-
公开(公告)号:WO2006044072A1
公开(公告)日:2006-04-27
申请号:PCT/US2005/032917
申请日:2005-09-13
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Xiaofeng , ALLEY, Rodney L. , TRUEBA, Kenneth E.
Inventor: YANG, Xiaofeng , ALLEY, Rodney L. , TRUEBA, Kenneth E.
IPC: A61M15/00
CPC classification number: A61M15/0065 , A61M15/025
Abstract: A silicon die (100) having an orifice layer (102) with plural openings (104) formed therein defines a drop ejection device (100) for use in a handheld inhaler (10). An underlying control layer (105) defines fluid chambers (114), each carrying a heat transducer (106). A control system (24) energizes selected heat transducers (106) to heat fluid in the chambers (114), vaporizing the fluid, which is ejected through the orifices (104) in small droplets.
Abstract translation: 具有形成有多个开口(104)的孔口层(102)的硅模具(100)限定了用于手持式吸入器(10)中的液滴喷射装置(100)。 底层控制层(105)限定流体室(114),每个流体室承载热变换器(106)。 控制系统(24)激励所选择的热传感器(106)以加热腔室(114)中的流体,使流体以小液滴喷射通过孔口(104)。
-
公开(公告)号:WO2013002767A1
公开(公告)日:2013-01-03
申请号:PCT/US2011/042175
申请日:2011-06-28
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , MILLIGAN, Donald, J. , ALLEY, Rodney L. , HARTWELL, Peter, G. , WALMSLEY, Robert, G.
Inventor: MILLIGAN, Donald, J. , ALLEY, Rodney L. , HARTWELL, Peter, G. , WALMSLEY, Robert, G.
CPC classification number: H02N1/00 , B81B3/0051 , B81B3/0054 , B81B2201/0235 , B81B2203/053 , B81C1/00388 , G01P2015/0871 , H01H3/60 , H01L29/84
Abstract: The present disclosure includes structures and methods of forming structures for restricting out-of-plane travel. One example of forming such structures includes providing a first wafer (100, 220) comprising a bond layer of a particular thickness (101, 221) on a surface of a substrate material (105, 225), removing the bond layer (101, 221) in a first area (103-1, 103-2, 223) to expose the surface of the substrate material (105, 225), applying a mask to at least a portion of a remaining bond layer (109-1, 109-4, 229-1, 229-3) and a portion of the exposed surface of the substrate material in the first area (109-2, 109-3, 229-2) to form a second area exposed on the surface of the substrate material (105, 225), etching the second area to form a cavity (110, 230) in the substrate material (105, 225) and the bond layer (101, 221), and forming by the etching, in the cavity (110, 230), a structure (113-1, 113-2, 233 for restricting out-of-plane travel, where the structure (113-1, 113-2, 233) has a particular height from a bottom of the cavity (115, 235) determined by the particular thickness of the bond layer (101, 221).
Abstract translation: 本公开包括形成用于限制飞机外行进的结构的结构和方法。 形成这种结构的一个实例包括在衬底材料(105,225)的表面上提供包括特定厚度(101,221)的接合层的第一晶片(100,220),去除接合层(101,221) )在第一区域(103-1,103-2,223)中以暴露所述衬底材料(105,225)的表面,将掩模施加到剩余接合层(109-1,109-和223)的至少一部分上, 4,229-1,229-3)和第一区域(109-2,103-3,229-2)中的基板材料的暴露表面的一部分,以形成暴露在基板表面上的第二区域 蚀刻所述第二区域以在所述基底材料(105,225)和所述接合层(101,221)中形成空腔(110,230),并且通过所述蚀刻在所述空腔(110)中形成 ,230),用于限制平面外行进的结构(113-1,113-2,233),其中结构(113-1,113-2,233)具有距腔的底部的特定高度( 115,235)由粘合剂l的特定厚度确定 ayer(101,221)。
-
3.
公开(公告)号:WO2016068958A1
公开(公告)日:2016-05-06
申请号:PCT/US2014/063235
申请日:2014-10-30
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor: COVENTRY, Laurie A. , ALLEY, Rodney L. , THOMAS, David R.
CPC classification number: B41J2/1601 , B41J2/14024 , B41J2/14129 , B41J2/1623 , B41J2/1753 , B41J2/17546 , B41J2202/20 , B41J2202/22
Abstract: Printing apparatus and methods of producing such a device are disclosed. An example printhead die includes a first resistor (404) to cause fluid to be ejected out of a first nozzle (142; 205; 305) and a second resistor (405) to cause fluid to be ejected out of a second nozzle (142, 205, 305). The example printhead die also includes a first cavitation plate (408) to cover the first resistor (404) and a second cavitation plate (412) to cover the second resistor (405), the first cavitation plate (408) spaced from the second cavitation plate (412).
Abstract translation: 公开了制造这种装置的印刷装置和方法。 示例性的打印头芯片包括使流体从第一喷嘴(142; 205; 305)中排出的第一电阻器(404)和第二电阻器(405),以使流体从第二喷嘴(142, 205,305)。 示例性打印头芯片还包括覆盖第一电阻器(404)的第一空化板(408)和覆盖第二电阻器(405)的第二空化板(412),第一空化板(408)与第二空化 板(412)。
-
公开(公告)号:WO2014120206A1
公开(公告)日:2014-08-07
申请号:PCT/US2013/024152
申请日:2013-01-31
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor: WU, Jennifer , ALLEY, Rodney L. , WALMSLEY, Robert G. , MILLIGAN, Donald J.
CPC classification number: G01P15/125 , B81B7/0029 , B81B2201/0221 , B81B2201/0235 , G01C19/5769 , G01P1/023 , G01P15/0802 , Y10T29/417
Abstract: A sensor having a particle barrier is described. In an example, a sensor includes: first and second electrode sets respectively disposed upon a planar support surface and a proof mass that is compliantly displaceable along a first axis substantially parallel to the planar support surface; and a first barrier disposed on the planar support around the first electrode set having a height less than a gap between the planar support and the proof mass to mitigate particle migration into the first or second electrode set.
Abstract translation: 描述具有颗粒屏障的传感器。 在一个示例中,传感器包括:分别设置在平面支撑表面上的第一和第二电极组以及沿着基本上平行于平面支撑表面的第一轴线顺从地移动的检测质量块; 以及围绕所述第一电极组设置在所述平面支撑件上的第一屏障,所述第一电极具有小于所述平面支撑件和所述检测质量块之间的间隙的高度,以减轻进入所述第一或第二电极组的颗粒迁移。
-
公开(公告)号:WO2012154165A1
公开(公告)日:2012-11-15
申请号:PCT/US2011/035697
申请日:2011-05-09
Inventor: ALLEY, Rodney L. , MILLIGAN, Donald J.
IPC: H01L27/00 , H01L27/146 , H01L27/20 , H01L21/50
CPC classification number: B81B7/0077 , B81B2207/092 , B81C1/00269 , H01L21/2007 , H01L21/50
Abstract: The present disclosure includes bonded wafer structures and methods of forming bonded wafer structures. One example of a forming a bonded wafer structure includes providing a first wafer (202, 302) and a second wafer (204, 304) to be bonded together via a bonding process that has a predetermined wafer gap (216, 316) associated therewith, and forming a mesa (215, 315, 415) on the first wafer (202, 302) prior to bonding the first wafer (202, 302) and the second wafer (204, 304) together, wherein a height (220, 320, 420) of the mesa (215, 315, 415) is determined based on a target element gap (217, 317) associated with the bonded wafer structure.
Abstract translation: 本公开包括键合晶片结构和形成键合晶片结构的方法。 形成键合晶片结构的一个实例包括提供通过具有与其相关联的预定晶片间隙(216,316)的接合工艺来结合在一起的第一晶片(202,302)和第二晶片(204,304) 以及在将所述第一晶片(202,302)和所述第二晶片(204,304)接合在一起之前在所述第一晶片(202,302)上形成台面(215,315,415),其中, 基于与键合晶片结构相关联的目标元件间隙(217,317)来确定台面(215,315,415)的尺寸(420)420。
-
-
-
-