公开(公告)号：WO2008122430A9

公开(公告)日：2010-01-21

申请号：PCT/EP2008002738

申请日：2008-04-07

Applicant: FRAUNHOFER GES FORSCHUNG ,  TSCHEKALINSKIJ WLADIMIR ,  JUNGER STEPHAN ,  WEBER NORBERT

Inventor： TSCHEKALINSKIJ WLADIMIR ,  JUNGER STEPHAN ,  WEBER NORBERT

IPC: G02B21/00

CPC classification number: G02B27/58 ,  B82Y20/00 ,  G02B1/007 ,  G02B21/0004

公开(公告)号：WO0052424A8

公开(公告)日：2001-05-10

申请号：PCT/EP0000313

申请日：2000-01-17

Applicant: FRAUNHOFER GES FORSCHUNG

Inventor： HOHE HANS-PETER ,  WEBER NORBERT ,  SAUERER JOSEF

IPC: G01D3/02 ,  G01D5/14 ,  H01L43/04 ,  H01L43/06

CPC classification number: G01D3/02 ,  G01D5/142 ,  H01L43/04 ,  H01L43/065

Abstract: The invention relates to a hall sensor (1) comprising two opposite-lying power supply contact electrodes (7a, 7c) between which an active region (5) is defined. Said electrodes are provided for generating a current flow through the active region. The inventive hall sensor also comprises two opposite-lying voltage tapping contact electrodes (7b, 7d) for tapping a hall voltage, whereby a section of each contact electrode facing the active region (5) is shaped in such a way that the interfering influence of the contacts on the offset-reducing effect of the spinning current operation is reduced.

Abstract translation: 霍尔传感器（1）具有两个相对的电流供给接触电极（7A，7C），其之间的有源区（5），用于产生通过所述有源区和两个相对的Spannungsabgriffskontaktelektroden（7B，7D）攻丝的霍尔电流流动定义 电压，由此面对各自的接触电极的部分的有源区（5）被形成为使得在纺纱当前操作的偏移降低效果的触点的破坏性影响被降低。

公开(公告)号：WO2008125243A3

公开(公告)日：2008-12-18

申请号：PCT/EP2008002741

申请日：2008-04-07

Applicant: FRAUNHOFER GES FORSCHUNG ,  TSCHEKALINSKIJ WLADIMIR ,  JUNGER STEPHAN ,  WEBER NORBERT

Inventor： TSCHEKALINSKIJ WLADIMIR ,  JUNGER STEPHAN ,  WEBER NORBERT

IPC: H01L27/146 ,  G02B5/18

CPC classification number: B82Y20/00 ,  G02B5/008 ,  G02B6/1226 ,  H01L27/14621

Abstract: The invention relates to an integrated component (10) comprising a filter structure having at least two structured metal layers (32; 82), each of the at least two structured metal layers having a zone plate structure (14) to achieve a spectral filtering effect, and an optoelectronic component (16). The filter structure (12) and the optoelectronic component (16) are integrated into a semiconductor substrate (16) in such a manner that the optoelectronic component (16) is arranged in a field concentration area of the filter structure (12).

Abstract translation: 具有至少两个图案化的金属层（32; 82）的过滤器结构的集成部件（10），每个所述至少两个图案化金属层包括带片结构（14），以获得光谱滤波器的动作，和一个光电部件（16），其中 过滤器结构（12），并且在半导体衬底（16），这样的方式的光电部件（16）被集成，从而使光电元件（16）被布置在过滤器结构（12）的电场集中区域。

公开(公告)号：WO0054063A8

公开(公告)日：2001-06-21

申请号：PCT/EP0000316

申请日：2000-01-17

Applicant: FRAUNHOFER GES FORSCHUNG ,  HOHE HANS PETER ,  WEBER NORBERT ,  SAUERER JOSEF

Inventor： HOHE HANS-PETER ,  WEBER NORBERT ,  SAUERER JOSEF

IPC: G01R15/20 ,  G01R19/00 ,  G01R15/24

CPC classification number: G01R15/20

Abstract: The invention relates to a current measuring device for measuring an electric current using one or more conductors (L1, L2, L3) in an arrangement of n conductors, n being a natural number >/= 2. The device has n+1 sensors (S1 to S4) which are sensitive to magnetic fields and which are arranged in such a way that two sensors are adjacent to each conductor. The device provides a unit (12) for reading output signals from said sensors. The current measuring device also has a unit (10) for calculating the electric current using one or more of the conductors, based on the read output signals and coefficients which describe the influence of the electric currents that pass through each of the n conductors and the influence of a continuous magnetic field on the output signal from each of the magnetic field-sensitive sensors.

Abstract translation: 用于通过N个导体阵列的一个或多个导体（L1，L2，L3）测量电流，其中n是自然数> / = 2所述的电流测量装置，包括n + 1磁场敏感传感器（S1至S4），这种 被布置成使得两个磁场敏感传感器布置邻近相应的导体。 装置（12）用于读出的磁场敏感传感器的输出信号被提供。 另外，电流测量装置具有用于通过每个n个导体的和恒定的磁场对每个磁性的输出信号来计算经过的一个或多个读出输出信号，并且系数以电流的影响的基础上的导体的电流的装置（10），磁场敏感 传感器描述。

公开(公告)号：WO2008125278A3

公开(公告)日：2009-05-28

申请号：PCT/EP2008002853

申请日：2008-04-10

Applicant: FRAUNHOFER GES FORSCHUNG ,  OFFENBECK BERND ,  WEBER NORBERT

Inventor： OFFENBECK BERND ,  WEBER NORBERT

IPC: H05K1/14 ,  G02B6/42 ,  H05K1/18

CPC classification number: G02B6/4246 ,  G02B6/4204 ,  H05K1/144 ,  H05K1/182 ,  H05K2201/10121

Abstract: The invention relates to a device having a first optical component (102) on a first printed circuit board surface (104), a second optical component (106) on a second printed circuit board surface (108), wherein the first printed circuit board surface (104) and the second printed circuit board surface (108) are substantially disposed successively parallel to each other such that the first printed circuit board surface (104) and the second printed circuit board surface (108) point in the same normal direction (110), and wherein both the first optical component (102) and the second optical component (106) can be coupled to an optical interface positioned in a normal direction (110) behind the first and the second printed circuit board surfaces.

Abstract translation: 具有在第一印刷电路板表面（104），在第二印刷电路板表面（108）的第二光学组件（106）的第一光学组件（102）的装置，所述第一印刷电路板表面（104）和所述第二印刷电路板表面（108）基本上平行 被布置在相对于彼此，以使得具有所述第一印刷电路板表面（104）和在正常的（110）的相同方向上的第二印刷电路板表面（108）具有，并且其中所述第一光学组件（102）和第二光学部件（106） 在法线方向（110）可在第一和第二电路板区域位于光纤接口耦合后面。

公开(公告)号：WO2008125242A3

公开(公告)日：2008-12-31

申请号：PCT/EP2008002739

申请日：2008-04-07

Applicant: FRAUNHOFER GES FORSCHUNG ,  TSCHEKALINSKIJ WLADIMIR ,  JUNGER STEPHAN ,  WEBER NORBERT

Inventor： TSCHEKALINSKIJ WLADIMIR ,  JUNGER STEPHAN ,  WEBER NORBERT

IPC: H01L27/146 ,  G02B5/18

CPC classification number: B82Y20/00 ,  G02B5/008 ,  G02B6/1226 ,  H01L27/14621

Abstract: The invention relates to an integrated sensor element (10) which is produced in CMOS technology and comprises a pixel sensor (14) and a metal structure (16; 34-1) and produces a plasmon polariton resonance effect in response to electromagnetic radiation (12) in a predetermined transmission wavelength range, the metal structure (16; 34-1) being structured in a CMOS metal layer. The pixel sensor (14) and the metal structure (16; 34-1) are integrated on a common semiconductor substrate (30) so that owing to the plasmon-polariton resonance effect there is greater transmission through the metal structure (16; 34-1) to the pixel sensor for the transmission wavelength range then for wavelengths close to the transmission wavelength range.

Abstract translation: 在CMOS技术中，集成传感器元件生产的产品（10），其具有像素传感器（14）和一个金属结构（16; 34-1），其响应于预定的传输波长范围的电磁辐射（12）允许的等离子体激元 - 极化共振效应， 其中，所述金属结构（16; 34-1）在CMOS金属层被构造，并且其中，所述像素传感器（14）和金属结构（16; 34-1）一个半导体基片（30）共同上一体化，所以因认为 到像素传感器（14）比周围的波长的透过波长范围;用于通过所述金属结构（34-1 16）的透过波长范围更高的传输等离子体激元共振极化效应。

公开(公告)号：WO2009106316A3

公开(公告)日：2009-12-03

申请号：PCT/EP2009001346

申请日：2009-02-25

Applicant: FRAUNHOFER GES FORSCHUNG ,  WEBER NORBERT ,  JUNGER STEPHAN ,  TSCHEKALINSKIJ WLADIMIR

Inventor： WEBER NORBERT ,  JUNGER STEPHAN ,  TSCHEKALINSKIJ WLADIMIR

IPC: G01J3/28 ,  G01J3/51 ,  H01L27/146

CPC classification number: G01J3/26 ,  G01J3/02 ,  G01J3/0208 ,  G01J3/0229 ,  G01J3/0243 ,  G01J3/0259 ,  G01J3/2803 ,  G01J3/2823 ,  G01J3/36 ,  G01J2003/1213 ,  H01L27/14621 ,  H01L27/14645 ,  H01L31/02165

Abstract: The invention relates to a multi-spectral image sensor having a two-dimensional array of super-pixels, wherein each super-pixel has at least five sensor elements (11), each comprising a pixel sensor (14), a filter structure (12) having at least one structured layer made of metal or polycrystalline semi-conductor material, which, in response to the electromagnetic radiation of a wavelength region, results in a higher transmission through the filter structure to the pixel sensor (14) than wavelengths surrounding the wavelength region, wherein the at least five sensor elements (12) are jointly integrated on a semi-conductor substrate (16) and are configured on different wavelength regions in pairs.

Abstract translation: 具有超像素的二维阵列阿多光谱图像传感器，每个超像素具有至少五个传感器元件（11）各自具有金属或多晶半导体材料的至少一个图案化层，电磁辐射的响应的像素传感器（14），过滤器结构（12） 波长范围内产生较高的透射率通过过滤器结构的像素传感器（14），比周围的波长，其特征在于，该至少5个传感器元件（12）的半导体衬底（16）共同在被集成并成对地配置在不同的波长范围的波长范围。

公开(公告)号：WO2008122431A2

公开(公告)日：2008-10-16

申请号：PCT/EP2008002740

申请日：2008-04-07

Applicant: FRAUNHOFER GES FORSCHUNG ,  TSCHEKALINSKIJ WLADIMIR ,  JUNGER STEPHAN ,  WEBER NORBERT

Inventor： TSCHEKALINSKIJ WLADIMIR ,  JUNGER STEPHAN ,  WEBER NORBERT

IPC: H01L27/146 ,  G02B5/18 ,  G02B6/12

CPC classification number: G02B6/1225 ,  B82Y20/00 ,  G02B1/005 ,  G02B5/201 ,  H01L27/14621

Abstract: The invention relates to an integrated component (10; 40; 50) comprising a filter structure (12) provided with at least one photonic crystal (22) formed from a stack of dielectric layers (36) and a plurality of structured metallic layers (34; 44). The structured metallic layers each have a periodical structure consisting of microelements, which is different from the periodical structure of microelements of an adjacent structured metallic layer of the at least one photonic crystal (22), or is laterally staggered in relation thereto. Said component also comprises an optoelectronic component part (14), the filter structure (12) and the optoelectronic component part (14) being incorporated together into a semiconductor substrate (16).

Abstract translation: 形成，所述的集成部件（10; 40; 50），其具有过滤器结构（12）与至少一个光子晶体（22）的介电层（36）和多个结构化的金属层（44 34）的层堆叠构成 图案化的金属层每一个具有从所述至少一个光子晶体（22）的相邻结构的金属层的微元件的周期性结构不同的结构或横向移动的微元件，并且一个光电部件（14）的周期性结构，其中，所述过滤器结构（ 12）与共同的光电部件（14）（在半导体基板16）被集成。