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    Novel Passivation Composition and Process
    1.
    发明申请
    Novel Passivation Composition and Process 审中-公开
    新型钝化组合物和工艺

    公开(公告)号：WO2013059806A1

    公开(公告)日：2013-04-25

    申请号：PCT/US2012/061355

    申请日：2012-10-22

    Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

    Inventor： KRUPA, Frank J. ,  WOJTCZAK, William A. ,  DU, Bing ,  TAKAHASHI, Tomonori

    IPC: H01L21/31 ,  H01L21/469

    CPC classification number: C23F1/44 ,  C23C22/48 ,  C23F1/16 ,  C23F1/28 ,  H01L21/02 ,  H01L21/28518 ,  H01L21/321 ,  H01L21/32134

    Abstract: The present disclosure relates to semiconductor device manufacturing, and particularly to selective metal wet etching compositions and processes for selectively etching certain metals relative to adjacent structures and materials with those etching compositions. More particularly, the present disclosure relates to aqueous metal passivation and etching compositions, as well as to processes of using these compositions in the presence of nickel platinum silicides. This disclosure further relates to a passivation composition containing at least one sulfonic acid, at least one compound containing a nitrate or nitrosyl ion, and water, wherein the passivation composition is substantially free of a halide ion.

    Abstract translation: 本公开内容涉及半导体器件制造，特别涉及选择性金属湿法蚀刻组合物以及用这些蚀刻组合物相对于相邻结构和材料选择性地蚀刻某些金属的方法。 更具体地说，本公开内容涉及含水金属钝化和蚀刻组合物，以及在镍铂硅化物存在下使用这些组合物的方法。 本公开还涉及含有至少一种磺酸，至少一种含有硝酸根或亚硝酰基离子的化合物和水的钝化组合物，其中钝化组合物基本上不含卤离子。

    STRIPPING COMPOSITIONS FOR REMOVING PHOTORESISTS FROM SEMICONDUCTOR SUBSTRATES
    5.
    发明申请
    STRIPPING COMPOSITIONS FOR REMOVING PHOTORESISTS FROM SEMICONDUCTOR SUBSTRATES 审中-公开
    用于从半导体基材去除光刻胶的剥离组合物

    公开(公告)号：WO2017205134A1

    公开(公告)日：2017-11-30

    申请号：PCT/US2017/033041

    申请日：2017-05-17

    Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

    Inventor： MIZUTANI, Atsushi ,  WOJTCZAK, William A. ,  SUGISHIMA, Yasuo

    IPC: B08B3/00 ,  C11D3/20 ,  C23G1/00

    Abstract: This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one compound comprising at least three hydroxyl groups; 4) at least one carboxylic acid; 5) at least one Group II metal cation; 6) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 7) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

    Abstract translation: 本公开涉及含有1）至少一种水溶性极性非质子有机溶剂的组合物; 2）至少一种季铵氢氧化物; 3）至少一种包含至少三个羟基的化合物; 4）至少一种羧酸; 5）至少一种II族金属阳离子; 6）至少一种选自6-取代-2,4-二氨基-1,3,5-三嗪的铜腐蚀抑制剂; 和7）水。 该组合物可以有效地剥去正或负色调抗蚀剂或抗蚀剂残留物，并且对凸块和下面的金属化材料（例如SnAg，CuNiSn，CuCoCu，CoSn，Ni，Cu，Al，W，Sn，Co和 等等）在半导体衬底上。

    ETCHING COMPOSITIONS
    7.
    发明申请
    ETCHING COMPOSITIONS 审中-公开

    公开(公告)号：WO2020159771A1

    公开(公告)日：2020-08-06

    申请号：PCT/US2020/014609

    申请日：2020-01-22

    Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

    Inventor： KNEER, Emil A. ,  WOJTCZAK, William A.

    IPC: C23F1/16 ,  C09K13/00 ,  C09K13/06 ,  C23F1/30 ,  H01L21/02 ,  H01L21/306

    Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing titanium nitride (TiN) from a semiconductor substrate without substantially forming a cobalt oxide hydroxide layer. The present disclosure is based on the unexpected discovery that certain etching compositions can selectively etch TiN without forming a CoOx hydroxide layer on a Co layer in the semiconductor device, thereby enabling a subsequent Co etch without delay.

    CLEANING FORMULATION FOR REMOVING RESIDUES ON SURFACES
    10.
    发明申请
    CLEANING FORMULATION FOR REMOVING RESIDUES ON SURFACES 审中-公开
    用于清除表面残留物的清洁配方

    公开(公告)号：WO2015084921A1

    公开(公告)日：2015-06-11

    申请号：PCT/US2014/068294

    申请日：2014-12-03

    Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

    Inventor： TAKAHASHI, Tomonori ,  DU, Bing ,  WOJTCZAK, William A. ,  DORY, Thomas ,  KNEER, Emil A.

    IPC: B08B3/04 ,  C11D7/60

    CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3281 ,  C11D7/5022 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/0273 ,  H01L21/31133

    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

    Abstract translation: 本公开涉及一种清洁组合物，其包含1）至少一种氧化还原剂; 2）至少一种第一螯合剂，所述第一螯合剂是聚氨基多羧酸; 3）至少一种不同于第一螯合剂的第二螯合剂，所述第二螯合剂含有至少两个含氮基团; 4）至少一种金属腐蚀抑制剂，金属腐蚀抑制剂是取代或未取代的苯并三唑; 5）至少一种选自水溶性醇，水溶性酮，水溶性酯和水溶性醚的有机溶剂; 6）水; 和7）任选的至少一种pH调节剂，所述pH调节剂是不含金属离子的碱。 本公开还涉及使用上述组合物来清洁半导体衬底的方法。

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