公开(公告)号：WO2016102531A1

公开(公告)日：2016-06-30

申请号：PCT/EP2015/080913

申请日：2015-12-22

Applicant: BASF SE

Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza ,  GUEVENC, Haci Osman ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/00

CPC classification number: C09G1/02 ,  B24B37/20 ,  C09K3/1409 ,  C23F3/06 ,  H01L21/3212 ,  H01L21/7684

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

Abstract translation: 使用化学机械抛光（CMP）组合物（Q）用于包含（i）钴和/或（ii）钴合金的基底（S）的化学机械抛光，其中所述CMP组合物（Q）包含（A）无机 颗粒，（B）具有至少一种羧酸作为缓蚀剂的取代芳族化合物，（C）至少一种氨基酸，（D）至少一种氧化剂，（E）水性介质，其中所述CMP组合物 ）的pH为7〜10。

公开(公告)号：WO2016008896A1

公开(公告)日：2016-01-21

申请号：PCT/EP2015/066086

申请日：2015-07-14

Applicant: BASF SE

Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  GUEVENC, Haci Osman ,  PRÖLSS, Julian ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza

IPC: C09G1/00

CPC classification number: C09G1/02 ,  C09G1/00

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0,2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0,001 to 0,02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

Abstract translation: 化学机械抛光（CMP）组合物（Q），其包含（A）基于相应CMP组合物的总重量的总量为0.0001至2.5重量％的胶体或热解无机颗粒（A）或其混合物 （B）基于相应CMP组合物（C）的总重量，总量为0.2至1重量％的至少一个氨基酸至少一种腐蚀抑制剂，总量为0.001至0 ，相对于相应的CMP组合物（E）的总量，基于相对于CMP组合物（D）的总重量为02重量％，基于过氧化氢作为氧化剂的总重量为0.0001重量％至2重量％ 水性介质，其中CMP组成（Q）的pH在6至9.5的范围内。

公开(公告)号：WO2020120641A1

公开(公告)日：2020-06-18

申请号：PCT/EP2019/084771

申请日：2019-12-12

Applicant: BASF SE

Inventor： GUEVENC, Haci Osman ,  LAUTER, Michael ,  WEI, Te Yu ,  CHIU, Wei Lan ,  GOLZARIAN, Reza ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/30 ,  H01L21/321 ,  H01L21/02

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：WO2020120522A1

公开(公告)日：2020-06-18

申请号：PCT/EP2019/084539

申请日：2019-12-11

Applicant: BASF SE

Inventor： GUEVENC, Haci Osman ,  LAUTER, Michael ,  WEI, Te Yu ,  CHIU, Wei Lan ,  GOLZARIAN, Reza ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/30 ,  H01L21/321 ,  H01L21/02

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP)methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：WO2020120520A1

公开(公告)日：2020-06-18

申请号：PCT/EP2019/084537

申请日：2019-12-11

Applicant: BASF SE

Inventor： GUEVENC, Haci Osman ,  LEUNISSEN, Leonardus ,  LAUTER, Michael ,  GOLZARIAN, Reza ,  DAESCHLEIN, Christian ,  PROELSS, Julian ,  WEI, Te Yu

IPC: C09G1/02 ,  H01L21/30 ,  C09K3/14 ,  H01L21/321 ,  H01L21/02

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：WO2019101555A1

公开(公告)日：2019-05-31

申请号：PCT/EP2018/080888

申请日：2018-11-12

Applicant: BASF SE

Inventor： DAESCHLEIN, Christian ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza ,  WEI, Te Yu ,  GUEVENC, Haci Osman ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/321

Abstract: The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) com- position comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.

公开(公告)号：WO2016102279A1

公开(公告)日：2016-06-30

申请号：PCT/EP2015/080068

申请日：2015-12-16

Applicant: BASF SE

Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza ,  GUEVENC, Haci Osman ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/321

CPC classification number: C09G1/02 ,  B24B37/044 ,  C08K5/5435 ,  C09D5/00 ,  C09D7/63 ,  C09D133/08 ,  C09K3/1409 ,  H01L21/3212

Abstract: Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R 1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

Abstract translation: 使用化学机械抛光（CMP）组合物用于抛光包含基底的钴和/或共合金合金摘要使用化学机械抛光（CMP）组合物（Q）进行基底（S）的化学机械抛光，所述基底包括（i ）钴和/或（ii）钴合金，其中CMP组合物（Q）包含（A）无机颗粒（B）通式（I）的取代的四唑衍生物，其中R 1是H，羟基，烷基，芳基 烷基芳基，氨基，羧基，烷基羧基，硫代或烷硫基。 （C）至少一种氨基酸（D）至少一种氧化剂，（E）水性介质，其中所述CMP组合物（Q）的pH为7至10。

公开(公告)号：WO2016102204A1

公开(公告)日：2016-06-30

申请号：PCT/EP2015/079349

申请日：2015-12-11

Applicant: BASF SE

Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza ,  GUEVENC, Haci Osman ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

IPC: C09G1/00 ,  C09G1/02

CPC classification number: C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R 1 , R 2 , R 3 , R 4 , R 5 and R 6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C 2 -C 10 -alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

Abstract translation: 使用化学机械抛光（CMP）组合物（Q）用于包含（i）钴和/或（ii）钴合金的基底（S）的化学机械抛光，其中所述CMP组合物（Q）包含（A）无机 颗粒（B）通式（I）的三嗪衍生物，其中R1，R2，R3，R4，R5和R6彼此独立地为H，甲基，乙基，丙基，丁基，戊基，C2-C10-烷基羧酸， 羟甲基，乙烯基或烯丙基（C）至少一个氨基酸，（D）至少一种氧化剂（E）水性介质，其中所述CMP组合物（Q）的pH为7至10。

公开(公告)号：WO2016024177A1

公开(公告)日：2016-02-18

申请号：PCT/IB2015/055608

申请日：2015-07-24

Applicant: BASF SE ,  BASF (CHINA) COMPANY LIMITED

Inventor： LAN, Yongqing ,  NOLLER, Bastian Marten ,  JIANG, Liang ,  SHEN, Daniel Kwo-Hung ,  GOLZARIAN, Reza

IPC: C09K3/14 ,  H01L21/304

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463

Abstract: Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.

Abstract translation: 描述了包含有机/无机复合颗粒形式的磨料颗粒的化学 - 机械抛光（CMP）组合物，以及在CMP组合物中使用所述复合颗粒作为磨料颗粒，以及制造包含化学品的半导体器件的方法 在所述CMP组合物存在下对衬底进行机械抛光。