SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
    4.
    发明申请
    SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE 审中-公开
    半导体结构和制造方法

    公开(公告)号:WO2009076509A2

    公开(公告)日:2009-06-18

    申请号:PCT/US2008086383

    申请日:2008-12-11

    CPC classification number: H01L21/76237 H01L21/76232

    Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed.

    Abstract translation: 在各种实施例中,公开了制造这些结构的半导体结构和方法。 在一个实施例中,结构包括电介质材料和位于衬底表面下方的空隙。 该结构进一步包括在第一空隙上的介电材料上的掺杂介电材料,其中介电材料的至少一部分介于至少一部分衬底和至少一部分掺杂介电材料之间。 描述并要求保护其他实施例。

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