公开(公告)号：WO2008057222A2

公开(公告)日：2008-05-15

申请号：PCT/US2007/022559

申请日：2007-10-23

Applicant: FULTEC SEMICONDUCTOR, INC. ,  HARRIS, Richard, A.

Inventor： HARRIS, Richard, A.

IPC: H02H3/00

CPC classification number: H02H9/025

Abstract: A transient blocking unit (TBU) includes at least two depletion mode transistors connected to each other such that they can rapidly switch from a normal low-impedance state to a high-impedance current blocking state in response to an over- voltage or over-current condition. This behavior makes TBUs useful for protecting electrical devices and circuit from harmful electrical transients. Some kinds of transistors can exhibit a phenomenon known as current collapse, where channel conductance is temporarily reduced after exposure to high voltage. Although current collapse is undesirable, transistors exhibiting current collapse can have otherwise favorable properties for TBU applications. According to the present invention, a TBU is provided where a diode is placed in parallel with a TBU transistor that can exhibit current collapse. The diode prevents high power dissipation in a current collapsed transistor, thereby reducing the vulnerability of the TBU to permanent damage or destruction in service.

Abstract translation: 瞬态阻塞单元（TBU）包括彼此连接的至少两个耗尽型晶体管，使得它们能够响应于以下情况而从正常的低阻抗状态快速切换到高阻抗电流阻断状态： 过电压或过电流状态。 这种行为使得TBU可用于保护电气设备和电路免受有害电瞬变的影响。 某些种类的晶体管可能会出现称为电流崩塌的现象，其中沟道电导在暴露于高电压后暂时降低。 虽然目前的崩溃是不可取的，但显示电流崩溃的晶体管对于TBU应用可能具有其他有利的性能。 根据本发明，提供TBU，其中二极管与TBU晶体管并联放置，所述TBU晶体管可能表现出电流崩塌。 二极管可防止电流崩溃的晶体管中的高功耗，从而降低TBU在服务中永久损坏或破坏的脆弱性。

公开(公告)号：WO2007058799A2

公开(公告)日：2007-05-24

申请号：PCT/US2006/043102

申请日：2006-11-03

Applicant: FULTEC SEMICONDUCTOR, INC. ,  HARRIS, Richard, A. ,  HEBERT, Francois

Inventor： HARRIS, Richard, A. ,  HEBERT, Francois

IPC: H02H3/22

CPC classification number: H02H9/025 ,  H01L27/0266 ,  H02H9/04

Abstract: A transient blocking unit (TBU) having improved damage resistance is provided. A TBU includes two or more depletion mode transistors arranged to provide a low series impedance in normal operation and a high series impedance when the input current exceeds a predetermined threshold. At least one of the TBU transistors is a protecting device having a shunt circuit element connected in parallel with its channel. When the TBU is in its high impedance state, the shunt circuit element provides a current path, thereby decreasing terminal voltages on at least one of the TBU transistors. The shunt element can be a discrete or integrated resistor, a current source including a transistor, or an appropriately engineered device parasitic.

Abstract translation: 提供具有改进的抗损伤性的瞬变阻挡单元（TBU）。 TBU包括两个或更多个耗尽型晶体管，其布置成在正常操作中提供低串联阻抗，并且当输入电流超过预定阈值时提供高串联阻抗。 至少一个TBU晶体管是具有与其沟道并联连接的分流电路元件的保护装置。 当TBU处于其高阻抗状态时，分路电路元件提供电流路径，从而减小至少一个TBU晶体管上的端电压。 分流元件可以是分立的或集成的电阻器，包括晶体管的电流源，或适当设计的寄生器件。

公开(公告)号：WO2006053025A2

公开(公告)日：2006-05-18

申请号：PCT/US2005/040555

申请日：2005-11-09

Applicant: FULTEC SEMICONDUCTOR, INC. ,  HARRIS, Richard, A. ,  COATES, Stephen ,  HEBERT, Francois

Inventor： HARRIS, Richard, A. ,  COATES, Stephen ,  HEBERT, Francois

IPC: H02H1/00

CPC classification number: H02H5/044 ,  H02H5/042 ,  H02H9/025

Abstract: An apparatus and method for temperature-dependent transient blocking employing a transient blocking unit (TBU) that uses at least one depletion mode n-channel device interconnected with at least one depletion mode p-channel device. The interconnection is performed such that a transient alters a bias voltage V p of the p-channel device and a bias voltage V n of the n-channel device in concert to effectuate their mutual switch off to block the transient. The apparatus has a temperature control unit that is in communication with the TBU and adjusts at least one of the bias voltagesV P, V n in response to a sensed temperature T 5 , thereby enabling the apparatus to also respond to over-temperature. In some embodiments the p-channel device is replaced with a positive temperature coefficient thermistor (PTC). The temperature control unit can use any suitable circuit element, including, among other a PTC, resistor, negative temperature coefficient element, positive temperature coefficient element, transistor, diode.

Abstract translation: 一种采用使用与至少一个耗尽型p沟道器件互连的至少一个耗尽型n沟道器件的瞬态阻断单元（TBU）的温度依赖性瞬态阻塞的装置和方法。 执行互连，使得瞬态改变p沟道器件的偏置电压V SUB p N和N沟道器件的偏置电压V N n N一致地实现 他们的相互关闭来阻止瞬态。 该装置具有与TBU通信的温度控制单元，并且响应于感测到的温度T 5 ，从而使得该装置也能够对过温作出响应。 在一些实施例中，用正温度系数热敏电阻（PTC）代替p沟道器件。 温度控制单元可以使用任何合适的电路元件，包括PTC，电阻器，负温度系数元件，正温度系数元件，晶体管，二极管等。

公开(公告)号：WO2007022136A2

公开(公告)日：2007-02-22

申请号：PCT/US2006/031742

申请日：2006-08-11

Applicant: FULTEC SEMICONDUCTOR, INC. ,  HARRIS, Richard, A. ,  BLANCHARD, Richard, A. ,  HEBERT, Francois

Inventor： HARRIS, Richard, A. ,  BLANCHARD, Richard, A. ,  HEBERT, Francois

IPC: H02H9/06

CPC classification number: H02H9/025

Abstract: Improved electrical transient blocking is provided with a transient blocking unit (TBU) having a partial disconnect capability. A TBU is an arrangement of voltage controlled switches that normally conducts, but switches to a disconnected state in response to an above-threshold input transient. Partial disconnection improves the power handling capability of a TBU by preventing thermal damage to the TBU. Partial TBU disconnection can be implemented to keep power dissipation in the TBU below a predetermined level P max , thereby avoiding thermal damage to the TBU by keeping the TBU temperature below a temperature limit T max . Alternatively, partial TBU disconnection can be implemented to keep TBU temperature below T max using direct temperature sensing and feedback.

Abstract translation: 提供了具有部分断开能力的瞬态阻塞单元（TBU）的改进的电瞬变阻塞。 TBU是通常导通的电压控制开关的布置，但是响应于高于阈值的输入瞬变而切换到断开状态。 部分断开通过防止TBU的热损坏提高了TBU的功率处理能力。 可以实施部分TBU断开以将TBU中的功率消耗降低到预定水平P max以下，从而通过将TBU温度保持在温度下限T max以下来避免对TBU的热损伤， SUB>。 或者，可以使用直接温度感测和反馈来实现部分TBU断开以将TBU温度保持在T 以下。

公开(公告)号：WO2006116517A2

公开(公告)日：2006-11-02

申请号：PCT/US2006/015841

申请日：2006-04-25

Applicant: FULTEC SEMICONDUCTOR, INC. ,  BLANCHARD, Richard, A. ,  HARRIS, Richard, A. ,  HEBERT, Francois

Inventor： BLANCHARD, Richard, A. ,  HARRIS, Richard, A. ,  HEBERT, Francois

IPC: H02H9/00

CPC classification number: H01J1/72 ,  C09K11/59 ,  H01H9/548 ,  H02H9/025

Abstract: An apparatus and a method for uni-directional and bi-directional transient blocking. The uni-directional apparatus has a depletion mode n-channel device at its input and a normally closed relay, e.g., a micro-electro-mechanical (MEM) relay, interconnected with the depletion mode n-channel device and the input in such a way that at a predetermined current value the transient causes the normally closed relay to switch into an open state and produces a bias voltage V n on the depletion mode n-channel device that is sufficiently high to switch it "off" and thus block the transient. An analogous arrangement at the output taking advantage of the same or a second relay renders the apparatus bi-directional. The structure of the apparatus and the method of operation ensure a reliable and repeatable trip current I trip and render the apparatus very robust and feasible for low-cost manufacture.

Abstract translation: 用于单向和双向瞬态阻塞的装置和方法。 单向设备在其输入端具有耗尽模式n沟道器件和常闭继电器，例如与耗尽型n沟道器件互连的微机电（MEM）继电器，以及在这种 在预定电流值下，瞬态使常闭继电器切换到打开状态，并且在耗尽型n沟道器件上产生足够高以切换它的偏置电压V N“ 关闭“，从而阻止瞬态。 利用相同或第二中继器的输出处的类似布置使设备双向。 该装置的结构和操作方法确保了可靠和可重复的跳闸电流跳闸，并且使得该装置非常坚固且适用于低成本制造。

公开(公告)号：WO2006086564A2

公开(公告)日：2006-08-17

申请号：PCT/US2006/004606

申请日：2006-02-09

Applicant: FULTEC SEMICONDUCTOR INC. ,  HARRIS, Richard, A.

Inventor： HARRIS, Richard, A.

IPC: H02H9/00

CPC classification number: H04M3/18 ,  H02H1/0069 ,  H02H9/041 ,  H04M3/005

Abstract: A protection system in which a shunt protection device at the interface terminals is optically triggered by sensor components within the circuit. This permits a variety of appropriate overvoltage detection thresholds to be defined at different nodes within the circuit. Preferably the shunt protection device is combined with one or more series protection devices which interrupt overcurrent.

Abstract translation: 一种保护系统，其中接口端子处的分流保护装置由电路内的传感器部件光学触发。 这允许在电路内的不同节点处定义各种适当的过电压检测阈值。 优选地，并联保护装置与一个或多个中断过电流的串联保护装置组合。

公开(公告)号：WO2009014765A1

公开(公告)日：2009-01-29

申请号：PCT/US2008/009131

申请日：2008-07-25

Applicant: FULTEC SEMICONDUCTOR, INC. ,  DARWISH, Mohamed, N. ,  WEI, Tao ,  COATES, Stephen ,  HARRIS, Richard, A. ,  MORRISH, Andrew, J.

Inventor： DARWISH, Mohamed, N. ,  WEI, Tao ,  COATES, Stephen ,  HARRIS, Richard, A. ,  MORRISH, Andrew, J.

IPC: H02H9/02 ,  H01L27/02

CPC classification number: H02H9/025 ,  H01L27/0266 ,  H01L2224/49113 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/3011 ,  H02H3/006 ,  H01L2924/00

Abstract: A transient blocking unit (TBU) is a transistor circuit that is normally on, but rapidly and automatically switches to a high-resistance current blocking state when a current threshold is exceeded, thereby protecting a series connected load from over-voltage or over-current conditions. Process variation of transistor threshold voltage and on-resistance can cause undesirable variation of the TBU threshold current and/or of TBU resistance. Control of TBU threshold current and/or resistance is improved by providing for trimming the TBU during its fabrication to provide a one-time adjustment of the threshold current or resistance. Such trimming can be done with a resistive trimming circuit placed in series with the on- resistance of the relevant TBU transistor. Alternatively, a segmented TBU transistor having an on-resistance that is adjustable by way of wire bonding during fabrication can be employed.

Abstract translation: 瞬态阻断单元（TBU）是通常导通的晶体管电路，但当超过电流阈值时，会迅速自动切换到高电阻电流阻断状态，从而保护串联负载免受过电压或过流 条件。 晶体管阈值电压和导通电阻的工艺变化可能导致TBU阈值电流和/或TBU电阻的不良变化。 通过在其制造期间提供修整TBU以提供阈值电流或电阻的一次调整来改善对TBU阈值电流和/或电阻的控制。 这种修整可以通过与相关TBU晶体管的导通电阻串联放置的电阻微调电路来完成。 或者，可以使用具有在制造期间通过引线键合调节的导通电阻的分段TBU晶体管。

公开(公告)号：WO2008063674A3

公开(公告)日：2008-05-29

申请号：PCT/US2007/024408

申请日：2007-11-23

Applicant: FULTEC SEMICONDUCTOR, INC. ,  HARRIS, Richard, A. ,  DARWISH, Mohamed, N.

Inventor： HARRIS, Richard, A. ,  DARWISH, Mohamed, N.

IPC: H02H3/00

Abstract: An improved bi-directional transient blocking unit (TBU) is provided having a dual-gate central transistor. The gates of the central transistor are connected to the rest of the TBU such that high voltages can only appear between a gate and the central transistor terminal further from that gate. In this manner, the total device size required to provide a given breakdown voltage can be significantly reduced compared to a conventional symmetric lateral transistor having a single gate.

公开(公告)号：WO2006053326A2

公开(公告)日：2006-05-18

申请号：PCT/US2005/041416

申请日：2005-11-09

Applicant: FULTEC SEMICONDUCTOR, INC. ,  HEBERT, Francois ,  HARRIS, Richard, A.

Inventor： HEBERT, Francois ,  HARRIS, Richard, A.

IPC: H02H9/00

CPC classification number: H01L27/0266 ,  H01L27/0727 ,  H02H9/025 ,  H02H9/046

Abstract: A transient blocking unit (TBU) with integrated over-current protection and discrete over-voltage protection. In one example embodiment, the present innovations are embodied as a unit for protecting a circuit from high voltage and high current, comprising a core transient blocking unit with at least one high voltage device wherein the core transient blocking unit is integrated, and wherein the at least one high voltage device is discrete.

Abstract translation: 具有集成过流保护和离散过电压保护的瞬态阻断单元（TBU）。 在一个示例性实施例中，本发明被实施为用于保护电路免受高电压和高电流的单元，其包括具有至少一个高压器件的核心瞬态阻塞单元，其中所述核心瞬态阻塞单元被集成，并且其中， 至少一个高压装置是离散的。

公开(公告)号：WO2006138119A3

公开(公告)日：2006-12-28

申请号：PCT/US2006/022010

申请日：2006-06-05

Applicant: FULTEC SEMICONDUCTOR, INC. ,  HARRIS, Richard, A.

Inventor： HARRIS, Richard, A.

IPC: H02H9/00

Abstract: A method and apparatus for transient blocking relying on a transient blocking device and a sampling circuit. The transient blocking device has at least one depletion mode n- channel device interconnected with at least one depletion mode p-channel device such that a transient alters a bias voltage Vp of the depletion mode p-channel device and a bias voltage Vn of the depletion mode n-channel device in such a manner that the depletion mode devices mutually switch off to block the transient. The sampling circuit is interconnected with the depletion mode p-channel device and the depletion mode n- channel device for unblocking the transient blocking device for to determined whether the transient persists. In the event of a persistent transient, the sampling circuit uses a disconnect element for permanently blocking the transient blocking device. Various types of voltage pinching and disconnect elements, including depletion mode devices of the n-channel and p-channel type can be employed in the sampling circuit to sample the transient and permanently block the transient blocking device.