公开(公告)号：WO2015171423A1

公开(公告)日：2015-11-12

申请号：PCT/US2015/028544

申请日：2015-04-30

Applicant: CABOT MICROELECTRONICS CORPORATION ,  LAU, Hon Wu ,  WHITE, Michael

Inventor： LAU, Hon Wu ,  WHITE, Michael

IPC: C09K3/14 ,  H01L21/304

CPC classification number: G09G1/02 ,  B24B37/04 ,  B24B37/044 ,  C09G1/02 ,  C09G1/04 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising wet-process silica particles, (b) a water-soluble polymer, (c) an oxidizing agent, (d) a chelating agent, (e) a pH-adjusting agent, and (f) an aqueous carrier, wherein the pH of the polishing composition is about 1 to about 7. The invention also provides a method of polishing a substrate, especially a nickel-phosphorus substrate, with the polishing composition.

Abstract translation: 本发明提供一种化学机械抛光组合物，其包括（a）包含湿法二氧化硅颗粒的磨料，（b）水溶性聚合物，（c）氧化剂，（d）螯合剂，（e） 调整剂，和（f）水性载体，其中抛光组合物的pH为约1至约7.本发明还提供了用抛光组合物研磨基材，特别是镍 - 磷基材的方法。

公开(公告)号：WO2012030752A3

公开(公告)日：2012-03-08

申请号：PCT/US2011/049629

申请日：2011-08-30

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： WHITE, Michael ,  ROMINE, Richard ,  REISS, Brian ,  GILLILAND, Jeffrey ,  JONES, Lamon

IPC: C09K3/14 ,  H01L21/304

Abstract: The invention relates to a chemical-mechanical polishing composition comprising silica, one or more organic carboxylic acids or salts thereof, one or more polysaccharides, one or more bases, optionally one or more surfactants and/or polymers, optionally one or more reducing agents, optionally one or more biocides, and water, wherein the polishing composition has an alkaline pH. The polishing composition exhibits a high removal rate and low particle defects and low haze. The invention further relates to a method of chemically-mechanically polishing a substrate using the polishing composition described herein.

公开(公告)号：WO2009111001A2

公开(公告)日：2009-09-11

申请号：PCT/US2009/001326

申请日：2009-03-02

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： WHITE, Michael ,  JONES, Lamon ,  GILLILAND, Jeffrey ,  MOEGGENBORG, Kevin

IPC: H01L21/304

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/0475 ,  H01L29/1608

Abstract: The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.

Abstract translation: 本发明的方法包括用包含液体载体，研磨剂和氧化剂的抛光组合物对包含至少一层碳化硅的基材进行化学机械抛光。

公开(公告)号：WO2015108729A1

公开(公告)日：2015-07-23

申请号：PCT/US2015/010426

申请日：2015-01-07

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： PALANISAMY CHINNATHAMBI, Selvaraj ,  WHITE, Michael

IPC: C09K3/14 ,  G11B5/84

CPC classification number: C09G1/02 ,  B24B1/00 ,  C01P2004/64 ,  C09C1/06 ,  C09C1/3054 ,  C09C1/3072 ,  C09C1/309 ,  C09G1/00 ,  C09G1/04 ,  C09K3/1445 ,  C09K13/00 ,  C09K13/06 ,  G11B5/8404 ,  H01L21/30625 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition containing aluminate-modified silica particles, a polyacrylamide, a heterocyclic film-forming agent, and water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Abstract translation: 本发明提供一种含有铝酸盐改性二氧化硅颗粒，聚丙烯酰胺，杂环成膜剂和水的化学机械抛光组合物。 本发明还提供了一种通过使基底与抛光垫和化学机械抛光组合物接触来对基底，特别是镍 - 磷基底进行化学机械抛光的方法，相对于基底移动抛光垫和抛光组合物， 并研磨基底的至少一部分以抛光基底。

公开(公告)号：WO2012083115A3

公开(公告)日：2012-06-21

申请号：PCT/US2011/065366

申请日：2011-12-16

Applicant: CABOT MICROELECTRONICS CORPORATION ,  REISS, Brian ,  JOHNS, Timothy P. ,  WHITE, Michael ,  JONES, Lamon ,  CLARK, John

Inventor： REISS, Brian ,  JOHNS, Timothy P. ,  WHITE, Michael ,  JONES, Lamon ,  CLARK, John

IPC: C09K3/14 ,  H01L21/304

Abstract: The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, a compound comprising an azole ring, and water, wherein the polishing composition has a pH of 7 to 11. The invention further provides a method of polishing a substrate with the polishing composition.

公开(公告)号：WO2016168231A1

公开(公告)日：2016-10-20

申请号：PCT/US2016/027189

申请日：2016-04-13

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： PANDEY, Prativa ,  REISS, Brian ,  WHITE, Michael

IPC: H01L21/304 ,  B24B37/24

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/76898

Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a sapphire substrate. The composition contains a diamond abrasive and a pH adjuster. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Abstract translation: 本发明提供化学机械抛光组合物和化学机械抛光蓝宝石衬底的方法。 该组合物含有金刚石研磨剂和pH调节剂。 该方法包括使基底与抛光垫和化学 - 机械抛光组合物接触，使抛光垫和抛光组合物相对于基底移动，并研磨基底的至少一部分以抛光基底。

公开(公告)号：WO2015084607A1

公开(公告)日：2015-06-11

申请号：PCT/US2014/066786

申请日：2014-11-21

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： ZHANG, Ke ,  WHITE, Michael ,  LEE, Tsung-Ho ,  GRUMBINE, Steven ,  LAU, Hon Wu

IPC: H01L21/304

CPC classification number: C09G1/02 ,  C09G1/18 ,  C23F3/06

Abstract: Chemical mechanical polishing (CMP) compositions and methods for planarizing a nickel phosphorus (NiP) substrate are described. A NiP CMP method comprises abrading a surface of the substrate with a CMP composition. The CMP composition comprises a colloidal silica abrasive suspended in an aqueous carrier having a pH of less than 2, and containing a primary oxidizing agent comprising hydrogen peroxide, a secondary oxidizing agent comprising a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide, a chelating agent, and glycine. The chelating agent comprises two or three carboxylic acid substituents capable of chelating to the metal ion of the secondary oxidizing agent.

Abstract translation: 描述了用于平面化镍磷（NiP）衬底的化学机械抛光（CMP）组合物和方法。 NiP CMP方法包括用CMP组合物研磨衬底的表面。 CMP组合物包含悬浮在pH小于2的水性载体中的胶体二氧化硅磨料，并且含有包含过氧化氢的初级氧化剂，包含能够在NiP存在下可逆可氧化和还原的金属离子的二次氧化剂 和过氧化氢，螯合剂和甘氨酸。 螯合剂包含两个或三个能够与二次氧化剂的金属离子螯合的羧酸取代基。

公开(公告)号：WO2012099845A3

公开(公告)日：2012-07-26

申请号：PCT/US2012/021495

申请日：2012-01-17

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： REISS, Brian ,  CLARK, John ,  JONES, Lamon ,  WHITE, Michael

IPC: C09K3/14 ,  H01L21/304

Abstract: The invention relates to a chemical-mechanical polishing composition comprising silica, one or more tetraalkylammonium salts, one or more bicarbonate salts, one or more alkali metal hydroxides, one or more aminophosphonic acids, one or more rate accelerator compounds, one or more polysaccharides, and water. The polishing composition reduces surface roughness and PSD of polished substrates. The invention further relates to a method of chemically-mechanically polishing a substrate, especially a silicon substrate, using the polishing composition described herein

公开(公告)号：WO2011130072A2

公开(公告)日：2011-10-20

申请号：PCT/US2011/031354

申请日：2011-04-06

Applicant: CABOT MICROELECTRONICS CORPORATION ,  REISS, Brian ,  WHITE, Michael ,  JONES, Lamon ,  CLARK, John

Inventor： REISS, Brian ,  WHITE, Michael ,  JONES, Lamon ,  CLARK, John

IPC: B24B37/02

CPC classification number: B24B1/00 ,  B24B9/065 ,  B24B37/02 ,  C09G1/02 ,  H01L21/02021 ,  H01L21/02024

Abstract: The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increase the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of 7 to 11. The invention further provides a method of polishing a substrate with the polishing composition.

Abstract translation: （a）二氧化硅，（b）一种或多种提高硅去除速率的化合物，（c）一种或多种四烷基铵盐，以及（d）水的抛光组合物， 其中所述抛光组合物具有7至11的pH。本发明还提供了用所述抛光组合物抛光基材的方法。

公开(公告)号：WO2011034808A3

公开(公告)日：2011-03-24

申请号：PCT/US2010/048587

申请日：2010-09-13

Applicant: CABOT MICROELECTRONICS CORPORATION ,  REISS, Brian ,  CLARK, John ,  JONES, Lamon ,  GILLILAND, Jeffrey ,  WHITE, Michael

Inventor： REISS, Brian ,  CLARK, John ,  JONES, Lamon ,  GILLILAND, Jeffrey ,  WHITE, Michael

IPC: C09K3/14 ,  H01L21/304

Abstract: The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increase the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of 7 to 11. The invention further provides a method of polishing a substrate with the polishing composition.