公开(公告)号：WO2017069706A1

公开(公告)日：2017-04-27

申请号：PCT/SG2016/050513

申请日：2016-10-21

Applicant: HEPTAGON MICRO OPTICS PTE. LTD.

Inventor： KÖKLÜ, Gözen ,  BÜTTGEN, Bernhard

IPC: H01L27/14 ,  H04N5/335 ,  G01S7/00 ,  G01C3/00

CPC classification number: G01C3/00 ,  G01S7/4914 ,  H01L27/14 ,  H04N5/37457

Abstract: Pixel devices and arrays of pixel devices are operable to demodulate modulated light incident on a photo-detection region of the pixel devices. The pixel devices can include floating diffusion implant layers and transfer gates. The floating diffusion implant layers and transfer gates are disposed such that photo-generated charge carriers can be conducted to the floating diffusion implant layers over minimal charge-carrier transport paths.

Abstract translation: 像素装置和像素装置阵列可操作以解调入射在像素装置的光检测区域上的经调制光。 像素器件可以包括浮置扩散注入层和传输栅极。 浮动扩散注入层和传输栅极被布置为使得光生电荷载流子可以在最小电荷载流子传输路径上被传导到浮动扩散注入层。

公开(公告)号：WO2017123159A1

公开(公告)日：2017-07-20

申请号：PCT/SG2017/050019

申请日：2017-01-16

Applicant: HEPTAGON MICRO OPTICS PTE. LTD.

Inventor： BUETTGEN, Bernhard ,  KÖKLÜ, Gözen ,  LOELIGER, Theodor Walter

IPC: H01L31/0352 ,  H01L21/265 ,  H01L21/329 ,  H01L21/33 ,  H01L31/11 ,  H01L31/111

CPC classification number: H01L31/101

Abstract: A semiconductor device operable to demodulate incident modulated electromagnetic radiation, the semiconductor device comprising: a pinned photodiode structure including a substrate of a first type, an implant layer of a second type disposed within the substrate, first and second auxiliary implant layers of the second type disposed within the substrate and each disposed adjacent to the implant layer of the second type, an implant layer of the first type disposed within the implant layer of the second type and extending into the first and second auxiliary implant layers of the second type, an insulator disposed on a surface of the substrate, and a photo-detection region; first and second transfer gates disposed on a surface of the insulator, the transfer gates being operable to generate a field within the substrate; and first and second floating diffusion implant layers of the second type disposed within the substrate.

Abstract translation: 半导体器件，其可操作以解调入射调制的电磁辐射，所述半导体器件包括：钉扎光电二极管结构，其包括第一类型的衬底，布置在所述衬底内的第二类型的注入层，第一和第二类型的注入层， 第二类型的第二辅助注入层设置在衬底内并且每个设置为与第二类型的注入层相邻;第一类型的注入层，设置在第二类型的注入层内并延伸到第一和第二辅助注入中 第二类型的层，设置在基板表面上的绝缘体，以及光检测区域; 设置在所述绝缘体的表面上的第一传输门和第二传输门，所述传输门可操作以在所述衬底内产生场; 以及设置在衬底内的第二类型的第一和第二浮动扩散注入层。

公开(公告)号：WO2017058109A1

公开(公告)日：2017-04-06

申请号：PCT/SG2016/050473

申请日：2016-09-26

Applicant: HEPTAGON MICRO OPTICS PTE. LTD.

Inventor： BUETTGEN, Bernhard ,  KÖKLÜ, Gözen ,  FURRER, Daniel ,  BEER, Stephan ,  PAÑOS, Miguel Bruno

IPC: H01L23/00 ,  H01L25/00 ,  H01L27/00 ,  H01L31/00 ,  G03B15/02 ,  G01J1/00 ,  G01B11/00 ,  G01C3/00

CPC classification number: G01B11/00 ,  G01C3/08 ,  G01J3/0213 ,  G01J3/0216 ,  G01J3/2823 ,  G01J3/36 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14825

Abstract: An optoelectronic module operable to acquire distance data and spectral data includes an array of demodulation pixels and an array of spectral filters. The demodulation pixels can possess an intrinsic wavelength-dependent sensitivity, wherein the intrinsic wavelength-dependent sensitivity can be offset by an intensity balancing micro-lens array in some cases. In some cases, the intrinsic wavelength-dependent sensitivity can be offset by a combined filter array, while in other cases the intrinsic wavelength-dependent sensitivity can be offset by an intensity balancing filter array. Still in other cases, the demodulation pixels can be operable in such as to offset the intrinsic wavelength-dependent sensitivity.

Abstract translation: 可操作以获取距离数据和光谱数据的光电模块包括解调像素阵列和光谱滤波器阵列。 解调像素可以具有固有的依赖于波长的灵敏度，其中在某些情况下，固有的依赖于波长的灵敏度可以通过强度平衡微透镜阵列来抵消。 在某些情况下，固有的波长相关灵敏度可以由组合滤波器阵列抵消，而在其他情况下，固有波长相关灵敏度可以被强度平衡滤波器阵列抵消。 仍然在其他情况下，解调像素可以在诸如偏移本征波长依赖灵敏度之间操作。