中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

19 records (took 0.009 seconds)

    ASYNCHRONOUS TRUE RANDOM NUMBER GENERATOR USING STT-MTJ
    1.
    发明申请
    ASYNCHRONOUS TRUE RANDOM NUMBER GENERATOR USING STT-MTJ 审中-公开

    公开(公告)号：WO2020115741A1

    公开(公告)日：2020-06-11

    申请号：PCT/IL2019/051322

    申请日：2019-12-02

    Applicant: TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED

    Inventor： KVATINSKY, Shahar ,  PERACH, Ben

    IPC: G11C17/02 ,  G11C11/00 ,  H04L9/00

    Abstract: A method, comprising: providing an electrical energy source having a specified amount of electrical energy; connecting an array comprising n magnetic tunnel junctions (MTJ) in parallel to said electrical energy source, wherein each of said MTJs is at a high resistance initial state; discharging said specified energy amount through said MTJs, thereby causing a random subset of said MTJs to switch to a lower resistance state; determining a post-discharging resistance state of each of the MTJs; and assigning a logical state to each of said MTJs corresponding to said resistance state of said MTJ.

    PHYSICALLY UNCLONABLE FUNCTION BASED ON BREAKDOWN VOLTAGE OF METAL-INSULATOR-METAL DEVICE
    2.
    发明申请
    PHYSICALLY UNCLONABLE FUNCTION BASED ON BREAKDOWN VOLTAGE OF METAL-INSULATOR-METAL DEVICE 审中-公开
    基于金属绝缘体金属器件的断开电压的物理不可靠功能

    公开(公告)号：WO2015035037A1

    公开(公告)日：2015-03-12

    申请号：PCT/US2014/054078

    申请日：2014-09-04

    Applicant: QUALCOMM INCORPORATED

    Inventor： ZHU, Xiaochun ,  MILLENDORF, Steven M. ,  GUO, Xu ,  JACOBSON, David M. ,  LEE, Kangho ,  KANG, Seung H. ,  NOWAK, Matthew Michael

    IPC: G11C11/16 ,  H04L9/08 ,  H04L9/32 ,  G11C17/02

    CPC classification number: G06F21/70 ,  G06F1/26 ,  G09C1/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  G11C17/02 ,  G11C17/14 ,  H04L9/0866 ,  H04L9/3278 ,  H04L2209/12

    Abstract: One feature pertains to a method of implementing a physically unclonable function that includes providing an array of metal-insulator-metal (MIM) devices, where the MIM devices are configured to represent a first resistance state or a second resistance state and a plurality of the MIM devices are initially at the first resistance state. The MIM devices have a random breakdown voltage that is greater than a first voltage and less than a second voltage, where the breakdown voltage represents a voltage that causes the MIM devices to transition from the first resistance state to the second resistance state. The method further includes applying a signal line voltage to the MIM devices to cause a portion of the MIM devices to randomly breakdown and transition from the first resistance state to the second resistance state, the signal line voltage greater than the first voltage and less than the second voltage.

    Abstract translation: 一个特征涉及实现物理上不可克隆的功能的方法，其包括提供金属 - 绝缘体 - 金属（MIM）器件的阵列，其中MIM器件被配置为表示第一电阻状态或第二电阻状态，并且多个 MIM器件最初处于第一电阻状态。 MIM器件具有大于第一电压且小于第二电压的随机击穿电压，其中击穿电压表示使MIM器件从第一电阻状态转变到第二电阻状态的电压。 该方法还包括向MIM器件施加信号线电压以使MIM器件的一部分随机击穿并从第一电阻状态转变到第二电阻状态，信号线电压大于第一电压并小于 第二电压。

    PROGRAMMABLE MAGNETIC MEMORY DEVICE FP-MRAM
    3.
    发明申请
    PROGRAMMABLE MAGNETIC MEMORY DEVICE FP-MRAM 审中-公开
    可编程磁记忆体设备FP-MRAM

    公开(公告)号：WO2004032146A3

    公开(公告)日：2005-01-27

    申请号：PCT/IB0304376

    申请日：2003-09-30

    Applicant: KONINKL PHILIPS ELECTRONICS NV ,  LENSSEN KARS-MICHIEL H

    Inventor： LENSSEN KARS-MICHIEL H

    IPC: G11B5/00 ,  G11B5/48 ,  G11B5/49 ,  G11C7/24 ,  G11C11/16 ,  G11C17/02 ,  G11C17/14

    CPC classification number: G11C7/24 ,  G11B5/00 ,  G11B5/488 ,  G11B5/4907 ,  G11B2005/0002 ,  G11B2005/0021 ,  G11C11/16

    Abstract: A memory device has an information plane (32) for storing data bits in a magnetic state of an electro-magnetic material at an array of bit locations (31). The device further has an array of electro-magnetic sensor elements (51) that are aligned with the bit locations. The information plane (32) is programmable or programmed via a separate magnetic writing device (21). In particular a read-only sensor element (60) is described for a read-only magnetic memory.

    Abstract translation: 存储器件具有信息平面（32），用于存储在位阵列（31）处的电磁材料的磁状态下的数据位。 该装置还具有与位位置对准的电磁传感器元件阵列（51）。 信息平面（32）可通过单独的磁性写入装置（21）进行编程或编程。 特别地，对于只读磁存储器描述了只读传感器元件（60）。

    WRITE DRIVER AND PROGRAM DRIVER FOR OTP (ONE-TIME PROGRAMMABLE) MEMORY WITH MAGNETIC TUNNELING JUNCTION CELLS
    4.
    发明申请
    WRITE DRIVER AND PROGRAM DRIVER FOR OTP (ONE-TIME PROGRAMMABLE) MEMORY WITH MAGNETIC TUNNELING JUNCTION CELLS 审中-公开
    用于OTP（一次性可编程）的磁盘驱动程序和程序驱动器与磁性隧道连接电池

    公开(公告)号：WO2015057375A1

    公开(公告)日：2015-04-23

    申请号：PCT/US2014/057756

    申请日：2014-09-26

    Applicant: QUALCOMM INCORPORATED

    Inventor： KIM, Sungryul ,  KIM, Taehyun ,  KIM, Jung Pill

    IPC: G11C17/02 ,  G11C11/16

    CPC classification number: G11C17/18 ,  G11C11/1675 ,  G11C17/02 ,  G11C17/16 ,  G11C17/165

    Abstract: A one-time programmable (OTP) memory having a plurality of cells (102), each cell (102) having a magnetic tunnel junction (MTJ) device; and the OTP memory further including a write driver (136) to drive each MTJ device to an anti-parallel state, and a program driver (139) to drive a subset of the MTJ devices to a blown state depending upon the information to be stored.

    Abstract translation: 具有多个单元（102）的一次性可编程（OTP）存储器，每个单元（102）具有磁性隧道结（MTJ）装置; 并且所述OTP存储器还包括用于将每个MTJ设备驱动到反并行状态的写入驱动器（136），以及根据要存储的信息将所述MTJ设备的子集驱动到吹扫状态的程序驱动器（139） 。

    MAGNETIC TUNNEL JUNCTION ANTIFUSE CIRCUIT COMPRISING PARALLEL CONNECTED REFERENCE MAGNETIC TUNNEL JUNCTIONS TO PROVIDE AN OPTIMUM REFERENCE RESISTANCE
    5.
    发明申请
    MAGNETIC TUNNEL JUNCTION ANTIFUSE CIRCUIT COMPRISING PARALLEL CONNECTED REFERENCE MAGNETIC TUNNEL JUNCTIONS TO PROVIDE AN OPTIMUM REFERENCE RESISTANCE 审中-公开
    包括并联连接的参考磁性隧道结的磁性隧道接线电阻电路提供最佳的参考电阻

    公开(公告)号：WO2007120159A3

    公开(公告)日：2009-04-16

    申请号：PCT/US2006023123

    申请日：2006-06-13

    Applicant: FREESCALE SEMICONDUCTOR INC ,  ANDRE THOMAS W ,  SUBRAMANIAN CHITRA K

    Inventor： ANDRE THOMAS W ,  SUBRAMANIAN CHITRA K

    IPC: G11C17/00 ,  G11C7/02 ,  G11C11/00 ,  G11C11/14 ,  G11C11/15 ,  G11C17/02 ,  G11C17/18

    CPC classification number: H01L29/4966 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

    Abstract: An antifuse circuit (10) provides on a per bit basis a signal that indicates whether an MTJ (magnetic tunnel junction) antifuse (18) has been previously programmed to a low resistance state in response to a program voltage. A sense amplifier (12) provides the resistance state signal. A plurality of reference magnetic tunnel junctions (16) are coupled in parallel and to the sense amplifier (12), each (50, 52, 54) having a resistance within a range to provide a collective resistance that can be determined by the sense amplifier (12) to differ from each resistance state of the MTJ antifuse (18). A write circuit selectively provides a current sufficient to create the program voltage when the write circuit (20) is enabled to program the antifuse magnetic tunnel junction (18). Upon detecting a change in resistance in the MTJ antifuse (18), the write circuit (20) reduces current supplied to the antifuse (18). Multiple antifuses may be programmed concurrently. Gate oxide thicknesses of transistors are adjusted for optimal performance.

    Abstract translation: 反熔丝电路（10）以每比特为基础提供一个信号，该信号指示MTJ（磁性隧道结）反熔丝（18）是否已被预先编程为响应于编程电压的低电阻状态。 读出放大器（12）提供电阻状态信号。 多个参考磁隧道结（16）并联耦合到读出放大器（12），每个（50,52,54）具有在一个范围内的电阻以提供可由感测放大器确定的集合电阻 （12）与MTJ反熔丝（18）的每个电阻状态不同。 当写入电路（20）能够编程反熔丝磁性隧道结（18）时，写入电路选择性地提供足以产生编程电压的电流。 当检测到MTJ反熔丝（18）中的电阻变化时，写入电路（20）减少提供给反熔丝（18）的电流。 多个反熔丝可以同时编程。 调整晶体管的栅极氧化物厚度以获得最佳性能。

    METHOD OF OPERATING PROGRAMMABLE RESISTANT ELEMENT
    9.
    发明申请
    METHOD OF OPERATING PROGRAMMABLE RESISTANT ELEMENT 审中-公开
    操作可编程电阻元件的方法

    公开(公告)号：WO2004030033A3

    公开(公告)日：2004-09-23

    申请号：PCT/US0327150

    申请日：2003-08-27

    Applicant: OVONYX INC

    Inventor： PARKINSON WARD

    IPC: G11C17/16 ,  G11C17/18 ,  G11C17/02

    CPC classification number: G11C17/165 ,  G11C13/0004 ,  G11C17/16 ,  G11C17/18

    Abstract: A method of programming a programmable resistance element. The programmable resistance element may be programmed to a BLOWN state. After being programmed to the BLOWN state, the element can no longer be programmed to its low resistance state. The method of programming allows the programmable resistance element to be used as a fuse.

    Abstract translation: 编程可编程电阻元件的方法。 可编程电阻元件可以被编程为BLOWN状态。 在编程为BLOWN状态后，该元件不能再被编程为其低电阻状态。 编程方法允许可编程电阻元件用作保险丝。

    MRAM MEMORIES UTILIZING MAGNETIC WRITE LINES
    10.
    发明申请
    MRAM MEMORIES UTILIZING MAGNETIC WRITE LINES 审中-公开

    公开(公告)号：WO2004053880A3

    公开(公告)日：2004-06-24

    申请号：PCT/US2003/039288

    申请日：2003-12-09

    Applicant: APPLIED SPINTRONICS TECHNOLOGY, INC.

    Inventor： TSANG, David

    IPC: G11C17/02

    Abstract: A method and system for providing and using a magnetic random access memory are disclosed. The method and system include providing a plurality of magnetic memory cells, a first plurality of write lines, and a second plurality of write lines. The first plurality of write lines is a plurality of magnetic write lines. At least one of the plurality of magnetic lines and at least one of the second plurality of write lines each carrying a current for writing to at least one of the plurality of magnetic memory cells. Preferably, the plurality of magnetic write lines have soft magnetic properties and are preferably magnetic bit lines. For magnetic tunneling junction stacks within the magnetic memory cells, the magnetic bit lines are preferably significantly thicker than and closely spaced to the free layers of the magnetic memory cells.

Patent Agency Ranking