公开(公告)号：WO2014036101A1

公开(公告)日：2014-03-06

申请号：PCT/US2013/057018

申请日：2013-08-28

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： HUANG, Kenlin ,  CHIN, Yuan-Tung ,  ZHONG, Tom ,  TORNG, Chyu-Jiuh

IPC: H01F10/32 ,  H01F41/30 ,  H01F41/32 ,  G01R33/09 ,  G11C11/16 ,  H01L43/12

CPC classification number: G01R33/098 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F41/308 ,  H01F41/325 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic thin film deposition is patterned and protected from oxidation during subsequent processes, such as bit line formation, by an oxidation-prevention encapsulation layer of SiN. The SiN layer is then itself protected during the processing by a metal overlayer, preferably of Ta, Al, TiN, TaN or W. A sequence of low pressure plasma etches, using Oxygen, Cl 2 , BCl 3 and C 2 H 4 chemistries provide selectivity of the metal overlayer to various oxide layers and to the photo- resist hard masks used in patterning and metal layer and thereby allow the formation of bit lines while maintaining the integrity of the SiN layer.

Abstract translation: 通过SiN的防氧化封装层，在随后的工艺（例如位线形成）中图案化和保护磁性薄膜沉积物免于氧化。 然后，SiN层在金属覆盖层，优选Ta，Al，TiN，TaN或W的处理过程中自身受到保护。使用氧气，Cl2，BCl3和C2H4化学物质的低压等离子体蚀刻序列提供金属覆层的选择性 到各种氧化物层和用于图案化和金属层中的光致抗蚀剂硬掩模，从而允许形成位线，同时保持SiN层的完整性。