公开(公告)号：WO2017116763A3

公开(公告)日：2017-07-06

申请号：PCT/US2016/067234

申请日：2016-12-16

Applicant: HEADWAY TECHNOLOGIES, INC. ,  IBM CORPORATION

Inventor： JAN, Guenole ,  WANG, Po-Kang ,  DeBROSSE, John ,  LEE, Yuan-Jen

IPC: G11C29/02 ,  G11C11/16 ,  G11C29/44

Abstract: A circuit and method for adaptive trimming of the reference signal for sensing data during a read operation of magnetic memory cells to improve read margin for the magnetic memory cells. The circuit has a trim one-time programmable memory array programmed with offset trim data applied to magnetic memory array sense amplifiers. Sense amplifier trimming circuits receive and decode the trim data to determine offset trim signal magnitude to adjust the reference signal to improve the read margin. The method sets the offset trim level to each increment of the offset trim level. Data is written and read to the magnetic memory array, the number of errors in the array is accumulated for each setting of the offset trim level. The error levels are compared and the appropriate trim level is programmed to the trim memory cells such that a read margin of the sense amplifier is improved.

公开(公告)号：WO2017116763A2

公开(公告)日：2017-07-06

申请号：PCT/US2016/067234

申请日：2016-12-16

Applicant: HEADWAY TECHNOLOGIES, INC. ,  IBM CORPORATION

Inventor： JAN, Guenole ,  WANG, Po-Kang ,  DeBROSSE, John ,  LEE, Yuan-Jen

IPC: G11C29/02 ,  G11C11/16

CPC classification number: G11C11/1673 ,  G11C11/005 ,  G11C11/417 ,  G11C17/02 ,  G11C29/021 ,  G11C29/026 ,  G11C29/028 ,  G11C29/44

Abstract: A circuit and method for adaptive trimming of the reference signal for sensing data during a read operation of magnetic memory cells to improve read margin for the magnetic memory cells. The circuit has a trim one-time programmable memory array programmed with offset trim data applied to magnetic memory array sense amplifiers. Sense amplifier trimming circuits receive and decode the trim data to determine offset trim signal magnitude to adjust the reference signal to improve the read margin. The method sets the offset trim level to each increment of the offset trim level. Data is written and read to the magnetic memory array, the number of errors in the array is accumulated for each setting of the offset trim level. The error levels are compared and the appropriate trim level is programmed to the trim memory cells such that a read margin of the sense amplifier is improved.

Abstract translation: 一种用于在磁存储单元的读取操作期间对参考信号进行自适应修整以用于感测数据的电路和方法，以提高磁存储单元的读取余量。 该电路具有一个微调一次性可编程存储器阵列，该微处理器阵列通过将失调微调数据应用于磁存储器阵列读出放大器而编程。 读出放大器微调电路接收并解码微调数据以确定偏移微调信号幅度以调整参考信号以提高读取裕度。 该方法将偏移修剪水平设置为偏移修剪水平的每个增量。 数据被写入并被读取到磁存储器阵列中，阵列中的错误数量针对偏移微调水平的每个设置而被累积。 比较错误等级，并将适当的修整等级编程到修整存储单元，从而改善读出放大器的读取裕度。