公开(公告)号：WO2004079043A3

公开(公告)日：2004-09-16

申请号：PCT/US2004/005526

申请日：2004-02-25

Applicant: CREE, INC.

Inventor： NAKAMURA, Shuji ,  DENBAARS, Steven ,  BATRES, Max ,  COULTER, Michael

IPC: C23C16/458

Abstract: The present invention discloses a susceptor mounting assembly for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers, that is particularly adapted for mounting a susceptor in an inverted type reactor chamber. It includes a tower (44) having an upper and lower end (45, 43) with the upper end (45) mounted to the top inside surface of the reactor chamber (162) and a susceptor (52) is arranged at the tower's lower end (43). Semiconductor wafers (68) are held adjacent to the susceptor (52) such that heat from the susceptor (52) passes into wafers (68). A second embodiment of a susceptor mounting assembly according to the invention also comprises a tower (104) having an upper and lower end (103, 108). The tower's upper end (103) is mounted to the top inside surface of the reactor chamber (162). A susceptor (110) is housed within a cup (106) and the cup (106) is mounted to the tower's lower end (108).

公开(公告)号：WO2005117152A1

公开(公告)日：2005-12-08

申请号：PCT/US2005/016987

申请日：2005-05-17

Applicant: CREE, INC.

Inventor： NAKAMURA, Shuji ,  DENBAARS, Steven ,  EDMOND, John ,  MISHRA, Umesh ,  SWOBODA, Charles

IPC: H01L33/00

CPC classification number: H01L33/465 ,  H01L33/0079 ,  H01L33/105 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

Abstract: A method according to the present invention for fabricating high light extraction photonic device comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.

Abstract translation: 根据本发明的用于制造高光提取光子器件的方法，包括在衬底上生长外延半导体结构并在外延半导体结构上沉积第一镜层，使得外延半导体结构夹在第一镜层和衬底之间 。 倒装芯片安装外延半导体结构，其第一反射镜和衬底位于基座上，使得外延半导体器件结构夹在基座和衬底之间。 然后通过向衬底引入蚀刻环境，从衬底去除衬底。 第二镜层沉积在外延半导体结构上，使得外延半导体结构夹在第一和第二镜层之间。 根据本发明的装置包括安装到底座的谐振腔发光二极管（RCLED）。

公开(公告)号：WO2003098667A1

公开(公告)日：2003-11-27

申请号：PCT/US2003/013648

申请日：2003-04-30

Applicant: CREE INC.

Inventor： NAKAMURA, Shuji ,  DENBAARS, Steven ,  BATRES, Max ,  COULTER, Micheal

IPC: H01L21/00

CPC classification number: H01L21/67103 ,  H01L21/68771

Abstract: A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

Abstract translation: 公开了一种用于在晶片上的外延层生长期间将半导体晶片保持在MOCVD反应器中的基座。 感受体包括由在高温下具有低导热性的材料制成的基座结构，并且具有一个或多个用于容纳传热塞的板孔。 插头由高温下具有高导热性的材料制成，以将热量传递到半导体晶片。 还公开了一种使用根据本发明的基座的金属有机化学气相沉积反应器。

公开(公告)号：WO2005112138A1

公开(公告)日：2005-11-24

申请号：PCT/US2005/009327

申请日：2005-03-22

Applicant: CREE, INC.

Inventor： NAKAMURA, Shuji ,  DENBAARS, Steven

IPC: H01L33/00

CPC classification number: H01L33/465 ,  H01L33/0079 ,  H01L33/105

Abstract: One embodiment of a method according to the present invention for fabricating a high light extraction photonic device comprises growing a lift-off layer on a substrate and growing an epitaxial semiconductor device structure on the lift-off layer such that the lift-off layer is sandwiched between said device structure and substrate. The epitaxial semiconductor structure comprises an emitter adapted to emit light in response to a bias. The device structure, lift-off layer and substrate is flip-chip mounted on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and lift-off layer. The lift-off layer is removed to separate the substrate from the device structure. Different removal methods can be used such as removal by a photo electrochemical etch or by illuminating the lift-off layer with laser light.

Abstract translation: 根据本发明的用于制造高光提取光子器件的方法的一个实施例包括在衬底上生长剥离层并在剥离层上生长外延半导体器件结构，使得剥离层夹在 在所述器件结构和衬底之间。 外延半导体结构包括适于响应于偏压而发光的发射极。 器件结构，剥离层和衬底被倒装安装在基座上，使得外延半导体器件结构夹在子安装座和剥离层之间。 去除剥离层以将衬底与器件结构分离。 可以使用不同的去除方法，例如通过光电化学蚀刻去除或通过用激光照射剥离层。