Abstract:
Systems and methods are provided for the embedding of thin chips. A well region is generated in a substrate that includes a conductive material disposed on a flexible polymer. The standoff well region can be generated by pattern the conductive material, where the thin chip is embedded in the standoff well region. A cavity can be generated in the polymer layer to form a polymer well region, where the thin chip is embedded in the polymer well region. In an example, at least two well regions can be generated in a substrate that includes a conductive material disposed on a flexible polymer. At least one of the at least two well regions can be a standoff well region.
Abstract:
Various aspects of an approach for routing die signals in an interior portion of a die (152) using external interconnects (202+222+212) are described herein. The approach provides for contacts (102, 112) coupled to circuits in the interior portion of the die (152), where the contacts (102, 112) are exposed to an exterior portion of the die (152). The external interconnects (202+222+212) are configured to couple these contacts (102, 112) so that signals from the circuits in the interior portion of the die (152) may be routed externally to the die (152) to reinsert them back into the die (152). In various aspects of the disclosed approach, the external interconnects (202+222+212) are protected by a packaging (252) for the die (152). A testing circuit configured to couple the circuits during a testing mode may be foreseen in the interior portion of the die (152).
Abstract:
A circuit arrangement according to the invention has a substrate (10), a connecting element (18) and a chip (16). The substrate (10) has an at least partial metallisation (11) on the surface thereof. The connecting element (18) is applied to the metallisation (11). The chip (16) is applied to the connecting element (18). The connecting element (18) has an electrically non-conductive glass layer (14) which is applied directly to the metallisation (11), and an adhesive layer (15) between the chip (16) and the glass layer (14).
Abstract:
The disclosure relates to a two-part dual-cure adhesive composition comprising a first Part (A) comprising a radiation polymerizable polyisocyanate prepolymer and a second Part (B) comprising a polyol. The disclosed adhesive can be used on substrates with electronic components to make electronic assemblies.
Abstract:
In accordance with certain embodiments, light emitting diodes, i.e. semiconductor dies (210) are embedded within polymeric binder (420; 230) which contains in a specific embodment phosphor, to form, e.g., freestanding white light-emitting dies and/or composite wafers containing multiple light-emitting dies (210) embedded in a single volume of binder (420; 230). In the methods of certain embodiments the contacts of the semicondctor dies (210) remain at least partially uncoated by the binder, or are reexposed to ambient after applying the binder (420; 230) before the dies are separated.
Abstract:
A method is disclosed for manufacturing a first-plating-then-etching quad flat no-lead (QFN) packaging structure. The method includes providing a metal substrate, forming a first photoresist film on a top surface of the metal substrate, and forming a plating pattern in the first photoresist film using photolithography. The method also includes forming a first metal layer containing a plurality of inner leads by a first multi-layer electrical plating process using the plating pattern in the first photoresist film as a mask such that a lead pitch of the plurality of inner leads is significantly reduced. Further, the method includes attaching at least one die in a predetermined region on the top surface of the metal substrate, connecting the die and the plurality of inner leads using metal wires by a wire bonding process, and sealing the die, the plurality of inner leads, and metal wires with a molding compound. The method also includes forming a second metal layer on a back surface of the metal substrate by a second multi-layer electrical plating process and, after forming the second metal layer, etching the metal substrate from the back surface of the metal substrate to form a plurality of I/O pads with pre-formed second metal layer corresponding to the plurality of inner leads. Further, the method includes filling sealant in etched areas at the back surface of the metal substrate.
Abstract:
본 발명에 의하면 고주파 전자기장을 이용한 전자부품 접속방법 및 장치가 제공된다. 본 발명의 일 실시예에 따른 상기 방법은 접속시키고자 하는 전자부품에 구비된 접착제에 고주파를 인가하여 자체적으로 발열시킴으로 전기적 및 기계적으로 접합시키는 단계를 포함하는 것을 특징으로 하며, 본 발명에 따른 전자부품 접속방법은 고주파의 전자기파를 이용하여 인터포저 및/또는 폴리머 접착제에 함유된 특정 성분을 발열시킨다. 외부의 열원을 사용하지 않으므로, 저온에서 부품간 접속이 가능하고, 경제적이다. 또한, 접합구조 전체를 진동시키는 초음파 접속방식에 비하여, 화학적 쌍극자를 가지는 특정 성분 등을 고주파의 전자기장으로 발열시키는 본 발명은 외부 진동에 따른 공정 제약이 없다. 아울러, 고정된 진동자를 사용하는 초음파 방식과 달리, 사용자가 공정 조건에 따라 주파수 변조가 용이하므로, 물질 종류에 따라 다양한 조건으로 부품간 접속을 진행할 수 있다.
Abstract:
In accordance with certain embodiments, a semiconductor die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the semiconductor die or non-coplanarity of the semiconductor die contacts.