公开(公告)号：WO2013171235A1

公开(公告)日：2013-11-21

申请号：PCT/EP2013/059971

申请日：2013-05-14

Applicant: IMEC

Inventor： CARBONELL, Laure Elisa ,  PETER, Antony Premkumar ,  SCHAEKERS, Marc ,  VAN ELSHOCHT, Sven ,  TOKEI, Zsolt

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53209 ,  H01L21/28518 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76889 ,  H01L23/528 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53261 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Method for forming an interconnect structure, comprising the steps of: forming a recessed structure in a dielectric material on a substrate; at least partially filling said recessed structure with a metal chosen from the group consisting of copper, nickel and cobalt; introducing the substrate in a CVD reactor; bringing the substrate in the CVD reactor to a soak temperature and subsequently performing a soak treatment by supplying a germanium precursor gas to the CVD reactor at the soak temperature, thereby substantially completely converting the metal in the recessed structure to a germanide.

Abstract translation: 用于形成互连结构的方法，包括以下步骤：在基底上的电介质材料中形成凹陷结构; 用选自铜，镍和钴的金属至少部分地填充所述凹陷结构; 将衬底引入CVD反应器中; 使衬底在CVD反应器中达到浸泡温度，随后通过在浸泡温度下将锗前体气体供应至CVD反应器，从而基本上将凹陷结构中的金属完全转化为锗化物，进行浸泡处理。