公开(公告)号：WO2012041341A1

公开(公告)日：2012-04-05

申请号：PCT/EP2010/005949

申请日：2010-09-30

Applicant: CARL ZEISS SMT GMBH ,  GRÄUPNER, Paul ,  CONRADI, Olaf ,  ZACZEK, Christoph ,  ULRICH, Wilhelm ,  BEIERL, Helmut ,  GRUNER, Toralf ,  GRÄSCHUS, Volker

Inventor： GRÄUPNER, Paul ,  CONRADI, Olaf ,  ZACZEK, Christoph ,  ULRICH, Wilhelm ,  BEIERL, Helmut ,  GRUNER, Toralf ,  GRÄSCHUS, Volker

IPC: G03F7/20

CPC classification number: G03F7/70191 ,  G03F7/70308

Abstract: A projection exposure system comprises an illumination system (ILL) configured to receive primary radiation with operating wavelength λ generated by a primary radiation source (S) and to form the primary radiation to generate illumination radiation incident on a mask (M) providing a prescribed pattern (PAT) and a projection objective (PO) configured to project an image of the pattern arranged in an object surface (OS) of the projection objective onto a radiation-sensitive substrate (W) arranged in an image surface (IS) of the projection objective at an image-side numerical aperture NA. An angle-selective filter arrangement (FA) is arranged at or close to a field surface of the projection objective in a projection beam path optically downstream of the object surface. The angle- selective filter arrangement is effective to filter radiation incident on the filter arrangement according to an angle-selective filter function. The filter function comprises a pass band (PB) with relatively high transmittance of intensity of incident radiation for angles of incidence smaller than a cut-off angle of incidence AOI CUT , and a stop band (SB) with relatively low transmittance of intensity of incident radiation for angles of incidence greater than the cut-off angle of incidence AOI CUT . The condition AOI CUT = arcsin (NA * | β | ) holds, with β being a magnification of an image formation between the field surface at or adjacent to the filter plane and the image surface of the projection objective.

Abstract translation: 投影曝光系统包括被配置为接收工作波长λ的初级辐射的照明系统（ILL） 由主辐射源（S）产生并且形成主辐射以产生入射到提供规定图案（PAT）的掩模（M）上的照射辐射和投影物镜（P），投影物镜（PO）被配置为投影布置在 将投影物镜的物体表面（OS）放置在布置在像侧数值孔径NA处的投影物镜的图像表面（IS）中的辐射敏感衬底（W）上。 角度选择性滤光器布置（FA）布置在投影物镜的场表面或靠近物体表面光学下游的投影光束路径中。 角度选择滤波器装置可以根据角度选择滤波器的功能对入射到滤波器装置上的辐射进行滤波。 滤波器功能包括对入射角小于入射角AOICUT的入射辐射强度具有较高透射率的通带（PB），以及入射辐射强度相对较低透射率的阻带（SB） 对于入射角大于截止入射角AOICUT。 条件AOICUT = arcsin（NA * |ß|）成立，其中ß是在滤波器平面处或与滤光片平面相邻的场表面与投影物镜的图像表面之间的图像形成的放大率。

公开(公告)号：WO2014086905A1

公开(公告)日：2014-06-12

申请号：PCT/EP2013/075620

申请日：2013-12-05

Applicant: CARL ZEISS SMT GMBH ,  WABRA, Norbert ,  BITTNER, Boris ,  VON HODENBERG, Martin ,  ENKISCH, Hartmut ,  MÜLLENDER, Stephan ,  CONRADI, Olaf

Inventor： WABRA, Norbert ,  BITTNER, Boris ,  VON HODENBERG, Martin ,  ENKISCH, Hartmut ,  MÜLLENDER, Stephan ,  CONRADI, Olaf

IPC: G03F7/20 ,  G02B5/08 ,  G21K1/06 ,  G03F1/22

CPC classification number: G03F7/702 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/0891 ,  G02B17/0663 ,  G02B27/1033 ,  G03F7/70308 ,  G03F7/70316 ,  G03F7/70916 ,  G03F7/70958 ,  G21K1/062

Abstract: The invention relates to a reflective optical element of an optical system for EUV lithography as well as to a method of manufacturing a reflective optical element of an optical system for EUV lithography, said reflective optical element (20) comprising a multilayer system (23, 83) for reflecting an incident electromagnetic wave having an operating wavelength in the EUV range, the reflected wave having a phase φ, and a capping layer (25, 85) made from a capping layer material, wherein the method comprises the following steps: determining, for said capping layer material, a dependency according to which the phase of the reflected wave varies with the thickness of the capping layer, determining a linearity-region in said dependency in which the phase of the reflected wave varies substantially linearly with the thickness of the capping layer (25, 85), and creating a thickness profile in said capping layer (25, 85) such that both the maximum thickness and the minimum thickness in said thickness profile are in said linearity-region.

Abstract translation: 本发明涉及用于EUV光刻的光学系统的反射光学元件以及制造用于EUV光刻的光学系统的反射光学元件的方法，所述反射光学元件（20）包括多层系统（23,83 ），用于反射具有在EUV范围内的工作波长的入射电磁波，所述反射波具有相位和由覆盖层材料制成的覆盖层（25,85），其中所述方法包括以下步骤：确定 对于所述覆盖层材料，依赖于反射波的相位随着覆盖层的厚度而变化的依赖性，确定所述依赖性中的线性区域，其中反射波的相位基本上以 封盖层（25,85），并且在所述封盖层（25,85）中产生厚度分布，使得所述封盖层（25,85）中的最大厚度和最小厚度 厚度分布在所述线性区域中。

公开(公告)号：WO2014012912A1

公开(公告)日：2014-01-23

申请号：PCT/EP2013/064963

申请日：2013-07-16

Applicant: CARL ZEISS SMT GMBH

Inventor： ZIMMERMANN, Jörg ,  STÜTZLE, Ralf ,  GRÄUPNER, Paul ,  CONRADI, Olaf

IPC: G03F7/20 ,  G02B26/08

CPC classification number: G03F7/70141 ,  G02B26/0833 ,  G03F7/70075 ,  G03F7/70116 ,  G03F7/70191 ,  G03F7/702

Abstract: Verfahren zum Einstellen eines Beleuchtungssettings in einer Beleuchtungsoptik (4) mit mindestens einer steuerbaren Korrektureinrichtung (23, 27), welche eine Vielzahl von verstellbaren Korrektur-Elementen zur Beeinflussung der Transmission aufweist, wobei das Beleuchtungssetting zur Anpassung eines vorgegebenen Abbildungs-Parameters im Bereich eines Bildfelds (8) variiert wird.

Abstract translation: 一种用于在照明光学系统（4）具有至少一个可控制的校正装置（23，27）调节的照明设置，具有多个可调节的校正元件的用于影响传输，方法，其中，所述照明设置用于在图像场的区域调整的预定的成像参数 （8）是变化的。

公开(公告)号：WO2012097833A1

公开(公告)日：2012-07-26

申请号：PCT/EP2011/000225

申请日：2011-01-20

Applicant: CARL ZEISS SMT GMBH ,  CONRADI, Olaf ,  TOTZECK, Michael ,  LÖRING, Ulrich ,  JÜRGENS, Dirk ,  MÜLLER, Ralf ,  WALD, Christian

Inventor： CONRADI, Olaf ,  TOTZECK, Michael ,  LÖRING, Ulrich ,  JÜRGENS, Dirk ,  MÜLLER, Ralf ,  WALD, Christian

IPC: G03F7/20

CPC classification number: G03F7/70891 ,  G03F7/70141 ,  G03F7/70483 ,  G03F7/70516 ,  G03F7/708

Abstract: A method of operating a projection exposure tool (10) for microlithography is provided. The projection exposure tool (10) has a projection objective (26) for imaging object structures on a mask (20) into an image plane (28) using electromagnetic radiation (13, 13a, 13b), during which imaging the electromagnetic radiation (13b) causes a change in optical properties of the projection objective (26). The method comprises the steps of: providing the layout of the object structures on the mask (20) to be imaged and classifying the object structures according to their type of structure, calculating the change in the optical properties of the projection objective (26) effected during the imaging process on the basis of the classification of the object structures, and using the projection exposure tool (10) for imaging the object structures into the image plane (28), wherein the imaging behavior of the projection exposure tool (10) is adjusted on the basis of the calculated change of the optical properties in order to at least partly compensate for the change of the optical properties of the projection objective (26) caused by the electromagnetic radiation (13, 13a, 13b) during the imaging process.

Abstract translation: 提供了一种操作用于微光刻的投影曝光工具（10）的方法。 投影曝光工具（10）具有用于使用电磁辐射（13,13a，13b）将掩模（20）上的物体结构成像到图像平面（28）中的投影物镜（26），在此期间对电磁辐射（13b）进行成像 ）导致投影物镜（26）的光学特性的变化。 该方法包括以下步骤：在要成像的掩模（20）上提供对象结构的布局，并根据其结构类型对对象结构进行分类，计算投影物镜（26）的光学特性的变化 在所述成像处理期间，基于所述物体结构的分类，以及使用所述投影曝光工具（10）将所述物体结构成像到所述图像平面（28）中，其中所述投影曝光工具（10）的成像特性为 基于所计算的光学特性的变化进行调整，以至少部分地补偿由成像过程中的电磁辐射（13,13a，13b）引起的投影物镜（26）的光学特性的变化。