公开(公告)号：WO2004079043A3

公开(公告)日：2004-09-16

申请号：PCT/US2004/005526

申请日：2004-02-25

Applicant: CREE, INC.

Inventor： NAKAMURA, Shuji ,  DENBAARS, Steven ,  BATRES, Max ,  COULTER, Michael

IPC: C23C16/458

Abstract: The present invention discloses a susceptor mounting assembly for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers, that is particularly adapted for mounting a susceptor in an inverted type reactor chamber. It includes a tower (44) having an upper and lower end (45, 43) with the upper end (45) mounted to the top inside surface of the reactor chamber (162) and a susceptor (52) is arranged at the tower's lower end (43). Semiconductor wafers (68) are held adjacent to the susceptor (52) such that heat from the susceptor (52) passes into wafers (68). A second embodiment of a susceptor mounting assembly according to the invention also comprises a tower (104) having an upper and lower end (103, 108). The tower's upper end (103) is mounted to the top inside surface of the reactor chamber (162). A susceptor (110) is housed within a cup (106) and the cup (106) is mounted to the tower's lower end (108).

公开(公告)号：WO2006080958A1

公开(公告)日：2006-08-03

申请号：PCT/US2005/036552

申请日：2005-09-15

Applicant: CREE, INC.

Inventor： DENBAARS, Steven, P. ,  NAKAMURA, Shuji ,  BATRES, Max

IPC: H01L33/00

CPC classification number: H01L33/42 ,  H01L33/145 ,  H01L33/22 ,  H01L33/405

Abstract: An LED (10) having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region (18) between the p-type layer and the n-type layer, includes a confinement structure (20) that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure (20) is generally aligned with the contact (22) on the top and primary emission surface of the LED (10) and substantially prevents the emission of light from the area of the active region (18) that is coincident with the area of the confinement structure and the top-surface contact (22). The LED (10) may include a roughened emitting side surface (25) to further enhance light extraction.

Abstract translation: 具有相关联的p型接触的p型材料层的LED（10），具有相关联的n型接触的n型材料层以及p型层与n型接触之间的有源区（18） 型层包括在所述p型材料层和所述n型材料层之一内形成的约束结构（20）。 限制结构（20）通常与LED（10）的顶部和主要发射表面上的触点（22）对准，并且基本上防止来自与有源区域（18）重合的区域的光的发射 约束结构的面积和顶面接触面（22）。 LED（10）可以包括粗糙化的发射侧表面（25），以进一步增强光提取。

公开(公告)号：WO2006016955A1

公开(公告)日：2006-02-16

申请号：PCT/US2005/020603

申请日：2005-06-09

Applicant: CREE, INC.

Inventor： BATRES, Max ,  IBBETSON, James ,  LI, Ting ,  SAXLER, Adam, W.

IPC: H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2224/0401

Abstract: The surface morphology of an LED light emitting surface is changed by applying a reactive 'ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.

Abstract translation: 通过对发光表面施加反应性离子蚀刻（RIE）工艺来改变LED发光表面的表面形态。 在RIE工艺之前，通过使用锯片或掩模蚀刻技术切割到表面中，可以在发射表面上形成蚀刻特征，例如截顶棱锥。 也可以在RIE工艺之前在发射表面制造侧壁切口。 通过RIE工艺去除与锯切相关的光吸收损伤的材料层。 RIE工艺产生的表面形态可以使用非RIE工艺的各种各样的组合来进行仿真，例如砂光砂磨和粗糙化的材料层或颗粒的沉积，随后进行干蚀刻。

公开(公告)号：WO2003098667A1

公开(公告)日：2003-11-27

申请号：PCT/US2003/013648

申请日：2003-04-30

Applicant: CREE INC.

Inventor： NAKAMURA, Shuji ,  DENBAARS, Steven ,  BATRES, Max ,  COULTER, Micheal

IPC: H01L21/00

CPC classification number: H01L21/67103 ,  H01L21/68771

Abstract: A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

Abstract translation: 公开了一种用于在晶片上的外延层生长期间将半导体晶片保持在MOCVD反应器中的基座。 感受体包括由在高温下具有低导热性的材料制成的基座结构，并且具有一个或多个用于容纳传热塞的板孔。 插头由高温下具有高导热性的材料制成，以将热量传递到半导体晶片。 还公开了一种使用根据本发明的基座的金属有机化学气相沉积反应器。

公开(公告)号：WO2009064330A3

公开(公告)日：2009-05-22

申请号：PCT/US2008/010703

申请日：2008-09-11

Applicant: CREE, INC. ,  KELLER, Bernd ,  CHITNIS, Ashay ,  MEDENDORP, Nicholas, W., Jr. ,  IBBETSON, James ,  BATRES, Max

Inventor： KELLER, Bernd ,  CHITNIS, Ashay ,  MEDENDORP, Nicholas, W., Jr. ,  IBBETSON, James ,  BATRES, Max

IPC: H01L33/00

Abstract: A wire-bond free semiconductor device with two electrodes (422, 424) both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers (404, 406), each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source', obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers (426) or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device.