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    METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT
    1.
    发明申请
    METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT 审中-公开
    用于生产半导体元件和半导体元件的方法

    公开(公告)号：WO2016120398A1

    公开(公告)日：2016-08-04

    申请号：PCT/EP2016/051827

    申请日：2016-01-28

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  X-CELEPRINT LIMITED

    Inventor： MEITL, Matthew ,  BOWER, Christopher ,  VARGHESE, Tansen

    IPC: H01L33/00 ,  H01L33/38

    CPC classification number: H01L33/22 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/382 ,  H01L33/465 ,  H01L2933/0033 ,  H01L2933/0058

    Abstract: A method for producing a plurality of semiconductor components is provided, wherein a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer and an active region is applied on a substrate. A contact structure is formed for electrically contacting the first and the second semiconductor layers. An auxiliary substrate is applied on the semiconductor layer sequence, so that the semiconductor layer sequence is arranged between the auxiliary substrate and the substrate. In a subsequent step, the substrate is removed from the semiconductor layer sequence. The semiconductor layer sequence is structured into a plurality of semiconductor bodies by forming at least one trench separating the semiconductor bodies. An anchoring layer is formed to cover the trench and vertical surfaces of the semiconductor bodies. A plurality of tethers is formed by structuring the anchoring layer in regions covering the trench. The auxiliary substrate is locally detached from the semiconductor bodies, wherein the tethers remain attached to the auxiliary substrate. At least one semiconductor body is selectively picked up by separating the tethers from the auxiliary substrate. Moreover, a semiconductor component produced by said method is provided.

    Abstract translation: 提供一种用于制造多个半导体部件的方法，其中将具有第一半导体层，第二半导体层和有源区域的半导体层序列施加在基板上。 形成用于电接触第一和第二半导体层的接触结构。 在半导体层序列上施加辅助衬底，使得半导体层序列布置在辅助衬底和衬底之间。 在随后的步骤中，从半导体层序列中去除衬底。 半导体层序列通过形成分离半导体本体的至少一个沟槽而构成多个半导体本体。 形成锚固层以覆盖半导体主体的沟槽和垂直表面。 通过在覆盖沟槽的区域中构造锚定层来形成多个系绳。 辅助基板与半导体本体分离，其中系绳保持附着在辅助基板上。 通过将绳索与辅助基板分开来选择性地拾取至少一个半导体体。 此外，提供了通过所述方法制造的半导体部件。

    LUMINESZENZDIODE MIT EINER REFLEXIONSMINDERNDEN SCHICHTENFOLGE
    5.
    发明申请
    LUMINESZENZDIODE MIT EINER REFLEXIONSMINDERNDEN SCHICHTENFOLGE 审中-公开
    发光二极管用反射减少层SEQUENCE

    公开(公告)号：WO2006012818A2

    公开(公告)日：2006-02-09

    申请号：PCT/DE2005/001065

    申请日：2005-06-15

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  PIETZONKA, Ines ,  SCHMID, Wolfgang ,  WIRTH, Ralph

    Inventor： PIETZONKA, Ines ,  SCHMID, Wolfgang ,  WIRTH, Ralph

    IPC: H01L33/00

    CPC classification number: H01L33/105 ,  H01L33/465

    Abstract: Bei einer Lumineszenzdiode (1) mit einer aktiven Zone (7), die elektromagnetische Strahlung in eine Hauptstrahlrichtung (15) emittiert, wobei der aktiven Zone (7) in der Hauptstrahlrichtung (15) eine reflexionsmindernde Schichtenfolge (16) nachgeordnet ist, enthält die reflexionsmindernde Schichtenfolge einen aus mindestens einem Schichtpaar (11, 12) gebildeten DBR-Spiegel (13), eine dem DBR-Spiegel (13) in der Hauptstrahlrichtung (15) nachfolgende Vergütungsschicht (9) und eine zwischen dem DBR-Spiegel (13) und der Vergütungsschicht (9) angeordnete Zwischenschicht (14).

    Abstract translation: 在发光二极管（1）与活性区（7）中，在主辐射方向上的电磁辐射（15）被发射，其中，所述有源区（7）具有反射抑制层序列（16）中的主光束方向（15）的下游布置，包含防反射 层序列的至少一对层（11，12）形成的DBR镜（13），在主波束方向的DBR反射镜（13）（15）随后的补偿层（9）和所述DBR反射镜（13）和所述间 补偿层（9）布置中间层（14）。

    METHOD FOR FABRICATING GROUP III NITRIDE DEVICES AND DEVICES FABRICATED USING METHOD
    6.
    发明申请
    METHOD FOR FABRICATING GROUP III NITRIDE DEVICES AND DEVICES FABRICATED USING METHOD 审中-公开
    用于制备III族氮化物装置的方法和使用方法织造的装置

    公开(公告)号：WO2005117152A1

    公开(公告)日：2005-12-08

    申请号：PCT/US2005/016987

    申请日：2005-05-17

    Applicant: CREE, INC.

    Inventor： NAKAMURA, Shuji ,  DENBAARS, Steven ,  EDMOND, John ,  MISHRA, Umesh ,  SWOBODA, Charles

    IPC: H01L33/00

    CPC classification number: H01L33/465 ,  H01L33/0079 ,  H01L33/105 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

    Abstract: A method according to the present invention for fabricating high light extraction photonic device comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.

    Abstract translation: 根据本发明的用于制造高光提取光子器件的方法，包括在衬底上生长外延半导体结构并在外延半导体结构上沉积第一镜层，使得外延半导体结构夹在第一镜层和衬底之间 。 倒装芯片安装外延半导体结构，其第一反射镜和衬底位于基座上，使得外延半导体器件结构夹在基座和衬底之间。 然后通过向衬底引入蚀刻环境，从衬底去除衬底。 第二镜层沉积在外延半导体结构上，使得外延半导体结构夹在第一和第二镜层之间。 根据本发明的装置包括安装到底座的谐振腔发光二极管（RCLED）。

    HIGH CONTRAST REFLECTIVE MIRRORS
    7.
    发明申请
    HIGH CONTRAST REFLECTIVE MIRRORS 审中-公开
    高对比度反光镜

    公开(公告)号：WO02089268A3

    公开(公告)日：2003-08-28

    申请号：PCT/US0222500

    申请日：2002-02-21

    Applicant: MOTOROLA INC

    Inventor： EISENBEISER KURT W

    IPC: H01L33/10 ,  H01L33/46 ,  H01S5/183 ,  G02B5/08 ,  H01L33/00 ,  H01L51/20

    CPC classification number: H01S5/183 ,  H01L33/105 ,  H01L33/465 ,  H01S5/0261

    Abstract: A high contrast reflective mirror (24) includes a plurality of alternating first monocrystalline layers (14) and second monocrystalline layers (16). The first monocrystalline layers are formed of an oxide material that has a cubic structure and a first index of refraction. The second monocrystalline layers are formed of a semiconductor material that has a second index of refraction. The first index of refraction and the second index of refraction differ by at least about 0.5

    Abstract translation: 高对比度反射镜（24）包括多个交替的第一单晶层（14）和第二单晶层（16）。 第一单晶层由具有立方结构和第一折射率的氧化物材料形成。 第二单晶层由具有第二折射率的半导体材料形成。 第一折射率和第二折射率相差至少约0.5

    PHASE SHIFTED MICROCAVITIES
    8.
    发明申请
    PHASE SHIFTED MICROCAVITIES 审中-公开
    相变微量

    公开(公告)号：WO2003007028A2

    公开(公告)日：2003-01-23

    申请号：PCT/IB2002/002794

    申请日：2002-07-15

    Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) ,  STANLEY, Ross, Peter

    Inventor： STANLEY, Ross, Peter

    IPC: G02B5/00

    CPC classification number: H01S5/18361 ,  H01L31/0232 ,  H01L33/105 ,  H01L33/465 ,  H01S5/1039 ,  H01S5/124 ,  H01S5/18358 ,  H01S5/18372 ,  H01S5/3211

    Abstract: An optically-active multi-layer dielectric structure comprises an optically active zone between two mirrors forming a Fabry-Perot microcavity. The optically active zone comprises an optically active material of wavelength λ centred in a layer of high refractory index medium of optical thickness less than λ/2 surrounded by two layers of low refractory index medium each of optical thickness less than λ/4,the combined optical thickness of said three layers making up the optically active zone being less than or equal to 3λ/4. This structure behaves like a λ/2 high index cavity except that there is a maximum of the optical field in the centre of the cavity instead of the usual node. This phase-shifted structure is useful for planar light emitting devices, vertical cavity lasers, and photo-detectors.

    Abstract translation: 光学活性多层电介质结构包括形成法布里 - 珀罗微腔的两个反射镜之间的光学活性区。 光学活性区包括波长为λ的光学活性材料，其中心层厚度小于λ/ 2的高耐火材料指数介质层，该层由光学厚度小于λλ/ 4的两层低难溶指数介质包围，每层厚度小于λλ 构成光学活性区域的所述三层的光学厚度小于或等于3λ/ 4。 该结构的行为类似于λ/ 2高折射率腔，除了在腔的中心具有最大的光场而不是通常的节点。 这种相移结构对于平面发光器件，垂直腔激光器和光电检测器是有用的。

    ENCAPSULATED OPTOELECTRONIC DEVICES WITH CONTROLLED PROPERTIES
    9.
    发明申请
    ENCAPSULATED OPTOELECTRONIC DEVICES WITH CONTROLLED PROPERTIES 审中-公开
    具有控制特性的封装光电器件

    公开(公告)号：WO00079659A1

    公开(公告)日：2000-12-28

    申请号：PCT/US2000/007766

    申请日：2000-03-24

    IPC: H01L33/10 ,  H01L33/44 ,  H01L33/46 ,  H01S5/022 ,  H01S5/028 ,  H01S5/183 ,  H01L31/0203 ,  H01L33/00

    CPC classification number: H01L33/44 ,  H01L33/105 ,  H01L33/465 ,  H01L2224/48091 ,  H01S5/0042 ,  H01S5/02228 ,  H01S5/02284 ,  H01S5/02296 ,  H01S5/0264 ,  H01S5/0427 ,  H01S5/18361 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/18391 ,  H01L2924/00014

    Abstract: An optoelectronic device, such as a VCSEL, is disclosed whose transmission does not change upon encapsulation by a material such as plastic, epoxy or other suitable encapsulant with a known index of refraction. The surface reflection of the VCSEL surface is very different depending on whether it is terminated in air or the encapsulant, with a much larger reflection in the case of air. It is known that the surface reflection can be made out of phase with the rest of the mirror, effectively increasing the transmission. The amount of the transmission increase can be adjusted by controlling the thickness of the surface layer. Once the VCSEL is encapsulated, the surface reflection is reduced, and the transmission at the facet is increased but the dephased reflection is also reduced. Depositing a surface layer whose index of refraction is similar to the encapsulant, and adjusting the surface layer thickness correctly, the overall transmission from the laser into the terminating material is unchanged, be it air or encapsulation. As a result, the laser properties such as slope efficiency and threshold current are unchanged upon encapsulation. The same procedure may be applied to devices other than VCSELs such as other types of lasers, LEDs, and resonant cavity photodetectors to achieve encapsulated optoelectronic components with controlled properties that remain unchanged upon encapsulation.

    Abstract translation: 公开了一种诸如VCSEL的光电子器件，其透射率通过诸如塑料，环氧树脂或具有已知折射率的其它合适的密封剂的材料进行封装时不发生变化。 VCSEL表面的表面反射是非常不同的，这取决于它是否在空气或密封剂中终止，在空气的情况下反射更大。 已知表面反射可以与反射镜的其余部分不同相，有效地增加了透射率。 可以通过控制表面层的厚度来调节透射增加量。 一旦VCSEL被封装，则表面反射减小，并且小面处的透射增加，而反相反射也减小。 沉积折射率类似于密封剂的表面层，并且正确地调节表面层厚度，从激光器到终端材料的总体传输是不变的，无论是空气还是封装。 结果，在封装时，诸如斜率效率和阈值电流的激光特性不变。 对VCSELs以外的器件，例如其它类型的激光器，LED和谐振腔光电探测器也可以采用相同的步骤，以实现封装的光电元件，其具有在封装时保持不变的受控特性。

    RESONANT OPTICAL CAVITY LIGHT EMITTING DEVICE
    10.
    发明申请
    RESONANT OPTICAL CAVITY LIGHT EMITTING DEVICE 审中-公开
    谐振腔光发射器件

    公开(公告)号：WO2017145026A1

    公开(公告)日：2017-08-31

    申请号：PCT/IB2017/050880

    申请日：2017-02-16

    Applicant: SILANNA UV TECHNOLOGIES PTE LTD

    Inventor： ATANACKOVIC, Petar

    IPC: H01L33/58 ,  H01L33/22 ,  H01L33/60 ,  H01L33/00

    CPC classification number: H01L33/105 ,  H01L33/0012 ,  H01L33/0025 ,  H01L33/0045 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46 ,  H01L33/465 ,  H01L2933/0025 ,  H01S5/18375 ,  H01S5/187 ,  H01S5/34333 ,  H01S2301/173

    Abstract: Resonant optical cavity light emitting devices and method of producing such devices are disclosed. The device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector has a metal composition comprising elemental aluminum. Using a three-dimensional electromagnetic spatial and temporal simulator, it is determined if an emission output at an exit plane relative to the substrate meets a predetermined criterion. The light emitting region is placed at a final separation distance from the reflector, where the final separation distance results in the predetermined criterion being met.

    Abstract translation: 公开了共振光学腔发光器件和制造这种器件的方法。 该器件包括衬底，第一间隔区域，发光区域，第二间隔区域和反射器。 发光区域被配置为发射目标发射深紫外波长，并且被定位在离反射器的分开距离处。 反射器具有包含元素铝的金属组合物。 使用三维电磁空间和时间模拟器，确定在出射面相对于衬底的发射输出是否满足预定标准。 发光区域被放置在与反射器的最终间隔距离处，其中最终间隔距离导致满足预定标准。

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