Abstract:
The invention provides a chemical-mechanical polishing composition containing abrasive, an ionic polymer of formula (I) wherein X 1 and X 2 , Z 1 and Z 2 , R 1 , R 2 , R 3 and R 4 , and n are as defined herein, a polyhydroxy aromatic compound, a polyvinyl alcohol, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
Abstract:
The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a sapphire substrate. The composition contains a diamond abrasive and a pH adjuster. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
Abstract:
The invention provides a chemical mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt.% to about 1 wt.% of wet process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000 ppm of a non fluorinated nonionic surfactant, (d) an amino acid, and (e) water, wherein the polishing composition has a pH of about 3 to about 8. The invention further provides a method of polishing a substrate with the polishing composition.