公开(公告)号：WO2019133558A1

公开(公告)日：2019-07-04

申请号：PCT/US2018/067417

申请日：2018-12-22

Applicant: HERAEUS GMSI LLC

Inventor： GUERCIO, Peter, J. ,  WESTPHAL, Paul

IPC: C04B41/45 ,  C04B41/53 ,  C01B32/215 ,  C23C16/02 ,  C23C16/32 ,  C04B41/87 ,  C04B41/91 ,  C04B41/00 ,  C04B41/50 ,  C01B32/956

CPC classification number: C01B32/215 ,  C01B32/956 ,  C04B41/009 ,  C04B41/4519 ,  C04B41/5059 ,  C04B41/5346 ,  C04B41/80 ,  C04B41/87 ,  C04B41/91 ,  C23C16/0227 ,  C23C16/0236 ,  C23C16/045 ,  C23C16/325 ,  C04B35/522 ,  C04B38/00 ,  C04B41/4531 ,  C04B41/0072

Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

公开(公告)号：WO2019133560A1

公开(公告)日：2019-07-04

申请号：PCT/US2018/067421

申请日：2018-12-22

Applicant: HERAEUS GMSI LLC

Inventor： GUERCIO, Peter J. ,  WESTPHAL, Paul

IPC: C04B41/50 ,  C04B41/49 ,  C04B41/87 ,  C04B41/00 ,  C23C16/32 ,  C04B111/00

CPC classification number: C04B41/87 ,  C04B41/009 ,  C04B41/5059 ,  C04B2111/00405 ,  C23C16/0218 ,  C23C16/045 ,  C23C16/325 ,  C23C16/45523 ,  C04B35/522 ,  C04B38/00 ,  C04B41/4531 ,  C04B41/526

Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

公开(公告)号：WO2019133561A1

公开(公告)日：2019-07-04

申请号：PCT/US2018/067422

申请日：2018-12-22

Applicant: HERAEUS GMSI LLC

Inventor： GUERCIO, Peter J. ,  WESTPHAL, Paul

IPC: C23C16/32 ,  C04B41/45 ,  C04B35/52 ,  C04B41/87 ,  C04B41/00 ,  C04B41/50

CPC classification number: C23C16/325 ,  C04B35/522 ,  C04B38/00 ,  C04B41/009 ,  C04B41/45 ,  C04B41/5059 ,  C04B41/87 ,  C04B2111/00431 ,  C04B2235/72 ,  C04B2235/724 ,  C04B2235/77 ,  C04B41/4531 ,  C04B38/0096

Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

公开(公告)号：WO2019133556A1

公开(公告)日：2019-07-04

申请号：PCT/US2018/067414

申请日：2018-12-22

Applicant: HERAEUS GMSI LLC

Inventor： GUERCIO, Peter, J. ,  WESTPHAL, Paul

IPC: C04B41/87 ,  C04B41/00 ,  C04B41/49 ,  C23C16/32 ,  C04B41/50 ,  C23C16/02 ,  C23C16/04

CPC classification number: C23C16/4581 ,  C04B41/009 ,  C04B41/5059 ,  C04B41/87 ,  C23C16/0218 ,  C23C16/045 ,  C23C16/325 ,  C04B35/522 ,  C04B38/00 ,  C04B41/4531

Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

公开(公告)号：WO2019133559A1

公开(公告)日：2019-07-04

申请号：PCT/US2018/067418

申请日：2018-12-22

Applicant: HERAEUS GMSI LLC

Inventor： GUERCIO, Peter, J. ,  WESTPHAL, Paul

IPC: C04B41/87 ,  C04B35/52 ,  C04B41/00 ,  C04B41/50 ,  C23C16/02 ,  C23C16/32

CPC classification number: C23C16/0209 ,  C04B35/522 ,  C04B41/009 ,  C04B41/5059 ,  C04B41/87 ,  C04B2235/6584 ,  C04B2235/663 ,  C04B2235/72 ,  C04B2235/724 ,  C04B2235/77 ,  C23C16/325 ,  C04B38/00 ,  C04B41/4531

Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

公开(公告)号：WO2019133557A1

公开(公告)日：2019-07-04

申请号：PCT/US2018/067415

申请日：2018-12-22

Applicant: HERAEUS GMSI LLC

Inventor： GUERCIO, Peter J. ,  WESTPHAL, Paul

IPC: C04B41/87 ,  C04B41/00 ,  C23C16/32 ,  C04B41/50 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455

CPC classification number: C04B41/009 ,  C04B41/5059 ,  C04B41/87 ,  C23C16/0218 ,  C23C16/045 ,  C23C16/325 ,  C23C16/45523 ,  C04B35/522 ,  C04B38/00 ,  C04B41/4531

Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.