为氧化剂的总重量为0.0001重量%至2重量% 水性介质,其中CMP组成(Q)的pH在6至9.5的范围内。

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