Abstract:
A method for joining quartz pieces using metallic aluminum as the joining element. The aluminum may be placed between two quartz pieces and the assembly may be heated in the range of 500C to 650C. The joining atmosphere may be non-oxygenated. A method for the joining of quartz pieces which may include barrier layers on the quartz pieces. The barrier layers may be resistant to aluminum diffusion and may be of a metal oxide or metal nitride. The quartz pieces with the barrier layers may then be joined at temperatures higher than 650C and less than 1200C. A device such as an RF antenna or electrode in support of semiconductor processing using joined quartz pieces wherein the aluminum joining layer which has joined the pieces and also functions as antenna electrode.
Abstract:
A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.
Abstract:
An electrical feedthrough or termination unit that includes a ceramic body and a hollow aluminum structure having a first portion extending into a bore in the first end of the ceramic body and brazed to the inner surface of the bore to form a hermetic seal between the hollow aluminum structure and the ceramic body. The hollow aluminum structure has a second portion extending from the ceramic body. An electrical conductor has a first end portion extending through the hollow aluminum structure and a second end portion extending to the second end of the ceramic body. A method for the making an insulated electrical feedthrough or electrical termination unit is provided.
Abstract:
A method for joining quartz pieces using metallic aluminum as the joining element. The aluminum may be placed between two quartz pieces and the assembly may be heated in the range of 500C to 650C. The joining atmosphere may be non-oxygenated. A method for the joining of quartz pieces which may include barrier layers on the quartz pieces. The barrier layers may be resistant to aluminum diffusion and may be of a metal oxide or metal nitride. The quartz pieces with the barrier layers may then be joined at temperatures higher than 650C and less than 1200C. A device such as an RF antenna or electrode in support of semiconductor processing using joined quartz pieces wherein the aluminum joining layer which has joined the pieces and also functions as antenna electrode.
Abstract:
An electrical feedthrough or termination unit that includes a ceramic body and a hollow aluminum structure having a first portion extending into a bore in the first end of the ceramic body and brazed to the inner surface of the bore to form a hermetic seal between the hollow aluminum structure and the ceramic body. The hollow aluminum structure has a second portion extending from the ceramic body. An electrical conductor has a first end portion extending through the hollow aluminum structure and a second end portion extending to the second end of the ceramic body. A method for the making an insulated electrical feedthrough or electrical termination unit is provided.
Abstract:
An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500C to 750C. The top surface may be sapphire. The top surface can be attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500C to 750C is provided.